2SA206 Search Results

2SA2066

Contextual Info: 2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

2SA2069

Contextual Info: 2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.15 A • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)

2SA2066

Contextual Info: 2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A · Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

A2064

Contextual Info: Power Transistors 2SA2064 Silicon PNP epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 φ 3.2±0.1 • Features 13.7±0.2

TA-3317

Abstract: 2SC5774 2SA2062
Contextual Info: Ordering number : ENN6987 2SA2062 / 2SC5774 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 140V / 10A, AF 70W Output Applications Features • • • Package Dimensions Large current capacitance. Wide ASO and high durability against breakdown.

2SA2066

Contextual Info: 2SA2066 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2066 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 • スイッチング時間が速い。 : tf = 25 ns 標準

Contextual Info: 2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.15 A • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)

Contextual Info: 2SA2061 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 200 to 500 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

Contextual Info: 2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Industrial Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)

Contextual Info: 2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.15 A • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)

2SA2064

Abstract: 2SA20
Contextual Info: Power Transistors 2SA2064 Silicon PNP epitaxial planar type Unit: mm Power supply for audio & visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 φ 3.2±0.1 • Features 13.7±0.2

Contextual Info: 2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.15 A • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)

2SA2060

Contextual Info: 2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)

2SA2061

Contextual Info: 2SA2061 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2061 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = −0.19 V (最大)

5001c

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2067 Silicon PNP epitaxial planar type Unit: mm 1.0±0.2 2.5±0.1 13.0±0.2 • High speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat)

2SA2065

Contextual Info: 2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.15 A • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)

2SA1235A

Abstract: 2SA20 85400 2SA2068
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SA2068 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA2068 is a super mini package resin sealed

Contextual Info: 2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 200 to 500 IC = −0.3 A • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)

marking 20

Contextual Info: 2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.15 A • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)

Contextual Info: 2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

2SA2067

Contextual Info: Power Transistors 2SA2067 Silicon PNP epitaxial planar type Unit: mm 1.0±0.2 2.5±0.1 13.0±0.2 • High speed switching tstg: storage time/tf: fall time is short • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity

Contextual Info: 2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

Contextual Info: 2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.15 A • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)

2SA2061

Abstract: 2SA20
Contextual Info: 2SA2061 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)