2SK381 Search Results

Contextual Info: IC SMD Type Product specification 2SK3814 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15

2SK381

Abstract: X441
Contextual Info: B i s s a i / * ? 2SK381 »SO S 2SK M 1Ü. iS * f - c . m w u * « / !.* * . » n T * « ¿ - f. t - Y i * . m a mm ) . t í W » « i L Í Í W N ^ - f + / v « Í K Ü « * Í j ) * ►•> > T + o r n 7 - f- m i L - c a j t w ¿ < í : I v f e l t t t l . B o * .w ,« n e 'a in - !:* # '> .

80531

Abstract: 2SK3815 K3815
Contextual Info: 2SK3815 Ordering number : ENN8053 2SK3815 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

K3816

Abstract: 2SK3816
Contextual Info: 2SK3816 Ordering number : ENN8054 2SK3816 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

transistor NEC D 587

Abstract: 2SK3811 2SK3811-ZP MP-25ZP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3811 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3811-ZP TO-263 MP-25ZP

EN805

Abstract: K3815 2SK3815 80531
Contextual Info: 2SK3815 Ordering number : EN8053A SANYO Semiconductors DATA SHEET 2SK3815 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.

80547

Contextual Info: Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET http://onsemi.com 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L Features • • • ON-resistance RDS on 1=20mΩ(typ.) Input capacitance Ciss=1780pF(typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C

2SK30ATMY

Abstract: 2SK30ATM Y PN4338 2SK68A-K MPF3822 2SK160A 2SK117Y 2SK514E 2SK30ATM-Y 2SK433
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer g,. V BR GSS VGS(off) Max ( IGSS Max A) Cln Ma~ Toper Max °C) (F) Package Style N-Chann I JFETs, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 2N3068A 2N3068A 2N3068A 2SK381 2SK433 KE3687

smd transistor ISS

Abstract: 60V 60A TO-252 smd transistor 26 2SK3814
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3814 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28

K3816

Contextual Info: 2SK3816 Ordering number : ENN8054 2SK3816 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

MP-25ZP

Abstract: 2SK3812 2SK3812-ZP
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3812 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE

2SK3813

Abstract: 2SK3813-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3813 TO-251 MP-3

Contextual Info: 2SK3818 2SK3818 Ordering number : ENN8056 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

Contextual Info: Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET http://onsemi.com 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L Features • • • ON-resistance RDS on 1=20mΩ(typ.) Input capacitance Ciss=1780pF(typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C

74a diode

Abstract: k3818 2SK3818
Contextual Info: 2SK3818 Ordering number : ENN8056 2SK3818 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2SK3813-Z

Abstract: 2SK38 2SK3813 d1673
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3813 TO-251 MP-3

K3817

Abstract: 80554
Contextual Info: 2SK3817 Ordering number : ENN8055 2SK3817 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

k3819

Abstract: 2SK3819 K381
Contextual Info: 2SK3819 Ordering number : ENN8057 2SK3819 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.

smd transistor ISS

Abstract: 40V 60A MOSFET 2SK3813 SMD MU
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3813 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28

transistor NEC D 587

Abstract: 2sk3812 2SK3812-ZP MP-25ZP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3812 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3812-ZP TO-263 MP-25ZP

2SK381

Abstract: 2SJ40 2SK381 c
Contextual Info: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SK381 FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SK381 is a small type resin sealed N channel junction type FET. It 4 .3 M A X is especially designed fo r low frequency voltage amplify,analog switch

2SK3814

Abstract: 2SK3814-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3814 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3814 TO-251 MP-3

Contextual Info: IC SMD Type Product specification 2SK3813 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15

K3819

Abstract: 2SK3819 D1306
Contextual Info: 2SK3819 注文コード No. N 8 0 5 7 三洋半導体データシート N 2SK3819 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・4V 駆動。 ・超高速スイッチング。