29 AMP Search Results

408-153819

Abstract: 57-40240-16
Contextual Info: Amphenol miniature-ribbon connectors 57, 157, 57LE series part number/page number index Part Number Page 34-0788-04 .29 34-1120 . 29 41-0333-03 .29

157-79500-01

Contextual Info: 57, 157, 57LE series Amphenol miniature-ribbon connectors part number/page number index Part Number Page 34-0788-04 . 29 34-1120 .29 41-0333-03 . 29

s16 transistor

Contextual Info: JXWBLA-T-10-500-29-S16 10~500MHz Low Noise Amplifier Test report is for reference only. TEST REPORT for JXWBLA-T-10-500-29-S16 Page 1 JXWBLA-T-10-500-29-S16 10~500MHz Low Noise Amplifier Technical Specification Frequency Range MHz 10-500 Gain(dB) 29 Typ.

993 395 pnp npn

Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10

LM112

Contextual Info: MILITARY DATA SHEET Original Creation Date: 06/29/95 Last Update Date: 06/29/95 Last Major Revision Date: 06/29/95 MNLM112-X REV 0AL OPERATIONAL AMPLIFIER Industry Part Number NS Part Numbers LM112 LM112H/883 Prime Die LM112 Processing Subgrp Description MIL-STD-883, Method 5004

LM48511

Abstract: National Semiconductor Audio Handbook class d amplifier theory bipole EMC for PCB Layout radar modulator board spread spectrum D Amplifier Signal Path Designer Seminar national semiconductor
Contextual Info: 8/29/2007 Reducing EMI in Class D Audio Applications The Basics 1 1 8/29/2007 Reducing EMI in Class D Audio Applications: The Basics Bill McCulley Sr. Tech Marketing Engineer Americas Audio & LV/LP Amps 2 2 8/29/2007 Outline • What is EMI? • The Class D Amplifer and EMI

xc3s500e vq100

Abstract: m1l43 XC3S250E TQ144 STARTER KIT BOARD XC3S500EVQ100 Xilinx Parallel Cable IV spartan-3 XC3S500E-VQ100 SPARTAN 3e 1600e XC3S250E vqg100 XC3S500E FGG320
Contextual Info: PRODUCT NOT RECOMMENDED FOR NEW DESIGNS 1 Spartan-3E FPGA Family Data Sheet DS312 October 29, 2012 Product Specification Module 1: Introduction and Ordering Information Module 3: DC and Switching Characteristics DS312 4.0 October 29, 2012 DS312 (4.0) October 29, 2012

P621 1k

Abstract: UL1557 HCPL4504 AC200V AC2500 P610 P621 6MBP75RTJ060 p621 b transistor p621
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP75RTJ060 Spec. No. : MS6M 0673 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0673 a 1 22 H04-004-07 Revised Records Date

P621

Abstract: P621 1k AC200V AC2500 HCPL4504 P610 all transistor P621 6MBP50
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP50RTJ060 Spec. No. : MS6M 0671 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0671 a 1 22 H04-004-07 Revised Records Date

6MBP150RTJ060

Abstract: AC200V AC2500 HCPL4504 P610 P621 6mbp150 all transistor P621 P621 ic
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP150RTJ060 Spec. No. : MS6M 0677 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0677 a 1 22 H04-004-07 Revised Records Date

P621

Abstract: IC P621 p621 b 18 p621 P621 capacitor 6MBP100RTJ060 AC200V AC2500 HCPL4504 P610
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP100RTJ060 Spec. No. : MS6M 0675 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘0 3 N.Matsuda Jan. 29 ‘0 3 Nishiura Jan.-29 -‘0 3 K.Yamada T.Fujihira MS6M 0675 a 1 22 H04-004-07 Revised Records

P621

Abstract: 431w transistor P621 capacitor 431W p621 b 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP150RTJ060 Spec. No. : MS6M 0677 Fuji Electric Co.,Ltd. Matsumoto Factory Jan.29 ‘ 03 N.Matsuda Jan.29 ‘ 03 Nishiura Jan. 29‘ 03 K.Yamada T.Fujihira MS6M 0677 a 1 22 H04-004-07 Revised Records Date

Contextual Info: TriQuint SEMICONDUCTOR, Advance Product Information 26-29 GHz Medium Power Amplifier Key Features and Performance TGA1081-EPU Primary Applications Production version of TGA9058 0.25um pHEMT Technology 26 GHz - 29 GHz Frequency Range Nominal Pout 22dBm @ 1dB GC

Contextual Info: 1 12-0CT-99 09:49:29 amp02644 /home/amp02644/edmmod

TGA1081-EPU

Contextual Info: TriQuint % SEMICONDUCTOR*. Advance Product Information 26-29 GHz Medium Power Amplifier Key Features and Performance Primary Applications Production version of TGA9058 0.25um pHEMT Technology 26 GHz - 29 GHz Frequency Range Nominal Pout 22dBm @ 1dB GC Nominal SS Gain 24dB

SMD MARKING CODE f2

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: TrìQuint m Advance Product Information SEMICONDUCTOR, 26-29 GHz Intermediate Power Amplifier Key Features and Performance TGA9058A-EPU Primary Applications 0.25um pHEMT Technology LMDS 26GHz - 29 GHz Frequency Range Point-to-Point Radio Nominal Pout 23dBm @ 2dB GC

Contextual Info: D38999/29 & D38999/30 TV Breakaway Fail Safe – crimp, metal lanyard release plug Part number reference. See how to order, pages 29, 30 to complete. D38999/29 Pins Only D38999/30 (Sockets Only) 88-5565XX-XX 91-5565XX-XX .374 MAX 9.50 MAX OUTER SLEEVE MOVEMENT

2929 transistor

Abstract: MMBT6427 MMBTA14 SOT-23 J
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage

Logic Selection Guide

Abstract: voltage level translators gates BCM 7425 CMOS TTL Logic Family Specifications TTL LS 7407 TTL family CD4010 circuit pin configuration ttl to cmos converter bi-directional switches IGBT
Contextual Info: LogicGuide-08 5/28/08 10:29 AM Page 1 Logic SELECTION GUIDE LogicGuide-08 5/28/08 10:29 AM Page 2 LogicGuide-08 5/28/08 10:29 AM Page 3 Logic SELECTION GUIDE Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers

gain chip

Contextual Info: TriQuint <+ Advance Product Information SEMICONDUCTOR 26-29 GHz Intermediate Power Amplifier Key Features and Performance 0.25um pHEMT Technology 26GHz - 29 GHz Frequency Range Nominal Pout 23dBm @ 2dB GC Nominal SS Gain 25dB 5 V Bias TGA9058A-EPU Primary Applications

Contextual Info: TrìQuint SEMICONDUCTOR Advance Product Information Ka Band Power Amplifier TGA1055-EPU Key Features and Performance Primary Applications 0.25um pHEMT Technology LMDS 26.5 - 29 GHz Frequency Range 2W Nominal Pout at 29 GHz Point-to-Point Radio 20 Nominal Gain

LNA marking CODE R0

Contextual Info: BGA715N7 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 1.0, 2013-01-29 Preliminary RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG

TGA9058

Abstract: 8504 TGA1081 TGA1081-EPU
Contextual Info: Advance Product Information 26-29 GHz Medium Power Amplifier Key Features and Performance • • • • • • TGA1081-EPU Primary Applications Production version of TGA9058 0.25um pHEMT Technology 26 GHz - 29 GHz Frequency Range Nominal Pout 22dBm @ 1dB GC