| 2N6059 |
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Comset Semiconductors
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Power Complementary Silicon Transistors - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
Original |
PDF
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93.93KB |
4 |
| 2N6059 |
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Microsemi
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NPN Darlington Power Silicon Transistor |
Original |
PDF
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54.65KB |
2 |
| 2N6059 |
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Motorola
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Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
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PDF
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658.11KB |
6 |
| 2N6059 |
|
On Semiconductor
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TRANS DARLINGTON NPN 100V 12A 3TO-204AA - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
Original |
PDF
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127.13KB |
8 |
| 2N6059 |
|
On Semiconductor
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DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
Original |
PDF
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194.5KB |
6 |
| 2N6059 |
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Semelab
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Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
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PDF
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11.79KB |
1 |
| 2N6059 |
|
STMicroelectronics
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TRANS DARLINGTON NPN 100V 12A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
Original |
PDF
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42.47KB |
4 |
| 2N6059 |
|
STMicroelectronics
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SILICON NPN POWER DARLINGTON TRANSISTOR - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
Original |
PDF
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64.95KB |
4 |
| 2N6059 |
|
Advanced Semiconductor
|
Silicon Transistor Selection Guide |
Scan |
PDF
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404.58KB |
5 |
| 2N6059 |
|
Boca Semiconductor
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DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
Scan |
PDF
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197.93KB |
4 |
| 2N6059 |
|
Central Semiconductor
|
Darlington Bipolar Transistor, NPN, 100V at Tc=25C, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
Scan |
PDF
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70.32KB |
1 |
| 2N6059 |
|
Central Semiconductor
|
POWER DARLINGTON TRANSISTORS (METAL) |
Scan |
PDF
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398.7KB |
4 |
| 2N6059 |
|
Crimson Semiconductor
|
EPITAXIAL BASE / PLANAR Transistors |
Scan |
PDF
|
40.14KB |
1 |
| 2N6059 |
|
Fairchild Semiconductor
|
Full Line Condensed Catalogue 1977 |
Scan |
PDF
|
43.59KB |
1 |
|
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| 2N6059 |
|
General Electric
|
12A N-P-N monolithic darlington power transistor. - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
Scan |
PDF
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170.65KB |
4 |
| 2N6059 |
|
LAMBDA
|
Semiconductor Data Book V1 1988 |
Scan |
PDF
|
184.7KB |
6 |
| 2N6059 |
|
Mospec
|
POWER TRANSISTORS(12A,150W) - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 |
Scan |
PDF
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192.72KB |
4 |
| 2N6059 |
|
Motorola
|
Motorola Semiconductor Data & Cross Reference Book |
Scan |
PDF
|
310.97KB |
7 |
| 2N6059 |
|
Motorola
|
European Master Selection Guide 1986 |
Scan |
PDF
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51.86KB |
1 |
| 2N6059 |
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Motorola
|
Power Transistor Selection Guide |
Scan |
PDF
|
325.11KB |
6 |
