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2907A
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ITT Semiconductors
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Transistors 1980 |
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2907A
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Unknown
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Shortform Transistor PDF Datasheet |
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174.53KB |
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MMDT2907A
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JCET Group
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MMDT2907A is a dual PNP transistor in SOT-363 package with -60V collector-base and collector-emitter breakdown voltage, -600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300. |
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MMBT2907A
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AK Semiconductor
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PNP transistor in SOT-23 package with -60 V collector-base and collector-emitter voltage, 600 mA continuous collector current, 250 mW power dissipation, and 200 MHz current gain bandwidth product. |
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MMBT2907A
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Shandong Jingdao Microelectronics Co Ltd
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PNP transistor in SOT-23 package with -60V collector-base and collector-emitter voltage, -5V emitter-base voltage, -600mA continuous collector current, 250mW power dissipation, and DC current gain ranging from 100 to 300. |
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PZT2907A
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-223 package with -60 V collector-base and collector-emitter voltage, -0.6 A collector current, 1 W power dissipation, and DC current gain up to 300. |
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MMBT2907A
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CREATEK Microelectronics
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PNP small signal transistor in SOT-23 package, with -60 V collector-base and collector-emitter voltage, -600 mA collector current, 250 mW power dissipation, and DC current gain up to 300. |
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PZT2907A
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JCET Group
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PZT2907A is a PNP transistor in SOT-223 plastic package, featuring 60 V collector-base and collector-emitter breakdown voltage, 0.6 A continuous collector current, 1 W collector power dissipation, and DC current gain up to 300. |
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MPS2907A-TA(RANGE:200-300)
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JCET Group
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PNP transistor in TO-92 plastic package with collector current up to -600 mA, collector-emitter voltage -60 V, power dissipation 625 mW, DC current gain hFE from 78 to 300, and transition frequency 200 MHz. |
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MMBT2907A
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-23 package, complementary to MMBT2222, with -60 V collector-base and collector-emitter voltage, -600 mA collector current, 250 mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT2907A(RANGE:100-300)
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JCET Group
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MMBT2907A is a PNP transistor in SOT-23 package with -60V collector-base and collector-emitter voltage, -600mA continuous collector current, 250mW power dissipation, and DC current gain up to 300. |
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MMST2907A
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-323 surface mount package, with -60V collector-base and collector-emitter voltage, -5V emitter-base voltage, -600mA collector current, 200mW power dissipation, and DC current gain up to 300. |
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MMST2907A
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JCET Group
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PNP epitaxial planar transistor in SOT-323 package with -60 V collector-base and collector-emitter voltage, -0.6 A continuous collector current, 0.2 W power dissipation, and DC current gain up to 300. |
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PXT2907A
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JCET Group
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PNP transistor in SOT-89-3L package with -60V collector-emitter voltage, -600mA collector current, 500mW power dissipation, and 200MHz transition frequency, suitable for switching and linear amplification applications. |
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PZT2907A
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Shikues Semiconductor
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MMDT2907A
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CREATEK Microelectronics
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Dual PNP small signal transistor in SOT-363 package with -60 V collector-base and collector-emitter voltage, -600 mA collector current, 200 mW power dissipation, and DC current gain up to 300. |
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MPS2907A(RANGE:200-300)
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JCET Group
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PNP transistor in TO-92 package with -60V collector-base and collector-emitter voltage, -0.6A continuous collector current, 0.625W power dissipation, and DC current gain from 100 to 300 at -150mA collector current. |
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PXT2907A
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-89 package, with -60V collector-base and collector-emitter voltage, -600mA collector current, 500mW power dissipation, and DC current gain up to 300. |
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MMBT2907A
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Microdiode Semiconductor
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SOT-23 Plastic-Encapsulate Transistors, PNP, BASE, EMITTER, COLLECTOR. |
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MMBT2907A
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Shikues Semiconductor
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MMDT2907A
