2SK315 Search Results

2SK315

Abstract: DDD3710 SILICON TRANSISTOR FS 2025 2030a la 1201 sanyo
Contextual Info: S ANYO SEMICONDUCTOR 2SK315 CORP 15E D I 7TT?Q7b 1 00053^7 T- 3J~2 ^ I N -C h a n n e l Ju n c tio n Silico n F ie ld -E ffe ct Transistor 2040 FM Tuner Applications 1005B Features Ideal for FM tuners in radios, stereos, etc. . Because it is compactly packaged, sets can be made compact.

Hitachi DSA002749

Contextual Info: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching ADE-208-682A Z 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 100 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220AB

Hitachi DSA00276

Contextual Info: 2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 Z 1st. Edition Feb. 1999 Features • Low on-resistance R DS =100mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2

Hitachi DSA002749

Contextual Info: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 D 4 1

Hitachi DSA0076

Abstract: 2SK3153
Contextual Info: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching ADE-208-733A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS =65mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2

2SK3150

Abstract: Hitachi DSA00347
Contextual Info: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline

2SK315

Contextual Info: Ordering number:EN1005B N-Channel Junction Silicon FET 2SK315 FM Tuner Applications Package Dimensions • Ideal for FM tuners in radios, stereos, etc. · Because it is compactly packaged, sets can be made compact. · Small Crss Crss=0.08pF typ . · High yfs (yfs=12.0ms typ).

2SK3150

Abstract: Hitachi DSA0076
Contextual Info: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750B (Z) 3rd. Edition Mar. 2001 Features • Low on-resistance R DS =45mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK

Contextual Info: 2SK3151 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • L ow on-resistance • on = 11.5 m il typ. H igh speed sw itching • 4 V gate drive device can be driven from 5 V source r ds Outline TO-3P Absolute Maximum Ratings (Ta = 25 °C)

Contextual Info: 2SK3159 Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • • • Low on-resistance R ds = 23 m ii typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P 1. Gate 2. Drain Flange 3. Source ADE-208-774 (Z)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK315

Contextual Info: Ordering number : EN1005B _ 2 S K 5 1 5 -Channel Junction Silicon Field-Effect Transistor FM T u n e r A p p l i c a t i o n s Features * Ideal for FM tuners in radios, stereos, etc. . Because it is compactly packaged, sets can be made compact,

2SK968

Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Contextual Info: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller

2SK3150

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid