pn2222a
Abstract: PN2222 pnp PN2222A le PN2222
Contextual Info: II N AMER PHILIPS/DISCRETE bTE D • bbSB'm DDSflOMb 244 ■ APX PN2222 PN2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope prim arily intended fo r linear and switching applications. P-N-P complement is PN2907/2907A.
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PN2222
PN2222A
PN2907/2907A.
MBB012
pn2222a
PN2222 pnp
PN2222A le
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2907
Abstract: 2N2907 2907a 2N2908 2N2906 2N2907A 2n2906a A2907A J 2N2907 2IM2907
Contextual Info: * 2 N 2906,A * 2 N 2907, A PNP SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS PNPSILICIUM, PLANAR EPITAXIAUX Compì, of 2N 2221, A and 2N 2222, A ^ Preferred device D is p o s itif recommandé - LF or HF amplification Amplification BF ou HF - Medium current switchinçi
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2N2906
2N2907
2907
2907a
2N2908
2N2907A
2n2906a
A2907A
J 2N2907
2IM2907
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marking code nt amplifier
Abstract: MARKING 2907A 2907A BF
Contextual Info: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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PN2907A
MMBT2907A
PZT2907A
PN2907A
MMBT2907A
OT-23
OT-223
O-92-3
marking code nt amplifier
MARKING 2907A
2907A BF
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1N 2907A
Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
Contextual Info: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series
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FMMT2907
FMMT2907A
FMMT2222
OT-23
FMMT2907A
FMMT2369A
1N 2907A
BSS65
A12 marking
marking H6 sot 23
PNP 2907a SOT23
marking FMMT2907A
2907a
BCV72
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tm 1621
Abstract: BD 811 BT3904 MBD6050 BF5484 2sa 2222a BTA 36 BF5457 1s2836 5T2907A
Contextual Info: C r o s s R e f e r e n c e Guide to M ini M old D e v ic e M o t o r o la NEC N o te M o t o r o la NEC N o te E u rop ean NEC None M M BT6429 N one B A T 18 2 S A 8 12 M M .B T A 0 5 N one BA V 70 152838 2 S A 8 12 M M BTA 06 None BA V 99 1SS123 ¿SA M M B A 8 LI
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BT6429
1SS123
BFR30
BFR92
BFS17
BFS18
BFS40
BFS41
BFS46
BFS85
tm 1621
BD 811
BT3904
MBD6050
BF5484
2sa 2222a
BTA 36
BF5457
1s2836
5T2907A
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T056
Abstract: 2904 2904a 2905 2906 transistor t05 PN2904 T018 BFX29 N2905
Contextual Info: PNP Silicon Transistors PN P S ilic o n Planar Transistors fo r m ed ium level sw itching Type PTOT 2 P h/rfdO V /IO m A hF f V 5 5 4 4 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 — > 50 — 3 3 > 40 > 40 50 . 200 (10/50) 50 . 200 (0.4/10) >40 (10/150) > 40 (10/150)
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0V/50mA)
150mA/15mA)
PN2904
T056
2904
2904a
2905
2906
transistor t05
T018
BFX29
N2905
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2907A EQUIVALENT
Abstract: 2222A 2907 transistor 4393 s0918 BFQ22 equivalent a 2907 SOR2369 S02907 bfr93
Contextual Info: m icropackaged transistors according to CNET specifications transistors en microboitier selon spécification CN ET Réf. C N E T Standard catalog product Produit catalogue standard TCH 918.3 TCH 918.5 SO R 918 S0 9 1 8 2N918 2N 918 TCH 2222.3 TCH 2222.5 S O R 2222
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2N918
S0918
S02222
S02369
S02907
SOR2907A
S02907"
S02894
2907A EQUIVALENT
2222A
2907
transistor 4393
BFQ22 equivalent
a 2907
SOR2369
bfr93
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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2N2475
Abstract: BFS36 BFS38 BFS46 BFS41 2N2605 2N930 BFS36A BFS42 BFS38A
Contextual Info: M ICRO-E CHARACTERISTICS AT 25°C p-n - -P n -p - n l\/l C I'M1U 1IPIV V/1I CURRENT GENERAL PURPOSE IVI tU TRANSISTORS Parameter BFS38A M in. Test Conditions M in. 25 - - 35 v CBO Rated Max. - VCEO sus l c = 5mA, Iß —0 25 v EBCi Rated Max. - 5 >CBO V c b = V c b O f*atec* ^ ax' ^E= 0
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BFS38A
BFS38
BFS39
BFS40A
BFS40
BFS41
BFS36
2N930
BFS37
2N2605
2N2475
BFS38
BFS46
BFS41
2N2605
BFS36A
BFS42
BFS38A
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2907
Abstract: N2907A 2N2907 N2907 2n2906 2907 pnp transistor 2907A a 2907 transistor 2907 2906
Contextual Info: 'W ' 2 N 2906 * 2 N 2906 A * 2 N 2907 O * 2 N 2907 A Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: Verstärker und S chalter Applications: A m plifiers and sw itches Features: Besondere Merkmale:
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2n3866s
Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Contextual Info: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1
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BYV34-300SM
BYV34-400ASM
BYV34--
400RSM
400SM
BYV34-500ASM
BYV34-500RSM
BYV34-500SM
LM137-SM
2n3866s
DIODE 69a LM
2N3904CSM
2N3904DCSM
2N3904D
LM7805sm
2N3055E
LM7808S
LCC3 weight
bfy82
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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2904a
Abstract: sc2035
Contextual Info: PNP SILICON ANNULAR HERMETIC TRANSISTORS 2N2904,A* . . . d e s ig n e d f o r h ig h - s p e e d s w it c h in g c ir c u it s , D C t o V H F a m p l i f i e r a p p lic a t i o n s a n d c o m p le m e n t a r y c ir c u it r y . thru • H ig h D C C u r r e n t G a in S p e c if ie d — 0 .1 t o 5 0 0 m A d c
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2N2904
2N2907
2904a
sc2035
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bcf 69
Abstract: 2222a transistor BCF 70 catalogue de transistor transistor 2222a 2907 TRANSISTOR PNP SO1613 BCW General Purpose Transistor 300V transistor pnp 2a 2221A
Contextual Info: m icropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de com m utation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221
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O-236
T0236.
bcf 69
2222a
transistor BCF 70
catalogue de transistor
transistor 2222a
2907 TRANSISTOR PNP
SO1613
BCW General Purpose Transistor
300V transistor pnp 2a
2221A
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ph 4148
Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31
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BAS29
BA481
BBY31
BAT81
BAS81
BBY40
BC847
BAT54
BC847A
BT2907
ph 4148
f494
ph+4148+zener+diode
PXTA14
BC546 SMD
SMD BC547
BC327/BC517
BC327-40 SMD
BST74
BFG 71
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BC 2219a
Abstract: BFX48 transistor 3504 npn 2N3108 2N3109 BFY50 BFY51 BFY56A
Contextual Info: ¿ 7 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# M M I & J O T « ! SMALL SIGNAL TRANSISTORS NPN GENERAL PURPOSE TRANSISTORS - TO 39 v CEO V C ER* h FE m in/m ax 3> <C Type mA (V) v CE(sat) m ax Ï ic (mA) (V) Pfot «T min ‘ off* (M H z) (ns) (m W )
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BFY51
BFY50
BFY56A
BFX48
BC 2219a
transistor 3504 npn
2N3108
2N3109
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BEL 100N TRANSISTOR
Abstract: bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187
Contextual Info: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts min hFE at bias mm /max. Ic mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 —
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27min.
37min.
35friin.
50min
50min.
40min
40min.
BEL 100N TRANSISTOR
bel 187 transistor
PN3904
bel 188 transistor
bel 187 transistor npn
bel 187
BEL 100N
bel 187 NPN TRANSISTOR
bel 188 transistor pnp
TRANSISTOR BC 187
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SO4403
Abstract: F5GL marking n20 So642 SO3903
Contextual Info: S G S— THOMSON 71C D 1 7 ^ E CÎR37 0 0 0 4 ^ 1 , 3 | THOÎÏÎSOM SEMICONDUCTORS_ ' T - J r - // y . 3A f & switching transistors Characteristics at 2 5 °C Maximum Type« ratings NPN PNP p »o» VCEO (mWJ (V) 200 12 h2lE@ le min BSV 52
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BFY50 equivalent
Abstract: 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti
Contextual Info: Discrete Semiconductors T exas In s t r u m e n t s Absolute Maximum Rating hFE at Collector Current CV Number Commercial Case Equivalent Outline Polarity VC B VCE V eb hFE V V V hFE Ic Min. fT MHz Converted to BS9300 Small Signal Planar CV continued Comments
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CV7722
bfy50
CV7723
BFY51
CV7724
BFY52
CV7725
CV7726
BFY50 equivalent
2n2222 texas instruments
CV7756
bfy51 equivalent
CV7735
BFY52 equivalent
equivalent of 2n2222
2N2222 npn small signal current gain
2n2222 equivalent 2n2484
2n2222 ti
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BDP 284
Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
Q62702-A829
Q62702-A859
Q62702-A950
Q62702-A952
Q62702-A608
Q62702-A718
Q62702-A687
BDP 284
BAV 217
Q62702-C2259
BAT 545
Q62702F1240
Q62702-A773
bdp 497
Q62702-C944
Q62702-D339
Q62702-C1529
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2N3707 DIODE
Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed
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ZTX330,
ZTX331,
BCW20
BCW22
2N3707
2N929
ZTX107
ZTX108
ZTX1I09
BC107
2N3707 DIODE
2n4058
2N2475
BC107 equivalent
Competitive
BC108
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BEL100N
Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
Contextual Info: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218
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2N2218
285max
2N2219A
2N2221A
222STOR
BEL100N
2N3500
2N3501
2N3501TV
20min.
bel 100n transistor
41 bf
BEL100
BEL100N TRANSISTOR
transistor BF 245
BEL 167 transistor
BEL 100N
BEL BF200
BF200 transistor
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BEL 100N TRANSISTOR
Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ
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OCR Scan
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143S3Tfl
2N2218
285max
2N2219A
2N3501TV
20min.
22min.
2N918
2N929
BEL 100N TRANSISTOR
BEL100N
bel 100n transistor npn
BEL 100N
2n 2222a transistor
BEL100
TRANSISTOR bd 657
BF200 transistor
transistor BF 245
bd115
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