29 AMP Search Results

Contextual Info: TriQuint SEMICONDUCTOR, Advance Product Information 26-29 GHz Medium Power Amplifier Key Features and Performance TGA1081-EPU Primary Applications Production version of TGA9058 0.25um pHEMT Technology 26 GHz - 29 GHz Frequency Range Nominal Pout 22dBm @ 1dB GC

TGA1081-EPU

Contextual Info: TriQuint % SEMICONDUCTOR*. Advance Product Information 26-29 GHz Medium Power Amplifier Key Features and Performance Primary Applications Production version of TGA9058 0.25um pHEMT Technology 26 GHz - 29 GHz Frequency Range Nominal Pout 22dBm @ 1dB GC Nominal SS Gain 24dB

SMD MARKING CODE f2

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

gain chip

Contextual Info: TriQuint <+ Advance Product Information SEMICONDUCTOR 26-29 GHz Intermediate Power Amplifier Key Features and Performance 0.25um pHEMT Technology 26GHz - 29 GHz Frequency Range Nominal Pout 23dBm @ 2dB GC Nominal SS Gain 25dB 5 V Bias TGA9058A-EPU Primary Applications

mitsubishi APD

Abstract: photodiode Avalanche photodiode FU-321SPA-7 FU-321SPA-V7 FU-321SPA-W7 STM-64 avalanche photodiode 10Gbps
Contextual Info: TZ7-02-053 Rev.A 1/5 29.Jan.2002 Approved Charged Approved Customer Approval Specification for 10Gb/s APD and Preamp module FU-321SPA-*7 A B x Date 29.Jan.’02 MITSUBISHI ELECTRIC.CORP. C D Approved T.Nambara TZ7-02-053 Rev.A (2/5) 29.Jan.2002 MITSUBISHI (OPTICAL DEVICES)

FU-321SPP-7

Abstract: FU-321SPP-V7 FU-321SPP-W7 STM-64 mitsubishi fu ber
Contextual Info: TZ7-02-052 Rev.A 1/5 29.Jan.2002 Approved Charged Approved Customer Approval Specification for 10Gb/s PIN PD and Preamp module FU-321SPP-*7 A B x Date 29.Jan.’02 MITSUBISHI ELECTRIC.CORP. C D Approved T.Nambara TZ7-02-052 Rev.A(2/5) 29.Jan.2002 MITSUBISHI (OPTICAL DEVICES)

TriQuint

Abstract: 8504
Contextual Info: Advance Product Information 26-29 GHz Intermediate Power Amplifier Key Features and Performance • • • • • TGA9058A-EPU Primary Applications 0.25um pHEMT Technology 26GHz - 29 GHz Frequency Range Nominal Pout 23dBm @ 2dB GC Nominal SS Gain 25dB 5 V Bias

FC400R1-29

Abstract: FLTR100V10
Contextual Info: Data Sheet June 07, 2004 DS04-017 ver. 1.0 Replaces: DS00-330EPS PDF Name: fc400r1-29.pdf FC400R1-29 Power Module; dc-dc Converter: 18 Vdc to 36 Vdc Input, 28 Vdc Output; 400 W Features The FC400R1-29 Power Module uses advanced, surfacemount technology and delivers high-quality, compact, dc-dc

14141

Abstract: CD005 1160E
Contextual Info: TriQuint <+ Advance Product Information SEMiÇONDUC TOR 23 - 29 GHz High Power Amplifier TGA9070-EPU Key Features and Performance 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 W att 28GHz @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA

Contextual Info: MOTOROLA Order this document by MHW7292/D SEMICONDUCTOR TECHNICAL DATA The RF Line 110-Channel 750 MHz CATV Line Extender Amplifier MHW7292 • Specified for 110–Channel Performance • Broadband Power Gain  @ f = 40 – 750 MHz Gp = 29 dB (Typ) 29 dB GAIN

voltage regulators

Abstract: regulators Positive Voltage Regulators semtech "Positive Voltage Regulators"
Contextual Info: 5 AMP POSITIVE VOLTAGE REGULATORS January 29, 1998 1997 SEMTECH CORP. LAS 1900 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 5 AMP POSITIVE VOLTAGE REGULATORS LAS 1900 January 29, 1998 © 1997 SEMTECH CORP.

1233 1638

Contextual Info: Mini-Circuits - Specification for Amplifier - GALI-29 Amplifier print this page GALI-29 Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz 3 DC Power Output Input NF 1 dB Min. (no dB Comp. damage) Typ. IP3 dBm Typ. DC-7000 12.70 +11.20 +10.00 +15.00

CTB128

Abstract: MHW8292 XMD128
Contextual Info: MOTOROLA Order this document by MHW8292/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel 860 MHz CATV Line Extender Amplifier MHW8292 • Specified for 128–Channel Performance • Broadband Power Gain  @ f = 40–860 MHz Gp = 29 dB (Typ) 29 dB GAIN

Contextual Info: MOTOROLA Order this document by MHW8292/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel 860 MHz CATV Line Extender Amplifier MHW8292 • Specified for 128–Channel Performance • Broadband Power Gain  @ f = 40–860 MHz Gp = 29 dB (Typ) 29 dB GAIN

UMTS qualcomm

Abstract: AWT6272R AWT6272RM20P8
Contextual Info: AWT6272R TM HELP Cellular/WCDMA 3.4 V/29 dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 44 % @ POUT = +29 dBm 20 % @ POUT = +16 dBm AWT6272R 15 % @ POUT = +7 dBm • Low Quiescent Current: 16 mA

schematic induction heating

Abstract: 3 phase mosfet MSK4401 3 phase mosfet drive schematic 29 amp
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE 4401 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 75 Volt Motor Supply Voltage 29 Amp Output Switch Capability, All N-Channel MOSFET Output Bridge

TGA9070

Abstract: TGA9070-EPU
Contextual Info: Advance Product Information TGA9070-EPU 23 GHz to 29 GHz High-Power Amplifier Key Features and Performance Primary Applications • • • • • • LMDS • Point-to-Point Radio 0.25um pHEMT technology 23 GHz to 29 GHz frequency range Nominal Pout of 1 watt 28GHz

PT100 AD620

Abstract: EcG ad620 rg 511 AD620 AD620 ecg AD620* PT100 INA128 INA128P INA128PA INA129
Contextual Info: INA1 28 INA128 INA129 INA1 29 INA1 28 INA1 29 Precision, Low Power INSTRUMENTATION AMPLIFIERS FEATURES DESCRIPTION ● LOW OFFSET VOLTAGE: 50µV max The INA128 and INA129 are low power, general purpose instrumentation amplifiers offering excellent accuracy. Their versatile 3-op amp design and small

k143

Abstract: TSV622AILT st k136 TSSOP14 TSSOP16 TSSOP-16 TSV624A Mini-SO10 K144 K136
Contextual Info: TSV62x, TSV62xA Rail-to-rail input/output 29 µA 420 kHz CMOS operational amplifiers Features • Rail-to-rail input and output ■ Low power consumption: 29 µA typ, 36 µA max ■ Low supply voltage: 1.5 – 5.5 V ■ Gain bandwidth product: 420 kHz typ

4707 N Channel MOSFETs

Abstract: 3 phase AC servo drive schematic amp mosfet schematic circuit MSK4401D MSK4401G MSK4401S MSK4401U
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE 4401 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 75 Volt Motor Supply Voltage 29 Amp Output Switch Capability, All N-Channel MOSFET Output Bridge

GALI-39

Contextual Info: MMIC Amplifier GALI-39 Typical Performance Curves OUTPUT IP-3 vs. TEMPERATURE OUTPUT IP-3 vs. CURRENT 29 29 -45°C 28 28 28mA 27 35mA 26 26 42mA 25 25 +25°C 27 +85°C dBm (dBm) INPUT POWER = -25dBm, Temperature = +25°C INPUT POWER = -25dBm, CURRENT = 35mA

Contextual Info: MMIC Amplifier MAR-8ASM+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -30dBm, Temperature = +25°C INPUT POWER = -30dBm, CURRENT = 36mA 33 33 32 - 45°C 32 29mA 31 +25°C 31 36mA 30 +85°C 30 43mA 29 dB (dB) 29 28 28 27

MAR-8A

Contextual Info: MMIC Amplifier MAR-8A+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -30dBm, Temperature = +25°C INPUT POWER = -30dBm, CURRENT = 36mA 33 33 32 - 45°C 32 29mA 31 +25°C 31 36mA 30 +85°C 30 43mA 29 dB (dB) 29 28 28 27

fire alarms using ic 555

Abstract: burglar alarms using ic 555
Contextual Info: DATE DRAWN Jul.-29-'05 CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used