JMSL0612AG
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN5x6-8L package with 9.5 mΩ typical RDS(ON) at VGS = 10V, 34 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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JMSL0302AGND
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Jiangsu JieJie Microelectronics Co Ltd
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30V dual asymmetric N-channel power MOSFET in DFN5060-8L-C package with 3.7 mΩ and 1.7 mΩ typical RDS(ON) at 4.5V VGS, designed for DC/DC conversion and power management applications. |
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JMSH0602AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN5x6-8L package with 1.9 mΩ typical RDS(ON) at 10 V VGS, 168 A continuous drain current, and low gate charge, suitable for high-efficiency power applications. |
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JMSH0602AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V 1.9mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 175A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for power management and motor driving applications. |
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1SMA4732AG
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Shikues Semiconductor
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Max. 1 W, 3.3V to 330V, SMA, 0.055g, solderable per MIL-STD-750. |
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NCEA6042AG
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NCEPOWER
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NCEA6042AG is an automotive-grade N-channel enhancement mode power MOSFET with 60V drain-source voltage, 42A continuous drain current, and low on-resistance of 14mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications. |
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S2AG
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Shikues Semiconductor
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Surface Mount, 50-1000V, 2A, SMA case, RoHS compliant, 0.055g. |
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ES2AG
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Shikues Semiconductor
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Surface Mount, 50-600V, 2A, SMA, RoHS compliant, superfast recovery, glass passivated. |
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JMSL0602AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-Ch Power MOSFET in PDFN5x6-8L package with 1.8 mΩ typical RDS(ON) at 10V VGS, 154A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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1SMA4742AG
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Shikues Semiconductor
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Max. 1W, 3.3V-330V, SMA case, 0.055g, solderable terminals. |
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1SMA4752AG
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Shikues Semiconductor
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Total power dissipation: Max. 1 W. Zener reverse voltage range 3.3V to 330V. Small plastic package for surface mounted design. |
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MMBT2222A-G
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JCET Group
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MMBT2222A NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. |
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NCE6042AG
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NCEPOWER
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NCE6042AG is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 42A continuous drain current, and low RDS(ON) of 14mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in power switching applications. |
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JMSL0612AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN5x6-8L package with 9.5 mΩ RDS(ON) at 10 V VGS, 52 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSL0602AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET with 1.8 mΩ typical RDS(ON) at VGS = 10V, 2.4 mΩ at VGS = 4.5V, 172A continuous drain current, and 48 nC total gate charge, housed in a PDFN5x6-8L package. |
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JMSL0612AG
