2SD146 Search Results

2SD1468

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1468 TRANSISTOR NPN TO-92 FEATURES z Low saturation voltage z Ideal for low voltage, high current dribes z High DC current gain and high current 1. EMITTER 2.COLLECTOR

2SD1469

Abstract: 2SD1920
Contextual Info: Is "7 > V 7, $ / I ransistors 2SD1469/2SD1920 2SD 1469 2 5 D 1 9 2 0 Power Am pEpitaxial Planar NPN Silicon Transistors • ^ f f ^ ^ l l / D i m e n s i o n s U n it: mm • ¥s& 1) ti& VCE (sat)=6m V(at 1mA/0.1mA) 2) Æ « J Œ * » a t K 7 - f T' fa -5 0

Contextual Info: Tflsa'i'n 0GGSÔ7S 40E D ROHM CO LTD h -7 > ì? 7 , % /Transistors =1 IRHM 2SD1468/2SD1468S - 7=2 7 - 0 9 2SD14S3 2SD1468S NPN '>>;□> b T s v W ^ l l ^ i a ^ ^ / M e d i u m Power Amp. Epitaxial Planar NPN Silicon Transistors • 1 Vce t sat)=6mV at 1mA/0.1 mA)

IMX5T108

Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855

Contextual Info: 2SD1466 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)450 V(BR)CBO (V)500 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200

Contextual Info: 2SD1463 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.200

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SD1468S TRANSISTOR NPN TO-92S FEATURES Low saturation voltage, typically Vce(sat)=0.006V z Ideal for voltage, high current drives, z High DC current gain and high current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1468 TRANSISTOR NPN 1. EMITTER FEATURES z Low saturation voltage z Ideal for low voltage, high current dribes z High DC current gain and high current 2.COLLECTOR

Contextual Info: K ~7 > V X $ /T r a n s is to r s 2 S D 1 4 6 9 M / 2 S D 1 865 2SD1469M 2SD1865 X k?£dr V T l y Pls - H & NPN > u H > h Epitaxial Planar NPN Silicon Transistors ^ /Medium Poower Amp. JL —T- -f > *7/Muting • ÿ t-ffi^ Ü li/D im e n s io n s Unit : mm)

Contextual Info: 2SD1463GB Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.200

Contextual Info: S -7 > V 7-. $ /Transistors 2SD1468 2SD1468S 2SD1468/2SD1468S i t N P N '>>;=!> V 7 > V * $ /M ed iu m Power Amp. Epitaxial Planar NPN Silicon Transistors • 4i-M';J'>±[2l// Dimensions U n it: mm s iry jv ;V ^ i-r ti& 1) VCE ( sat )= 6 m V (at 1 mA/0.1 mA)

ignitor circuit 400

Abstract: 2SD1461
Contextual Info: Power Transistors 2SD1461 2SD1461 Silicon N P N Triple-D iffused P lanar Darlington Type Package Dim ensions High Pow er S w itching U n i t ! mm 15.5m ax. • Features • H ig h D C c u r r e n t g a in I i f e 4-7 max. 13.5max. I- ll.O m ax . 2. 1 m a x

2SD1865

Abstract: 2SD1834 2SD1468S
Contextual Info: Transistors 2SD1834 2SD1468S / 2SD1865 94S-340-D64 (94L-767-D65) 311 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SD1468

Contextual Info: 2SD1468 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units

2SD2422

Abstract: BC807-25T116 2SB1043 2sd2422 Datasheet DTA123JSATP 2SD2574 MMST8598T146 2SD1960 2sc5072 2SA1886
Contextual Info: Transistors Maintenance Product List 638 Transistors FMaintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2

2SD1468

Abstract: 2SD1468S
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SD1468S TRANSISTOR NPN TO-92S FEATURES Low saturation voltage z Ideal for voltage, high current drives, z High DC current gain and high current 1. EMITTER z 2. COLLECTOR

2SD14

Abstract: 2SD1461
Contextual Info: Power Transistors 2 S D 1 4 Ó1 2SD1461 Silicon NPN Triple-Diffused Planar Darlington Type High Power Sw itching • Package Dim ensions ■ Features • H igh D C c u r re n t gain Iif e • L arg e e n e rg y h andling capability • S u itab le fo r ig n ito r

Contextual Info: 2SD1469/2SD1920 L ;7 > v 7, $ / I ransistors 2SD1469 2SD1920 NPN '> lJ - ! > h 7 > y ' X ^ + 4 l ^ ^ ] i i ,llif f l/ M e d iu m P ow er Amp. Epitaxial Planar NPN S ilico n Transistors • ^ J f^ ;± @ /D im e n s io n s U n it: mm 1) VCe ( sat )= 6m V (at 1mA/0.1mA) £ &

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SD1468S TRANSISTOR NPN TO-92S FEATURES Low Saturation Voltage z Ideal for Voltage, High Current Drives, z High DC Current Gain and High Current 1. EMITTER z 2. COLLECTOR

Contextual Info: Is ~7 > y 7. $ /Transistors 2SD1469M/2SD1865 2S D 1469M 2S D 1865 NPN y y =]> h7 > y * $ 4 |iS^J1tilillffl/M edium Power Amp. Epitaxial Planar NPN Silicon Transistors • fl-ffM > £ 0 /D im e n s io n s U n it: mm t Vr>J V tV d iT 1) VCE ( sat )= 6m V (at 1 mA/0.1 mA)

2SD1469M

Abstract: 2SD1865 01MA3
Contextual Info: ROHM S "7 > CO LT» HOE D 70 20 ^ D O Q S ôôi y Z. £ /Transistors 4 « r h u 2SD1469M/2SD1865 — ^ ¿ ^ V 7 V ÿ l ^ —m 2 S D 1 4 6 9 M T -2 7 - / r NPN y ' j 3 > h 7 > y 'Z $ •Î’S ^ i e Îif f l /M e d iu m Power Amp. 2 S D 1 3 8 5 Epitaxial Planar NPN Silicon Transistors

2SD1466

Abstract: 2SD1203 PC100-W
Contextual Info: 2SD1466 I 3 > NPN =M tíW lM V SILICO N NPN EPITA XIAL HIGH VOLTAGE HIGH PO W ER SWITCHING Umax. °fr< 1. — — Wv~•” Wv* X •B a s e l.ök.Q •ryn 2. X ; ■/ ? i E m itte r 3. ^ w ou _ ■I V p O V 9 9 X o lle c t o r D im ensions in mm) (TO-3P)

2SD1469

Abstract: 2SD1920 skm3
Contextual Info: ROHM CO LTD MOE D 7 02Ô W Q00Sfl7fl 4 •RHM h 7 > V X £ //Transistors 2SD1469/2SD1920 - 2SD1469 2SD1920 7 T 2 7 - / £ ~ X t: $ dr T JU 7 ° ls-j~ M NPN > V a > h 7 > v ^ $ 4, ^ ialIiffl/Medium Power Amp. Epitaxial Planar NPN Silicon Transistors

2SD1464

Abstract: 2SB1046 l0ua 2sB104
Contextual Info: 2SD1464 NPN SILICO N NPN EPITAXIAL 2 S B 1 0 4 6 LOW FREQUENCY PO W ER AM PLIFIER Complementary pair with 2SB1046 ÿ 'C / ' jt> 9 1. •Base 2. 3 u 9 9 '•Collector 3. 3- \ 9 •Emitter 4. 3 U 9 9 ‘ Collector i Dimensions in mm (UPAK) ■ A BSO LU T E MAXIMUM RATINGS