28DIP400 Search Results
28DIP400 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
KM641001Contextual Info: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words |
OCR Scan |
km641001256kx576-bitkm641001-20+2 | |
KM641001Contextual Info: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : KM641001 -20 :1 50mA (max.) KM641001 -25 : 130mA (max.) |
OCR Scan |
km641001130makm641001-35110ma+4 | |
KM641001
Abstract: KM641001-25 km641001j KM641001-35 741-145
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OCR Scan |
km641001150makm641001-25130ma+6 | |
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Contextual Info: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL) |
OCR Scan |
km641001576-bit | |
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Contextual Info: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20,25, 35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) :2mA (max) Operating : KM641001-20 : 150mA (max.) KM641001-25: 130mA (max.) |
OCR Scan |
km641001km641001-20150makm641001-25+6 | |
KM641001Contextual Info: KM641001 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access M em ory organized as 262,144 words Standby (TTL) |
OCR Scan |
km641001km641001p28-dip-400km641001j+2 | |
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Contextual Info: KM641001/L CMOSSRAM 256K X 4 Bit with OE High-Speed CMOS Static RAM FEATURES Fast Access Time 20,25,35ns(Max.) Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 2mA(Max.) 0.5mA(Max.) - L-Ver. only Operating KM641001/L - 20 : 150mA(Max.) KM641001/L - 25 : 130mA(Max.) |
OCR Scan |
km641001/l150ma130ma110ma+3 | |
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Contextual Info: KM611001/L CMOS SRAM 1M x 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L -20 : 130 mA(Max.) |
Original |
km611001/lkm611001p/lp28-dip-400km611001j/lj+2 | |
KM641001-20
Abstract: KM641001-25 km641001 TAE 1102 KM641001-35 KM641001P d02144
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OCR Scan |
km641001256kxkm641001-20km641001-25+6 | |
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Contextual Info: KM681001/L CMOSSRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES Fast A ccess Tim e 20 ,25,35 ns M a x. Low P ow er D issipation S tan dby (TTL) : 40m A (M ax.) (C M O S) : 2m A (M ax.) 0.5 m A (M a x.) - L-Ver. only O pe ra ting K M 68 10 01 /L - 20 : 170m A (M ax.) |
OCR Scan |
km681001/l32-soj-4qomarch-199728-dip-400+1 | |
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Contextual Info: KM611001/L CMOS SRAM 1M X 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS): 2mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L-20:130 mA(Max.) KM611001/L-25:110 mA(Max.) |
OCR Scan |
km611001/lkm611001/l-20km611001/l-25km611001/l-3+5 | |
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Contextual Info: KM611001 CMOS SRAM 1M x1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. (CMOS): 2 mA(Max.) Operating KM611001-20 : 130 mA(Max.) The KM611001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 1.048,576 words |
OCR Scan |
km611001km611001-20576-bitkm611001-35 |