28DIP400 Search Results

28DIP400 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
KM641001 Contextual Info: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words	OCR Scan	KM641001 256Kx KM641001 576-bit KM641001-20 KM641001-25: 130mA	PDF
KM641001 Contextual Info: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : KM641001 -20 :1 50mA (max.) KM641001 -25 : 130mA (max.)	OCR Scan	KM641001 KM641001 130mA KM641001-35: 110mA KM641001P 28-DIP-400 KM641001J 28-SQJ-400	PDF
KM641001 Abstract: KM641001-25 km641001j KM641001-35 741-145 Contextual Info: CM O S SRAM KM 641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s T im e : 2 0 ,2 5 ,35ns max. • L o w P o w e r D issipation S tand by (TTL) : 40m A (max.) (CMOS) : 2m A (max) O pe rating : KM641001 -20 : 150m A (max.)	OCR Scan	KM641001 KM641001 150mA KM641001-25 130mA KM641001-35 110mA KM641001P 28-DIP-400 KM641001J km641001j 741-145	PDF
Contextual Info: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)	OCR Scan	KM641001 KM641001 576-bit	PDF
Contextual Info: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20,25, 35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) :2mA (max) Operating : KM641001-20 : 150mA (max.) KM641001-25: 130mA (max.)	OCR Scan	KM641001 KM641001-20 150mA KM641001-25: 130mA KM641001-35: 110mA KM641001P 28-DIP-400 KM641001J	PDF
KM641001 Contextual Info: KM641001 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access M em ory organized as 262,144 words Standby (TTL)	OCR Scan	KM641001 KM641001P: 28-DIP-400 KM641001J: 28-SOJ-4QOB KM641001 576-bit	PDF
Contextual Info: KM641001/L CMOSSRAM 256K X 4 Bit with OE High-Speed CMOS Static RAM FEATURES Fast Access Time 20,25,35ns(Max.) Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 2mA(Max.) 0.5mA(Max.) - L-Ver. only Operating KM641001/L - 20 : 150mA(Max.) KM641001/L - 25 : 130mA(Max.)	OCR Scan	KM641001/L KM641001/L 150mA 130mA 110mA KM641001/LP 28-DIP-400 KM641001/LJ	PDF
Contextual Info: KM611001/L CMOS SRAM 1M x 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L -20 : 130 mA(Max.)	Original	KM611001/L KM611001/L KM611001P/LP 28-DIP-400 KM611001J/LJ 28-SOJ-400A 576-bit	PDF
KM641001-20 Abstract: KM641001-25 km641001 TAE 1102 KM641001-35 KM641001P d02144 Contextual Info: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation	OCR Scan	KM641001 256Kx KM641001-20 KM641001-25 KM641001-35 KM641001P: 28-DIP-400 KM641001 28-SOJ-400B KM641001-20 KM641001-25 TAE 1102 KM641001-35 KM641001P d02144	PDF
Contextual Info: KM681001/L CMOSSRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES Fast A ccess Tim e 20 ,25,35 ns M a x. Low P ow er D issipation S tan dby (TTL) : 40m A (M ax.) (C M O S) : 2m A (M ax.) 0.5 m A (M a x.) - L-Ver. only O pe ra ting K M 68 10 01 /L - 20 : 170m A (M ax.)	OCR Scan	KM681001/L 32-SOJ-4QO March-1997 28-DIP-400 32-SOJ-400	PDF
Contextual Info: KM611001/L CMOS SRAM 1M X 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS): 2mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L-20:130 mA(Max.) KM611001/L-25:110 mA(Max.)	OCR Scan	KM611001/L KM611001/L-20 KM611001/L-25 KM611001/L-3 100mA KM611001P/LP: 28-DIP-400 KM611001J/LJ: 28-SQJ-400A KM611001/L	PDF
Contextual Info: KM611001 CMOS SRAM 1M x1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. (CMOS): 2 mA(Max.) Operating KM611001-20 : 130 mA(Max.) The KM611001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 1.048,576 words	OCR Scan	KM611001 KM611001-20 KM611001 576-bit KM611001-35	PDF