2904 IC Search Results

2904

Abstract: st 2904 TI 2905 2905 2907 a 2907 2N2905
Contextual Info: 2N 2904 2N 2905 ¡SUS? SILICON PLANAR PNP GENERAL PURPOSE A M PLIFIER S AN D SWITCHES The 2N 2904, 2N 2905, 2N 2906 and 2N 2907 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 for 2N 2904 and 2N 2905 and in Jedec T O -1 8 (fo r 2N 2906 and 2N 2907)

ic 2904 diagram

Contextual Info: CFA0040B 2904 CFA0040B G ENERAL D ESCRIPTIO N: 2904 STATUS & SHIFT CONTROL UNIT CFA0040B is designed to be fully compatible with AM2904, the bit-slice standard part. The primary dif­ ferences are that bidirectional signals are separated into input and output signals, and that three-state out­

2904

Abstract: 2907 a 2907 2N2904 2N2907 2N2905
Contextual Info: 2N2904 2N 2905 2N 2906 SILICON PLANAR PNP GENERAL PURPOSE AM PLIFIERS AND SWITCHES The 2N 2904, 2N 2905, 2N 2906 and 2N 2907 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 fo r 2IM 2904 and 2N 2905 and in Jedec T O -1 8 (fo r 2N 2906 and; 2N 2907)

LM256A

Abstract: ir sensing circuit using LM358 lm35b LM356A LM356 LM256 transistor SMD t06 lm3s8m lm156 IC OP AMP LM358N
Contextual Info: LM158/LM 258/LM358/LM 2904 Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single

SA532D

Contextual Info: Product specification Philips Semiconductors Linear Products NE/SA/SE532/ LM158/258/358/A/2904 Low power dual operational amplifiers PIN CONFIGURATIONS DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, Internally frequency-compensated operational amplifiers Internally

8pin ic power 22E

Contextual Info: Philips Semiconductors Product specification . . . . Low power dual operational amplifiers NE/SA/SE532/ |_M158/258/358/A/2904 PIN CONFIGURATIONS DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally

SL00283

Abstract: LM358 NE532D NE532N SA532D
Contextual Info: Philips Semiconductors Product specification NE/SA/SE532/ LM158/258/358/A/2904 Low power dual operational amplifiers DESCRIPTION PIN CONFIGURATIONS The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally

74181

Abstract: LCS-A-15 8253 intel 4 bit carry select adder lifo intel 2864 carry select adder CFA0101A CFS2000A alu 74181
Contextual Info: Table of Contents - Part III The follow ing megafunctions are available for all of the Compacted A rra y " Products LCA10000, LSA1500, LCSA15 . M egafunction Name Type CFA0010A CFA0030A CFA0040A CFA0090A CFA0100A CFA0101A CFA0102A 2901 2903 2904 2909 2910

st 2904

Abstract: 2904 d CD 40168 ic 2904 2904 29B2 2904 st
Contextual Info: IC dependence of osc i11 at inq character ist ics uPD780078GC FCR4.0MC5 - S Room Temp. Udd [U] 5 itema~e uPD780078GC - 2904 FCR4.0MC5 (Fig.cTe) Vdd= 5 CUI a . UIH/UlLn CU] 8 LVJ UIH V Typical q 5 .9-5t8-5 t9- J I I I I b. U2H/U2L CU] 4 8

ic 2904

Abstract: ir 2905 2904 2N2905 2904 d 2905 2n2904 N2905 N 2904 2904 g
Contextual Info: 'W 2 N 2904- 2 N 2 9 0 4 A - 2N 29050 • 2N 2905 A Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: Verstärker und Schalter Applications: A m plifiers and switches Besondere Merkmale: Features:

2904D

Abstract: IC 2904D HJH2904D njm2904m operational amplifier 2904D HJM2904 29040 KJM2904V NJM2904 NJM2904L
Contextual Info: NJM2904 SINGLE-SUPPI Y DUAL OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE The NJM 2904 consists o f two independent, high gain, internally frequency com pensated operation am plifiers w hich w ere designed specifically to operate from a single power suppply over a wide range

2904 d

Abstract: sf 118 d
Contextual Info: IC dependence of oscillating characteristics uPD789026GB. FCR4.19MC5 - STD \ l t W IC N 0 \ ^ ». m V1H/V1L b. [VI V2H/V2L 2982 5.5, 2907 5.5, 2981 5.5, 2986 5.5, 2904 5.5 Room Temp. Vdd CV] 5 c. CMHz] 4. CuS] «. item a«*e m f. [V] g. CV] Fosc TrUe Duty

ic 8255

Abstract: PIA 8255 2904 8255 PIa
Contextual Info: IC dependence of oscillating characteristics uPO789026GB, FCR6.0MC5 - STD Room Temp. Vdd CV] 5 item a~e UPD789026GB. - 2904 FCR6.0MC5 Ta- 20 Cdeg] 7 5 3 a. V1H/V1L CV3 0- 0 Typical »— Worst 1 -1 7 5 3 1 -1 .5 .3 m • .1 -.1 m -.5 • -.3 400 300 bi

yx 801

Abstract: yx 801 led yx 801 ic AM2904 SI03L EZ 708 EZ 308 msr 206 pinout basic block diagram of bit slice processors 29203
Contextual Info: Am 2904 X C Status and Shift Control Unit > 3 lv> DISTINCTIVE CHARACTERISTICS <0 R ep laces m ost MSI used aro und any ALU - Including th e Am 2901, Am 2903A, A m 29203 and MSI ALUs. G e n e ra tes C arry-in to th e ALU - Carry signal is selectable from 7 diffe re nt sources.

2N 3495

Abstract: 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PINT TRANSISTOR TO-5/TO205AD/TO-39 PACKAG E D E V IC E T Y PE VcEO sus VOLTS Ic (m ax) AM PS TO -5 T O 205A D 2N 1132A 40 0.6 2N 2800 35 2N 2904 i T O -39 fn ^FE @ V V CE m in/m ax @ m A /V VcE(sat) @ I c/I b V @ m A /m A

ic 2904

Abstract: N2905
Contextual Info: 2SC T> m 023SbOS 00040=52 'î « S I E G “ _ / ~ + 7 *'/7 2 N 2904 2 N 2905 PNP Silicon Planar Transistors - SIEMENS AKTIENGESELLSCHAF - 2 N 2 9 0 4 and 2 N 2 9 0 5 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistors are

2N2219

Abstract: 2N2218 2N2219A 2N2218A 2219a 2n22191 F2N2219 2n 2219 NPN 2N 2219 2218A
Contextual Info: NPN SILICON TRANSISTORS, EPITAXIAL PLANAR *2 N T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X 2 2 1 9 ’A Compì, of 2N 2904, A - 2905, A Preferred device D isp o sitif recommandé - LF or HF small or large signal amplification A m p lific a tio n B F o u H F p e tits ou grands signaux

bc 192

Abstract: BSX41 2904 BSW72 2905 2907 BSX40 N2905 BSW75
Contextual Info: PNP Silicon Transistors PNP Silicon Epitaxial Planar Transistors lc = 500m A in T O -1 8 and T O -3 9 ( « T O - 5 ) metal ca s e s for high speed sw itch ing Type M a x im u m R a t in g s C h a r a c t e r is t ic s a t T amb = 25 ° C E J3 li h-°

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V

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SENSITRON
SEMICONDUCTOR

Technical
Data Data Sheet
2904, Rev. A







  




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TRANSISTOR BC 313

Abstract: npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 BSW21 2n 2222 transistor bc 107 transistor BCY 107 2907 pnp transistor
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r M ETAL-CASE/ BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC EO ^ \^ PNP PNP

2N 2905a pnp transistor

Abstract: 2904 st 2904 2N2905 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A
Contextual Info: PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL * 2 N 2 9 0 5 , A Compì, of 2N 2218, A and 2N 2219, A ïfc Preferred device D is p o s itif recommandé • LF or HF amplification A m p lifica tio n BF ou H F v CEO

coto 2911

Abstract: 5v 10mA reed relay COTO 2900 2904 5V reed relay DIODE 1N4002 relay diode zener 1n4002 1N4002
Contextual Info: 2900 Series/Microminiature Reed Relays M ICROMINIATURE REED RELAYS Ideally suited to the needs of Automated Test Equipment and RF requirements. The specification tables allow you to select the appropriate relay for your particular application. Slightly larger than the 2200

c2259

Abstract: w188 N2905
Contextual Info: 2SC D • fl23SbOS QQOMÔ^q 2 ■ SIEû PNP Silicon Planar Transistors 2 N 290 4 A 2 N 2905 A SIEMENS AKTIEN6ESELLSCHAF 2 N 2 9 0 4 A and 2 N 2 9 0 5 A are epitaxial PNP silicon planar transistors in TO 3 9 case 5 C 3 DIN 41 87 3 . The collector is electrically connected to the case. The transistors are