2E7 POWER DIODE Search Results
2E7 POWER DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
2E7 POWER DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Mosfet FDP8870
Abstract: 19E-9 FDP8870
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FDP8870 O-220AB FDP8870 Mosfet FDP8870 19E-9 | |
19E-9Contextual Info: FDP8870 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low |
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FDP8870 O-220AB 19E-9 | |
FDP8874
Abstract: 37e-1
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FDP8874 O-220AB FDP8874 37e-1 | |
FDP8874
Abstract: 38e6
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FDP8874 O-220AB FDP8874 38e6 | |
19E-9
Abstract: FDP8870
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FDP8870 O-220AB 19E-9 FDP8870 | |
TC11E
Abstract: 19E-9 FDP8870 RS21E
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FDP8870 O-220AB TC11E 19E-9 RS21E | |
Contextual Info: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low |
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FDP8870 | |
Contextual Info: FDP8870 e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM |
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FDP8870 FDP8870 | |
Contextual Info: FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low |
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FDP8874 O-220AB | |
KP350
Abstract: FDP8896
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FDP8896 O-220AB KP350 FDP8896 | |
tc124eContextual Info: FDP8896_F085 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low |
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FDP8896 tc124e | |
Contextual Info: FDP8874 N May 2008 FDP8874 tmM N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM |
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FDP8874 FDP8874 | |
TC124E
Abstract: 2e7 power diode KP350 46E-1 FDP8896 26e3 nl101 46e1
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FDP8896 O-220AB FDP8896 TC124E 2e7 power diode KP350 46E-1 26e3 nl101 46e1 | |
Contextual Info: FDP8896 N May 2008 FDP8896 tmM N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM |
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FDP8896 FDP8896 | |
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Contextual Info: FDP8896 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low |
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FDP8896 O-220AB | |
Contextual Info: FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low |
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FDP8874 O-220AB | |
FDU8880Contextual Info: FDU8880 May 2008 FDU8880 tm N-Channel PowerTrench MOSFET 30V, 58A, 10mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM |
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FDU8880 O-251AA) FDU8880 | |
Contextual Info: April 2008 FDD8876 / FDU8876 tm N-Channel PowerTrench MOSFET 30V, 73A, 8.2mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM |
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FDD8876 FDU8876 O-252 O-252) O-251AA) FDU8876 | |
Contextual Info: FDD8896 / FDU8896 tm N-Channel PowerTrench MOSFET 30V, 94A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM |
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FDD8896 FDU8896 O-252 O-252) O-251AA) FDU8896 | |
fdd8880Contextual Info: FDD8880 N April 2008 FDD8880 tm N-Channel PowerTrench MOSFET 30V, 58A, 9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM |
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FDD8880 O-252 O-252) FDD8880 | |
Contextual Info: FDB8870 May 2008 FDB8870 tm N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM |
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FDB8870 O-263AB FDD8870 | |
Contextual Info: FDB8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low |
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FDB8870 O-263AB | |
TC124EContextual Info: FDB8874 N-Channel PowerTrench MOSFET 30V, 121A, 4.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low |
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FDB8874 O-263AB TC124E | |
Contextual Info: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM |
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FDD8874 FDU8874 O-251AA) O-252 O-252) |