2SC507 Search Results

Contextual Info: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr

2SC5071

Contextual Info: Inchange Semiconductor Product Specification 2SC5071 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1

Contextual Info: T O S H IB A 2SC5075 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5075 SW ITCHING REGULATOR A N D HIGH VOLTAGE SW ITCHING Unit in mm APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • High Speed Switching : tr=1.0/<s Max. , tf=1.0,«s (Max.)

C5075

Abstract: 2SC5075 equivalent of transistor c5075 024 marking code
Contextual Info: 2SC5075 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5075 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • High-speed switching: tr = 1.0 µs max , tf = 1.0 µs (max)

c5076

Abstract: 2SC5076 IC404 2SA1905
Contextual Info: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1905

Hitachi DSA002756

Contextual Info: 2SC5079 Silicon NPN Epitaxial ADE-208-222 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline 2SC5079 Absolute Maximum Ratings Ta = 25°C

2SA19

Abstract: 2SA1905 2SC5076
Contextual Info: TO SH IBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • 8.0 ±0 .2 Low Collector Saturation Voltage : Vq^ ( s a t ) “ 0.4V (Max.) (at Ic = 3A) High Speed Switching Time : tgtg^l.O/^s (Typ.)

if amplifire

Abstract: 2SC5079
Contextual Info: 2SC5079 Silicon NPN Epitaxial Application VHF & UHF wide band amplifire MPAK–4 Features 2 • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 MHz 3 1 4 1. Collector 2. Emitter 3. Base

2SC5070

Abstract: EN4473 4473-3
Contextual Info: Ordering number:EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions unit:mm 2084A [2SC5070] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • High current capacity. · Adoption of MBIT process.

2SC5071

Contextual Info: 2SC5071 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA V VCEO 400 10 V(BR)CEO IC=25mA 400min 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max

220E

Abstract: 2SC5077 2SC5077A
Contextual Info: Power Transistors 2SC5077, 2SC5077A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC5077

2SK2752

Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Contextual Info: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867

2SC5075

Contextual Info: TO SH IBA 2SC5075 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5075 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS • • 8.0 ± 0.2 High Speed Switching : tr=1.0/^s Max. , tf^l.O/^s (Max.)

IMX5T108

Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855

2SC5075

Contextual Info: 2SC5075 TOSHIBA 2SC5075 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING Unit in mm APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • 8.0 ± 0.2 High Speed Switching : tr=1.0/^s Max. , tf=1.0/^s (Max.)

2SA1905

Abstract: 2SC5076
Contextual Info: TO SH IBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector - Saturation Voltaere 0 : Vnxr \OCOj/ = 0.4V - - - (Max.) V ✓ (at Ic = 3A) High Speed Switching Time

2SC5076

Abstract: 2SA1905 C5076
Contextual Info: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1905

2SC5078

Contextual Info: 2SC5078 Silicon NPN Epitaxial Application VHF & UHF wide band amplifire MPAK–4 Features 2 • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 MHz 3 1 4 1. Collector 2. Emitter 3. Base

5078 marking

Contextual Info: HITACHI 2SC5078-Silicon NPN Epitaxial Application VHF & UHF wide band amplifire MPAK-4 Features • High gain bandwidth product f j = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 MHz ^ 4 Table 1 Absolute Maximum Ratings Ta = 25°C

H914

Contextual Info: HITACHI 2SC5079 Silicon NPN Epitaxial Application VHF & UHF wide band amplifire M P A K -4 Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 M Hz ' 4 Table 1 Absolute Maximum Ratings

Contextual Info: 2SC5079 S ilicon N P N Epitaxial HITACHI Application V H F / UHF wide band am plifier Features • High gain bandwidth product • High gain, low noise figure fT = 12 GHz Typ PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 M H z Outline CMPAK-4 1. 2. 3. 4. 792

C5075

Contextual Info: 2SC5075 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5075 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • High-speed switching: tr = 1.0 µs max , tf = 1.0 µs (max)

Contextual Info: TO SH IBA 2SC5076 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 HIGH CURRENT SWITCHING APPLICATIONS • U n it in mm Low C ollector S atu ra tio n V o ltage : V ^ e ( s a .t ) = 0-4V (M ax.) (a t I C = 3A ) • H ig h Speed S w itch in g Tim e

Contextual Info: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS i <;r * n i g HIGH CURRENT SWITCHING APPLICATIONS U nit in mm 8.0 ± 0.2 • Low Collector Saturation Voltage : V q e ( s a t ) “ 0.4V (Max.) (at I c = 3A) • High Speed Switching Time