2A 80V COMPLEMENTARY TRANSISTOR Search Results

2SCR574D

Contextual Info: 2SAR574D Datasheet PNP -2.0A -80V Middle Power Transistor l Outline Parameter VCEO Value IC -2A CPT -80V 2SAR574D l Features 1 Suitable for Middle Power Driver. 2) Complementary NPN Types : 2SCR574D.

2SCR574D

Contextual Info: 2SCR574D Datasheet NPN 2.0A 80V Middle Power Transistor l Outline Parameter VCEO Value IC 2A CPT 80V 2SCR574D l Features 1 Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR574D.

2SCR574D

Contextual Info: 2SCR574D A07 Datasheet NPN 2.0A 80V Middle Power Transistor l Outline Parameter VCEO Value IC 2A CPT 80V 2SCR574D A07 l Features 1 Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR574D.

Contextual Info: TSD2150A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● 0.5V @ IC / IB = 2A / 200mA Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A

nte275

Abstract: SILICON COMPLEMENTARY transistors darlington
Contextual Info: NTE274 NPN & NTE275 (PNP) Silicon Complementary Transistors Darlington Power Amplifier, Switch Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver

PNP Monolithic Transistor Pair

Abstract: NTE253MCP DSA0013913 SILICON COMPLEMENTARY transistors darlington
Contextual Info: NTE253 NPN & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.

PNP 2A DPAK

Abstract: MJD112 MJD117 MJD117 Darlington On semiconductor date Code dpak npn 2A DPAK NPN VCBO 80V
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching Applications

ic 10w power amplifier

Abstract: npn general purpose high voltage amplifier NTE189 NTE188
Contextual Info: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching Applications

Contextual Info: TIP31,2 CRO SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. TPifdSISIDR Nil. MMtlrCri! ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

NTE188

Abstract: NTE189
Contextual Info: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.

NTE188

Abstract: NTE189
Contextual Info: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.

NTE197

Abstract: NTE196
Contextual Info: NTE196 NPN & NTE197 (PNP) Silicon Complementary Transistors Audio Power Output and Medium Power Switching Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors MJD117 TRANSISTOR PNP TO – 251 FEATURES z High DC Current Gain z Low Collector-Emitter Saturation Voltage z Complementary to MJD112 1. BASE 2. COLLECTOR 3. EMITTER

NPN Transistor VCEO 80V 100V

Abstract: NTE24 NTE25
Contextual Info: NTE24 NPN & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A.

FZT951

Abstract: FZT953 fzt853 FZT851 DSA003718
Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

NTE2305

Contextual Info: NTE2305 NPN & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

FMMT634

Abstract: IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701
Contextual Info: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734

BD810

Contextual Info: Power Transistors www.jmnic.com BD810 Silicon PNP Transistors Features BCE ﹒Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ﹒With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING

2A 80v complementary transistor

Contextual Info: SEMICONDUCTOR KTA1725 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Complementary to KTC4511. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage

BD809

Abstract: BD810
Contextual Info: SavantIC Semiconductor Product Specification BD809 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD810 ·DC current gain : hFE = 30 Min @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or

BD810

Abstract: BD809
Contextual Info: SavantIC Semiconductor Product Specification BD810 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD809 ·DC current gain : hFE = 30 Min @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or

T1P110

Abstract: T1P112 00104 TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: PANASONIC INDL/ELEK -CIO [□*132052 DDIOMBI a 12E D Darlington Silicon NPN Power Transistors TO-220 Package T-33 Absolute Maximum Ratings Ta=25°C Kern Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current

NPN VCBO 80V

Contextual Info: SEMICONDUCTOR KTC4511 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A C P S K G B E L L MAXIMUM RATING Ta=25℃ R J M SYMBOL RATING UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage