28MAY02 Search Results

Contextual Info: r' 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2001 3 RELEASED EOR PUBLICATION OCT ,2001. LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. '“I 2 DIST / I J K — CHAMLEK -\ REVISIONS P LTR D - DESCRIPTION REVISED DATE ECR — 06 — 0 2 4 6 4 2

Si2311DS

Contextual Info: SPICE Device Model Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range