2SC5261 Search Results

Contextual Info: TOSHIBA 2SC5261F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : |S 2i el2= 9-5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL

2SC5261

Contextual Info: TO SH IBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = 8.5dB (f = 2GHz) 1.6 ± 0.2 ,0.8 ± 0 . 1, r— :— 1

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5261F Amplifier 1.7 2Ghz
Contextual Info: 2SC5261F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : |S2i e|2= 9.5dB (f=2GHz) 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC5261FT

Contextual Info: 2SC5261FT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : |S2iel2—9.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: T O S H IB A 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C)

2SC5261

Abstract: ma706
Contextual Info: TOSHIBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO

2SC5261

Contextual Info: TOSHIBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO

2SC5261FT

Contextual Info: 2SC5261FT TOSHIBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261FT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : |S2i e|2= 9.5dB (f=2GHz) 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TO SHIBA TENTATIVE HN9C16FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HNQfUFT • ■ u m ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

Contextual Info: HN9C13FT TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HNQT1 3 FT • ■ u m ■ M F ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

2SC5091

Abstract: 2SC5261 HN9C16FT
Contextual Info: TO SH IBA TENTATIVE HN9C16FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C16FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

65ZB

Contextual Info: TOSHIBA TENTATIVE HN9C05FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M Q f Í 1RFT • ■ ■ V MT ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS TWO devices are built in to the super-thin and ultra super mini ^ f i m '- n o i ^n a/ u< -v»ulrua gc rcv*

HN3C16

Contextual Info: TOSHIBA HN3C16FT TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FT Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0 .1 • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

2SC5261

Abstract: HN3C16FT
Contextual Info: T O S H IB A HN3C16FT TENTATIVE T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C16FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

Contextual Info: TOSHIBA TENTATIVE HN9C21 FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C21FT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 M O U N T E D DEVICES

Contextual Info: TOSHIBA TENTATIVE HN9C16FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C16FT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 M O U N T E D DEVICES

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sc5066

Abstract: TRANSISTOR 2SC5066 2SC5261 HN9C13FT
Contextual Info: TO SH IBA HN9C13FT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN9C13FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ±0.1 MHIIMTFD nF\/irF<;

Contextual Info: TOSHIBA TENTATIVE HN9C10FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C1OFT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 M O U N T E D DEVICES

2SC5261

Abstract: 2SC5464
Contextual Info: TO SH IBA TENTATIVE HN9C21 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C21FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

transistor y1 toshiba

Abstract: 2SC5091 2SC5261 HN9C05FT
Contextual Info: TO SH IBA TENTATIVE HN9C05FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C05FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

2SC5261

Abstract: HN2C14FT
Contextual Info: TO SH IBA TENTATIVE HN2C14FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C14FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 1.25 ± 0.1

2SC5261

Abstract: HN2C14FT C2PP
Contextual Info: T O S H IB A TENTATIVE HN2C14FT TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C14FT Unit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 M O U N T E D DEVICES