2SD0875 Search Results

2SD0875G

Abstract: 2SB0767G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification Complementary to 2SB0767G • Features ue pl d in an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0875G • Features ■ Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767G • Features ■ Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistors 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0875 (2SD875) Unit: mm • Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.5±0.1 1.5±0.1 Parameter Symbol Rating

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification Complementary to 2SB0767G • Package • Large collector power dissipation PC

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm * 2.5±0.1 +0.25 4.0–0.20 0.4max. 0.4±0.08 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings Parameter 45° +0.1

2SB0767G

Abstract: 2SD0875G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767G • Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 For low-frequency output amplification Complementary to 2SD0875 (2SD875) 1.6±0.2 3 2 0.5±0.08 1.0+0.1 –0.2 1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD0875G • Package • Large collector power dissipation PC

2SB0767G

Abstract: 2SD0875G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0875G • Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO

2SB0767G

Abstract: 2SD0875G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD0875G • Features ue pl d in an c se ed lud

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 M Di ain sc te on na tin nc

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455