2950 MOUNTING BLOCK Search Results

byw 150

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

byw 150

Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

byw 04-15

Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

byw 91-4

Abstract: BYW series byw29
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

diode BYW 66

Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYW29

Abstract: JESD22-B102 J-STD-002
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYW295

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: VBO 88 IdAV = 92 A VRRM = 800-1600 V Single Phase Rectiier Bridge in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;

Contextual Info: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;

Contextual Info: VBO 88 Three Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t ~L 9 ~K 10 VBO 88-08NO7

Contextual Info: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;

Contextual Info: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t ~L 9 ~K 10 VBO 88-08NO7

Contextual Info: VUO 122 Three Phase Rectifier Bridge IdAV = 117 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 ~A 1 ~L 9 ~K 10 VUO 122-08NO7 VUO 122-12NO7 VUO 122-14NO7 VUO 122-16NO7 EG 1 Symbol Conditions

1x100

Contextual Info: Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy GXV SURGE VOLTAGE SUPPRESSORS Pnp diffused silicon structure Symmetric blocking characteristics

Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features Product Description Functional Diagram The AM1 is a general purpose gain block that • 250-3000 MHz Bandwidth 4 offers good dynamic range in a low cost surface 37 dBm Output IP3

Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 250-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description

Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 250-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description

pin configuration of 4081

Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description

Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description

Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +39 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTTF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description

Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +39 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTTF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description

Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description