2SK1861 Search Results

2SK1395

Abstract: 2sk2006 2SK1539 2SK1685
Contextual Info: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695

Contextual Info: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10

Contextual Info: S M D l S f i v '; - * * /\°7~M 0S F E T Surface Mownting Technology Device o u t l in e d im e n s io n s 2SK1861 Case E-pack [F4E15LJ 150V 4 A [Unit ! mm] 6.6 ± 0.2 52 ±02 •4VgE»3tJffi„ • y - l 'f f iB Z D r t S o ÄS T G ate (D (4) Drain (3) Source

smd diode UM 2a

Abstract: 2SK1861 mr02 12-24VA
Contextual Info: S M D M v 'J-X /\°7 ~ M 0 S F E T Surface Mounting Technology Device M flN -ä E I 2SK1861 [ F 1 e E 4 5 1 L 5 V OUTLINE DIMENSIONS Case : E-pack [Unit ! mm] ] A 4 6.6 ±02 aap £ « g ^ !ft] • 4 V . ! l ! il ii) S o EIAJ 2.55 o.r> to. i h No a -y l-ie -^ iîiJ )

2SK1861

Contextual Info: SM D SIfiv'J-X M7 -M 0 SFET SURFACE MOUNTING TECHNOLOGY DEVICE • \Ü£ 1 O U T L I N E D IM E N S IO N S Case : E-pack 2SK1861 (F 4 E 15L 6 .6 + 0 2 2.55 +0-2 150V 4 a 0.5 *Q-i 0 . 6 ± 02 0.5 1.1 - 0-2 [Unit : mm] U - V 5 "( i t L ea d type is available.

KP4N12

Contextual Info: S u r fa c e - M o u n t D e v i c e s Power M O S F E T N-Channel, Enhancement type Parts No. EIAJ No. ☆ ☆ ☆ ☆ ☆ ☆ ☆ ☆ 2SK1861 1931 1194 1195 1672 1533 2062 2063 2064 2065 2005 2006 Electrical Characteristics Absolute Maximum Ratings R s d on

2SK1861

Abstract: power mosfet
Contextual Info: SHINDENGEN VR Series Power MOSFET 2SK1861 F04E15L N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 150V 4A RATINGS Absolute Maximum Ratings (Tc = 25Ž) Item Symbol Tstg Storage Temperature Channel Temperature Tch VDSS Drain-Source Voltage

FTO-220

Abstract: STO-220 Shindengen
Contextual Info: Power M O SFET E-pack series SMD N-Channel, Enhancement type Part No. EIAJ No. ton toff Tch V d ss V g ss Id Pt (max) (typ) (typ) [°C] [V] [V] [A] [W] [fi] [ns] [ns] 57 55 30 37 121 75 2SK1861 1931 1194 1195 1672 Electrical Characteristics Absolute Maximum Ratings

Contextual Info: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40

4311 mosfet transistor

Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Contextual Info: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.

e-pack

Abstract: 2SK1861 2SK1195 F05B23VR
Contextual Info: Bipolar transistors Absolute Maximum Ratings Type No. lliliM S lii» I ä ä S ä 1876 È èÊ ë ÊÊÈîM iÎ ilïlilÈ V cbo VCEO V ebo Ic Ib Pt Tstg Ti sus (min) [V ] [V ] [V ] [A ] [A ] [W ] C-c] [°G ] [V ] -6 0 iÎ ï — 5 -4 0 L -8 0 60 7 40 7 100

2SC460

Contextual Info: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E IA J Absolute Maximum Ratings Electrical C haracteristics V cbo VCEO V ebo Ic Ib Pt T stg [V] [V] [V] [A ] [A ] [W] [•c] [•c] Vceo s u s (min) [V] -5 — 7 -1.5 -55 -40 -3 -1 -5 7 -1.5

Contextual Info: Surface-Mount Devices Power Transistors w E-pack Bipolar transistors A bsolute M axim um Ratings Type No. 2SA 1795 1796 1876 1877 VcBO VcEO V ebo Ic [V] [V] [V] [A] -6 0 -4 0 -5 -7 -8 0 -8 0 60 40 2SC 4668 -1 -5 -1 .5 100 80 4979 Tj sus (min) [W] [°C] P C ]

2SK1672

Abstract: 2SK1533 2sk2280 2SK228
Contextual Info: N & P CHANNEL POWER MOSFETS N AND P CHANNEL ENHANCEMENT MODE • UP TO 900V AT 1.0 AMP WITH 2KV DIELECTRIC STRENGTH • LOW INPUT CAPACITANCE, LOW RDS ON AND FAST SWITCHING TIMES N CHANNEL ENHANCEMENT MODE TC = 25˚C The latest comprehensive data to fully