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Rochester Electronics LLC
2SB564-AZ PNP SILICON TRANSISTOR
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2SB564 datasheet (21)

Part ECAD Model Manufacturer Description Type PDF
2SB564 2SB564 ECAD Model NEC Semiconductor Selection Guide 1995 Original PDF
2SB564 2SB564 ECAD Model NEC Semiconductor Selection Guide Original PDF
2SB564 2SB564 ECAD Model Various Russian Datasheets Transistor Original PDF
2SB564 2SB564 ECAD Model Micro Electronics Silicon PNP transistor for use in driver and output stages of audio frequency amplifiers Scan PDF
2SB564 2SB564 ECAD Model Micro Electronics Semiconductor Device Data Book Scan PDF
2SB564 2SB564 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB564 2SB564 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SB564 2SB564 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SB564 2SB564 ECAD Model Others Shortform Transistor Datasheet Guide Scan PDF
2SB564 2SB564 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB564 2SB564 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SB564 2SB564 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SB564 2SB564 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SB564 2SB564 ECAD Model Others Cross Reference Datasheet Scan PDF
2SB564 2SB564 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SB564 2SB564 ECAD Model NEC PNP SILICON TRANSISTOR Scan PDF
2SB564A 2SB564A ECAD Model DC Components TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Original PDF
2SB564A 2SB564A ECAD Model USHA Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. Scan PDF
2SB564K 2SB564K ECAD Model NEC PNP Silicon Transistor Scan PDF
2SB564L 2SB564L ECAD Model NEC PNP Silicon Transistor Scan PDF

2SB564 Datasheets Context Search

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2SB564

Abstract: No abstract text available
Text: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2SB564 Characteristics at , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2SB564 TYPICAL , : 07/12/2002 Cob-Collector to Base Capacitance-pF ST 2SB564 COLLECTOR TO BASE CAPACITANCE vs


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PDF 2SB564 2SB564
2SB564

Abstract: 2SB564, transistor
Text: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC , ST 2SB564 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain , Code: 724) Dated : 07/12/2002 ST 2SB564 TYPICAL CHARACTERISTICS (Ta=25oC unless otherwise noted , Capacitance-pF ST 2SB564 COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 100 f=1.0MHz I E


Original
PDF 2SB564 2SB564 2SB564, transistor
2SB564

Abstract: 2SB564, transistor
Text: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SB564 Characteristics , ST 2SB564 TYPICAL CHARACTERISTICS (Ta=25oC unless otherwise noted) 100 150 200 , 2SB564 COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 100 f=1.0MHz I E =0 50 20


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PDF 2SB564 2SB564 2SB564, transistor
2SB564

Abstract: No abstract text available
Text: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC , ST 2SB564 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain , , Stock Code: 724) R Dated : 07/12/2002 ST 2SB564 TYPICAL CHARACTERISTICS (Ta=25oC unless , Capacitance-pF ST 2SB564 COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 100 f=1.0MHz I E


Original
PDF 2SB564 2SB564
2SB564

Abstract: m0471 2SD471 2SB564, transistor Scans-005445
Text: NEC PINIP SILICON TRANSISTOR 2SB564 DESCRIPTION The 2SB564 is designed for use in driver and output stages of audio frequency amplifiers. FEATURES • High Total Power Dissipation: 1.0 W at 25 °C Ambient Temperature. • Complementary to the NEC 2SD471 Transistor. ABSOLUTE MAXIMUM RATINGS Maximum , Range 90 - 180 135 - 270 200 - 400 hpEI Test Conditions: Vrc=-1.0 V,-lc=-0.1 A 200 NEC 2SB564 , Voltage-V 201 2SB564 _NEC COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 202


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PDF 2SB564 2SB564 2SD471 -50m-100m-200m-500m-1-2 100m-2Ã Om-500m m0471 2SB564, transistor Scans-005445
2SB564

Abstract: 2SD471
Text: SEC ELECTRON DEVICE SILICON TRANSISTOR 2SB564 AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB564 is designed fo r use in driver and o u tp u t stages o f audio frequency am plifiers. FEATURES PACKAGE DIMENSIONS in m illim e te rs (inches) 7 0 MA) io m , 1.0 M H z V CE = - 6 . 0 V , l E = 1 0 m A 2SB564 TYPICAL CHARACTERISTICS (Ta = 25 °C unless , DEVICE 2SB564 D C C U R R E N T G A I N vs. COLLECTOR CURRENT G A IN B A N D W ID T H PRODUCT vs


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PDF 2SB564 2SB564 2SD471
2sb564

Abstract: 2SD471
Text: W & · t t v 2SB564 2SD471 SILICON TRANSISTORS TO-92 The 2SB564 (PNP) and 2SD471 (NPN) are designed for use in driver and output stages of audio frequency amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction & Storage Temperature VCBO VCEO VEBO IC Ptot Tj,Tstg ECB 30V 25V 5V 1A 1 W -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER Collector-Base Breakdown Voltage


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PDF 2SB564 2SD471 2SB564 100nA 100mA 2SD471
2SB504

Abstract: 2SB507 2SB506A 2SB508 2SB511 2SD325 2sb560 2SB506 2SB536 2SD331
Text: -25 -20 -1 0. 9 -1 -20 85 240 -2 -0.5 -0.5 -0.8 -0.08 2SB564 BS LF PA -30 -25 -1 1 -0. 1 -30 90 , -0.01 36* 2SD471 (SP—8) ECB 2SB564 7* -4 -0.5 0. 3* 2. 5* 2SD476AK TO-220AB® BCE


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PDF Ta-25-C) 2SB434G 2SB435G 2SB502A 2SB503A 2SB504 2SB504A -60SD552 2SB552 2SD553 2SB507 2SB506A 2SB508 2SB511 2SD325 2sb560 2SB506 2SB536 2SD331
2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Text: - 17 - s € Type No. tt « Manuf. h $ SANYO Ä 2 TOSHIBA B S NEC B ÎL HITACHI « ± a FUJITSU fâ t MATSUSHITA h * MITSUBISHI □ — a ROHM 2SA 892 ' •y-virv 2SB675 2SB727(K) 2SB1339 2SA 893 - ED w 2SA1207 2SA970 2SA988 2 SA1127 2SA904A 2 SA10 3 8 2SA 893A ED 2SA970 2SA1038 2SA 894 SÎBÎS 2SB598 2SB564 2SB562 2SA683 2SA934 2SA 895 St0$S 2SA1005 2SA838 2SA 896 y - 2SB1208 2SA949 2SB648A 2SA1124 2SA 89/ V—— 2SA715 2SA699A 2SB1064 2SA 898 "'


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PDF 2SB675 2SB727 2SB1339 2SA1207 2SA970 2SA988 SA1127 2SA904A 2SA970 2SA1038 2SA564A 2SA906 2sa1015 2SA988 2SA1142 2sa949 2SA1038
2SD471

Abstract: BO9477 2SB564 2SD471 TO-92
Text: S. 2SD471 m ç V -, % ■f • V SILICON TRANSISTORS The 2SB564 (PNP) and 2SD471 (NPN) are designed for use in driver and output stages of audio frequency amplifiers. TO-92 ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCB0 ECB 30V Collector-Emitter Voltage VCE0 25V Emitter-Base Voltage VE B0 5V Collector Current IC 1A Total Power Dissipation Ptot 1W Operating Junction & Storage Temperature Tj,Tstg -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MIN MAX UNIT TEST


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PDF 2SD471 2SB564 2SD471 100mA 300ns, BO9477 2SB564 2SD471 TO-92
2SB1013

Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
Text: 1 035 = « 2SB544 2SB564 2SA683 2SA934 2SB 1036 të T 2SA1049 2SA1174 2SA1038 2SB 1037


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PDF 2SA1160 2SB1068 2SB976 2SB1426 2SA1020 2SB1116 2SB621 2SB1Q44M 2SB1134 2SB1094 2SB1013 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
TO-92B

Abstract: 2SC959 2SC1175
Text: 2SA950 2SA642 2SA723 2SB564 2SA598 2SB621 2SB621A _ - 180+ 200+ 200+ 15+ 20 20 # HFE


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PDF 2SC938 2SC959 2SC10Q8 2SC1175 2SC1209 2SC1317 2SC1318 2SC1346 2SC1347 2SC1672 TO-92B
2SD471

Abstract: 2SB564 BO9477
Text: 2SD471 r, , > . - SILICON ' TRANSISTORS The 2SB564 (PNP) and 2SD471 (NPN) are designed for TO-92 use in driver and output stages of audio frequency amplifiers. ' |rr ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCB0 ECB 30V Collector-Emitter Voltage VCE0 25V Emitter-Base Voltage VE B0 5V Collector Current IC 1A Total Power Dissipation Ptot 1W Operating Junction & Storage Temperature Tj,Tstg -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL


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PDF 2SD471 2SB564 100nA 100mA 2SD471 2SB564 BO9477
SS2205

Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
Text: 2SB564 2SB740 2SA1283 2SA934 2 SA 1 534A fé T 2SB764 2SA1Û20 2SB734 2SB740 2SA1283 2SB1043


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PDF SS2205 UN411H RT1P234S DTA123YS 2SA1781 2SA1162 2SB736 2SB709A 2SA1235 2SA1753 SS2205 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
2SC200I

Abstract: D471 2SA593 2sc1175 2SC1346 92PU01A 92PU45 2SA659 2SA719 2SA730
Text: &D471 N TO-92B 1000 1 25 90 400 » ÎOO i 0.33 t . 2SB564 ¡2SD545 ; _ N TO-92B 500 1 20 60 360 n 50 2


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PDF 2SC1175 2SA659 2SC1209 O-92B 2SA719 2SC1318 25A720 2SC1346 2SC200I D471 2SA593 92PU01A 92PU45 2SA659 2SA719 2SA730
TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Text: -92B 1000 1 25 90 400 # 100 1 0.35 , 2SB564 2SD545 N TO-92B 500 1 20 60 560 # 50 2 0.3 0.5 180+ 15


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PDF 2SC1008 2SC1175 O-92B 2SA659 2SC1209 2SC1317 2SA719 2SC1318 TO-237a 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
2SD471

Abstract: transistor 2Sd471 2SD471 L 2SB564
Text: NEC NPN SILICON TRANSISTOR 2SD471 DESCRIPTION The 2SD471 is designed for use in driver and output stages of audio frequency amplifiers. FEATURES • High Total Power Dissipation: 1.0 W at 25° C Ambient Temperature. • Complementary to the NEC 2SB564 PNP Transistor. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Têmperature .—55to+150°C Junction Temperature .+150 °C Maximum Maximum Power Dissipation (Ta = 25°C) Total Power Dissipation .


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PDF 2SD471 2SD471 2SB564 transistor 2Sd471 2SD471 L
2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Text: 2SA1221 2SC2958 ~500 m 2SB564 2SD471 2SA1460* 2SB734 2SC3733* 2SD774 2SD1582* 2SA1222 , 2SA915 2SA1173 2SA916 2SB564 2SA1609 2SB811 2SB798 2SB605 2SB799 2SB733 2SB734


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PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
2sc1175

Abstract: 2SC875 2N6728 2SA606 2N6714 2SA532 2SA532 complementary 2sa708 2N6428 2N6715
Text: 50 5 0.8 0.5 100+ 15+ 2SD438 2SB564 P TO-39 1000 1 25 90 400 100 1 0.35 1 - - 2SD471 2SB598 P TO


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PDF 2N6428 O-92A 2N6714 O-237 2N6726 2N6715 2N6727 2N6716 2sc1175 2SC875 2N6728 2SA606 2SA532 2SA532 complementary 2sa708
92PU07

Abstract: TO-237 MICRO ELF-002
Text: 2SA731 2SA817 2SA890 2SA891 _ 2SA950 2SA642 2SA723 2SB564 2SA598 2SB621 2SB621A 92PU51 92PU51A


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PDF T-27-01 O-92B 92PU07 TO-237 MICRO ELF-002
2SC875 D

Abstract: 2N5816 2SC875 2SA532 2SA503 2SA504 2N5822 2SC87 2sc1175 2N5819
Text: 2SB564 P TO-39 1000 1 25 90 400 100 1 0.35 1 — - 2SD471 2SB598 P TO-92 B 500 1 20 60 560 # 50 2 0.5


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PDF 2N5816 O-92F 2N5817 2N5817 2N5816 2N5818 2N5819 2N5819 2SC875 D 2SC875 2SA532 2SA503 2SA504 2N5822 2SC87 2sc1175
92PU

Abstract: 92PU05 TQ-237 92PU06 2SA598
Text: 2 SA 9 5 0 2SA 642 2SA723 2SB564 2SA598 2SB621 2 SB 62 1 A 92PU51 92P U 51A 92PU52 92PU55 92PU56


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PDF O-92B 92PU 92PU05 TQ-237 92PU06 2SA598
2SC875 E

Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
Text: Medium Power Amplifiers and Switches TYPE NO. 2N5810 2N5811 2N5812 2N5813 2N5814 2N5815 2N5816 2N5817 2N5818 2N5819 2N5820 2N5821 2N5822 2N5823 2N6428 2SA497 2SA498 2SA503 2SA504 2SA532 2SA539 2SA544 2SA562 2SA606 2SA642 2SA643 2SA659 2SA683 2SA708 2SA719 2SA720 2SA723 2SA733 2SA817 2SA817A 2SA890 2SA891 2SA950 2SA952 2SB504A 2SB560 2SB564 2SB598 2SB621 2SB621A 2SC32 2SC497 2SC498 2SC503 2SC504 2SC815 2SC875 2SC876 2SC933 2SC934 POLA RITY N P N P N P N P N P N P N P N P P P P P P P P P P P P P P P P P P P P


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PDF 2N5810 2N5811 2N5812 2N5813 2N5814 2N5815 2N5816 2N5817 2N5818 2N5819 2SC875 E 2SC875 2N5822 2SB504A
to3a

Abstract: 2SB536 T03B 2SB511 2SD331 2SD325 2SD3258 2SD314 2SB546A 2SD341
Text: (TO-92MOD) ECB 2SD468 130* 6 0.01 22* 2SB564 (SP—8) ECB 2SD471 2* TO-3Ä5 BEC


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PDF 2SD124AH 2SD125AH 2SD126H 2SD234G 2SD235G 2SD288 2SD289 2SD313 SB547A T0-220AAÂ to3a 2SB536 T03B 2SB511 2SD331 2SD325 2SD3258 2SD314 2SB546A 2SD341
2sc498

Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
Text: 50 5 0.8 0.5 100+ 15+ 2SD438 2SB564 P TO-39 1000 1 25 90 400 100 1 0.35 1 - - 2SD471 2SB598 P TO


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PDF 2N6428 O-92A 2N6714 O-237 2N6726 2N6715 2N6727 2N6716 2sc498 2SC875 2SA503 2sc1175 FT501 2SA532 2SA606 2sa708
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