2SD16 Search Results

cross reference ic

Abstract: 2SD1616A
Contextual Info: DC COMPONENTS CO., LTD. 2SD1616A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency power amplifier and medium-speed switching applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter

2SB1101

Abstract: 2SD1601
Contextual Info: JMnic Product Specification 2SB1101 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1601 ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION

2SD1650

Abstract: 2SD1650 Transistors Data
Contextual Info: Product Specification www.jmnic.com 2SD1650 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Built-in damper diode ・High breakdown voltage ・High speed switching APPLICATIONS ・For color TV horizontal output applications PINNING

Contextual Info: O rd e rin g n u m b e r : EN 2 0 4 0 A J 2SB1122/2SD1622 SA\YO PN P/N PN Epitaxial Planar Silicon Transistors i Low-Frequency Power Amp Applications Applications . Voltage regulators relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET process

MARKING dk

Abstract: 2sd1628
Contextual Info: ^ O r d e r in g num ber : EN 1 7 8 1 A 2SD1628 SA\YO NPN Epitaxial Planar Silicon Transistor i High-Current Switching Applications Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drivers. Features . Low saturation voltage.

2SB1118

Abstract: 2sd1618
Contextual Info: ¡ O rd e rin g n u m b e r .E N 1 7 8 4 B 2SB1118/2SD1618 N0.1784B PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage, High-Current Amp, _ Muting Applications Features . Low collector-to-emitter saturation voltage. . Very small size making it easy to provide high-density,

2SD1640

Abstract: hl planar
Contextual Info: Power Transistors 2SD1640 2SD1640 Silicon NP.N Epitaxial Planar Darlington Type Package D im ensions AF O utput A m plifier U n it • m m S0*¡ • Features 5 2+0 2 • Darlington connection • High DC cu rren t gain hn. • High collector cu rren t (Ic)

marking DK

Abstract: 2SD1628
Contextual Info: Ordering number:EN1781A _ 2SD1628 N0.1781A NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drivers. Features . Low saturation voltage.

Contextual Info: 2SD1620 Ordering number : EN1719C SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features • • • • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.

2SD1620

Contextual Info: Ordering num ber:ENÌ719B N0.1719B _ 2SD1620 NPN Epitaxial Planar Silicon Transistor sa u y o i 1.5V, 3V Strobe Applications F e a tu re s •Less power dissipation because of low VcE sat » permitting more flashes of light to be emitted. ■Large current capacity and highly resistant to breakdown.

D1669

Abstract: 2SB1136 2SD16 AOOS
Contextual Info: O rd e rin g n u m b e r: EN2092B 2SB1136/2SD1669 No.2092B PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Swtching Applications A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

2SD1665

Abstract: 2FK transistor T2721 2SB1130AM 2SD1665AM 2FK 638 transistor
Contextual Info: 40E » ROHM CO LTD 7826^ □QQS'IBt. 3 H R H N / T ransistors 2SD1665AM — 2 S D 1 6 6 5 A M — — T -2 7 -Z I Pow er Amp. Epitaxial Planar NPN Silicon Transistor • ^ JfiTf^ H /D innensions Unit : mm • « * . 1 ) i t « E T ' & 3 (B V Ce o = 1 6 0 V ) o

2SD1608

Abstract: 2SB1108
Contextual Info: P o w er T ra n s is to rs 2SD1608 2S D 1608 Package D im ensions Silicon NPN Triple Diffused Planar Darlington Type M edium Speed Power S w itching C om plem entary Pair w ith 2SB1108 • Features • H igh D C c u r re n t gain hFE • H igh s p e e d s w itc h in g

2SD1611

Abstract: 2SD16H package s4t
Contextual Info: Power T ransistors 2SD 1611 2SD1611 Silicon Triple-Diffused Planar Darlington Type P ow e r Am plifier P ackage D im ension s • Fe a tu res • High DC cu rren t gain I if e • High collector-base voltage ( V Cbo ) • “N T ype" package configuration with a cooling fin for direct soldering

D1616A

Abstract: d1616 transistor d1616a utc d1616a UTC d1616
Contextual Info: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150

D1616A

Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN
Contextual Info: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150

Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

utc d1616a

Abstract: D1616A d1616 transistor d1616a TRANSISTOR D1616
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 *Pb-free plating product number: 2SD1616L/2SD1616AL PIN CONFIGURATION PIN NO.

smd npn darlington

Abstract: 2SD1611
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type Darlington 2SD1611 TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25

dg transistor smd

Abstract: 2SD1624 SMD MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1624
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1624 Features Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage

smd marking DA

Abstract: marking da 2SD1618 DA SMD SMD BR 08 DA marking
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SD1618 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

SMD Transistor XK

Abstract: SMD MARKING XL transistor XM smd xl transistor smd marking xk 2SD1614 hFE CLASSIFICATION Marking MARKING SMD xl xl marking
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1614 Features World standard miniature package. High dc current gain. Low VCE sat . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage

2SD1621

Abstract: SMD TRANSISTOR MARKING Dd smd transistor 560
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity,

2SD1620

Abstract: transistor smd br
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1620 Features Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low