| 2N6052 |
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Central Semiconductor
|
Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS DARL PNP 100V 12A TO-3 |
Original |
PDF
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2 |
| 2N6052 |
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Comset Semiconductors
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Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 |
Original |
PDF
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93.93KB |
4 |
| 2N6052 |
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Microsemi
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TRANS DARLINGTON PNP 100V 12A 3TO-3 - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 |
Original |
PDF
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54.63KB |
2 |
| 2N6052 |
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Motorola
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Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 |
Original |
PDF
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658.11KB |
6 |
| 2N6052 |
|
On Semiconductor
|
2N6052 - TRANSISTOR 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3, BIP General Purpose Power |
Original |
PDF
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131.11KB |
5 |
| 2N6052 |
|
On Semiconductor
|
Darlington Complementary Silicon Power Transistors |
Original |
PDF
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149.48KB |
7 |
| 2N6052 |
|
On Semiconductor
|
Darlington Complementary Silicon Power Transistor |
Original |
PDF
|
127.13KB |
8 |
| 2N6052 |
|
Semelab
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Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 |
Original |
PDF
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11.81KB |
1 |
| 2N6052 |
|
Advanced Semiconductor
|
Silicon Transistor Selection Guide |
Scan |
PDF
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404.58KB |
5 |
| 2N6052 |
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Boca Semiconductor
|
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 |
Scan |
PDF
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197.93KB |
4 |
| 2N6052 |
|
Central Semiconductor
|
Darlington Bipolar Transistor, PNP, 100V at Tc=25C, TO-3, 2-Pin - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 |
Scan |
PDF
|
70.32KB |
1 |
| 2N6052 |
|
Central Semiconductor
|
POWER DARLINGTON TRANSISTORS (METAL) |
Scan |
PDF
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398.7KB |
4 |
| 2N6052 |
|
Crimson Semiconductor
|
EPITAXIAL BASE / PLANAR Transistors |
Scan |
PDF
|
40.14KB |
1 |
| 2N6052 |
|
Fairchild Semiconductor
|
Full Line Condensed Catalogue 1977 |
Scan |
PDF
|
43.59KB |
1 |
|
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| 2N6052 |
|
General Electric
|
12A P-N-P monolithic darlington power transistor. - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 |
Scan |
PDF
|
170.65KB |
4 |
| 2N6052 |
|
LAMBDA
|
Semiconductor Data Book V1 1988 |
Scan |
PDF
|
184.69KB |
6 |
| 2N6052 |
|
Mospec
|
POWER TRANSISTORS(12A,150W) - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 |
Scan |
PDF
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192.72KB |
4 |
| 2N6052 |
|
Motorola
|
The European Selection Data Book 1976 |
Scan |
PDF
|
55.78KB |
1 |
| 2N6052 |
|
Motorola
|
Power Transistor Selection Guide |
Scan |
PDF
|
325.11KB |
6 |
| 2N6052 |
|
Motorola
|
Motorola Semiconductor Data & Cross Reference Book |
Scan |
PDF
|
310.97KB |
7 |
