2SA2113
Abstract: 2SC5916 transistor 2A pnp
Contextual Info: 2SA2113 Transistor Medium power transistor −30V, −2A 2SA2113 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 0.6 1.0MAX 0.85 0.1 0.3 (1)Base (2)Emitter (3)Collector 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A)
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2sa2113-200mv2sc5916transistor 2a pnp |
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TRANSISTOR A01
Contextual Info: 2SA2113 Transistor Medium power transistor −30V, −2A 2SA2113 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 0.6 1.0MAX 0.85 0.1 0.3 (1)Emitter (2)Base (3)Collector 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A)
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2sa2113200mv2sc5916transistor a01 |
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2SA2113
Abstract: 2SC5916
Contextual Info: 2SA2113 Transistor Medium power transistor −30V, −2A 2SA2113 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 0.6 1.0MAX 0.85 0.1 0.3 (1)Base (2)Emitter (3)Collector 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A)
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2SC5734K
Abstract: 2sc5917 2SC5734 2SA2054
Contextual Info: Excellence in Electronics 2005 Ver.1 T ransistor New Products Pari No. B V ceo lc Ip N PN M [A] [A] 2SA2048K 2SC5730K 30 1 2 2SA2054K 2SC5734K 90 0.5 1 Package SMT3 ^ Pc=0.2W " PNP Pari No. Package TSMT3 Pc=0.5W * W Package ATV P c=1W J L 'V BV ceo [V] hF:
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2sa2048k2sa2054k2sc5730k2sc5734k+92sa20482sa21132sa21342sa20902sc59162sc59842sc59172sc57342sa2054
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02cz1002cz1102cz1202cz13+1502cz1502cz1602cz1802cz202cz20stf12a80bstc1026bstd1046btb04-600sapstf6a80bstd1040to510dhbstc1040to812njbtb15-700b
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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o-220fm47p4869e2sa21602sa2149+82sc6005rqw200rdx100n45rqa200n03rqw200n03rla130n03rdx*100n452sc6027
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2sc5922
Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Contextual Info: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability
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200mw500mw15min85max+1115max2sc59222sc57342sc59172sc59892sa20542sc59192sc59872sc5734k2sc59182sc5982
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2SA2113
Abstract: 2SC5916
Contextual Info: 2SC5916 Transistor Medium power transistor 30V, 2A 2SC5916 !External dimensions (Units : mm) TSMT3 0.4 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 (1) Base (2) Emitter (3) Collector 0.7 0.16 (2) 0.95 0.95 2.8 1.6 2.9 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A)
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2sc5916200mv2sa2113 |
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2SA2113
Abstract: 2SC5916
Contextual Info: 2SC5916 Transistor Medium power transistor 30V, 2A 2SC5916 !External dimensions (Units : mm) TSMT3 0.4 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 (1) Base (2) Emitter (3) Collector 0.7 0.16 (2) 0.95 0.95 2.8 1.6 2.9 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A)
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2sc5916200mv2sa2113 |
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