28 PAD LEADLESS Search Results

M8254

Contextual Info: in t e i M8254 PROGRAMMABLE INTERVAL TIMER Military • Compatible with M8080A, M8085AH, M6086, M8088 and M80186 ■ Handles Inputs from DC to 8 MHz ■ Six Programmable Counter Modes ■ Status Read-Back Command ■ Available in 24-Pin Cerdip and 28-Pad LCC Packages

MIL-STD-1835 CQCC1-N28

Abstract: clcc 68 CQCC1-N28 CERAMIC LEADLESS CHIP CARRIER CERAMIC LEADLESS CHIP CARRIER 68 datasheet d 442 CERAMIC LEADLESS CHIP CARRIER CLCC 28
Contextual Info: Hermetic Packages for Integrated Circuits Ceramic Leadless Chip Carrier Packages CLCC J28.A MIL-STD-1835 CQCC1-N28 (C-4) 28 PAD CERAMIC LEADLESS CHIP CARRIER PACKAGE 0.010 S E H S D INCHES D3 j x 45o E3 B E h x 45o 0.010 S E F S A A1 PLANE 2 PLANE 1 -E-

Contextual Info: Features • Bipolar Speed in JEDEC Standard EPROM Pinout Read Access Time • 55ns 28-Lead 600 mil CERDIP and OTP Plastic DIP 32-Pad LCC, JLCC and OTP PLCC • Low Power CMOS Operation 100 jiA max. Standby 50 mA max. Active at 10 MHz • High Output Drive Capability

AT27C512R-15DC

Abstract: AT-27C512R-12LM
Contextual Info: AT27C512R Features • Fast Head Access Time - 90 ns • Low Power CMOS Operation 100 jiA max. Standby 20 mA max. Active at 5 MHz • Wide Selection of JEDEC Standard Packages 28-Lead 600-mil Cerdlp and OTP Plastic DIP, SOIC, or TSOP 32-Pad LCC, 32-Lead JLCC and OTP PLCC

Contextual Info: MOSAIC SEMICONDUCTOR INC 4SE 1335337=1 OOOObSb 0 D MOC T -4 & -H 3 -/V 32K X 8 SRAM MSM832U-45/55/70 Issue 3.2 : December 1991 ' Pi n Definitions 32,768 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 45/55/70 ns. Ultra Low Power Device Standard 28 pin DIL/ 32 pad LCC footprint.

ntlms4504n

Contextual Info: NTLMS4504N Advance Information Power MOSFET 28 A, 24 V N–Channel SO–8 Leadless The SO–8LL Leadless package uses the power QFN package technology. It’s footprint matches that of the standard SO–8 single die device. This Leadless SO–8 package provides low parasitic

Contextual Info: TQM879008 1.5-2.7 GHz ½ W Digital Variable Gain Amplifier Applications 3G / 4G Wireless Infrastructure CDMA, WCDMA, LTE Repeaters ISM Infrastructure 28-pin 6x6 mm leadless SMT package 22 NC 23 GND 24 GND 25 GND Vcc_ SPI 1.5-2.7 GHz Frequency Range 41.1 dB Maximum Gain at 2.5 GHz

200123K

Abstract: QFN 88 land pattern LGA-28 land pattern SOIC 8 pcb pattern
Contextual Info: APPLICATION NOTE Suggested PCB Land Pattern Designs for Leaded and Leadless Packages, and Surface Mount Guidelines for Leadless Packages Introduction Surface Mount Guidelines for Leadless Packages This Application Note provides sample PCB land pattern dimensions for a variety of leaded and leadless packages. These

Contextual Info: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: TQM829007 0.6-1.0 GHz ¼ W Digital Variable Gain Amplifier Applications 3G / 4G Wireless Infrastructure CDMA, WCDMA, LTE Repeaters ISM Infrastructure 28-pin 6x6 mm leadless SMT package 22 NC 23 GND 24 GND LE 1 21 GND S P I DATA 2 20 GND DSA CLK 3 Matching

Contextual Info: MPS-182217-02 Linear Amplifier 1800 to 2200 MHz ! IP3: 45 dBm ! P1dB: 28.5 dBm Model #: MPS-182217-02 Features ! ! ! ! Leadless Chip Carrier +45 dBm IP3 +28.5 dBm P1dB 14 dB Gain ! Single Positive Bias ! Systems applications for this device are: CDMA, TDMA,

Contextual Info: MPS-090917P-02 920 to 965 MHz Linear Amplifier Preliminary Data Sheet Features: MP S -0 909 1.1 dB NF +44 dBm IP3 14.5 dB Gain 17P -02 +28 dBm P1dB Single Positive Bias Leadless Surface Mount Package The MPS-090917P-02 is a low cost high linearity modular amplifier designed to meet the

smd code marking A8

Abstract: WS27C256L WS27C256L-12 WS27C256L-12CMB WS27C256L-12DMB WS27C256L-12TMB WS27C256L-15 WS27C256L-15DMB WS27C256L-15TMB WS27C256L-20
Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP — Latch-Up Immunity to 200 mA

WS27C256L

Abstract: capacitor, 1000 microfarad and 35 volts WS27C256L-12 WS27C256L-12CMB WS27C256L-12DMB WS27C256L-12TMB WS27C256L-15 WS27C256L-15DMB WS27C256L-15TMB WS27C256L-20
Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP — Latch-Up Immunity to 200 mA

N4000-13

Abstract: Nelco 4000-13
Contextual Info: TQM8M9076 0.05-4 GHz Digital Variable Gain Amplifier Applications 32-pin 5x5mm leadless SMT package The TQM8M9076 integrates a high performance digital step attenuator followed by a high linearity, broadband gain block. The input and output of the individual stages are

OFDM transceiver 800mhz

Contextual Info: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure

ofdm transceiver 900mhz

Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
Contextual Info: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure

c1237c

Abstract: transistor c1222 2100 mhz rf power amplifier circuit diagram C1237 D822 transistor C1222 CX65102 CX65102-11 D825 TW10
Contextual Info: CX65102 1700 – 2200 MHz Linear Power Amplifier Skyworks’ CX65102 power amplifier is a fully matched 6-pin Leadless Chip Carrier LCC surface mount module, developed for Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. This small, power-efficient

PCB Rogers RO4003

Abstract: AN0005 CHA2098RBF RO4003 VD35
Contextual Info: CHA2098RBF 20-33GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications,

AN0005

Abstract: CHA5390TBF RO4003 PCB Rogers RO4003 substrate microwave IC 24-30GHz
Contextual Info: CHA5390TBF 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,

TQM8M9075

Contextual Info: TQM8M9075 0.05-4 GHz Digital Variable Gain Amplifier Applications • • • • Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio General Purpose Wireless 32-pin 5x5mm leadless SMT package Product Features • • • • • • • •

TQM879008

Contextual Info: TQM879008 1.5-2.7GHz ½ W Digital Variable Gain Amplifier Applications •   3G / 4G Wireless Infrastructure CDMA, WCDMA, LTE Repeaters 28-pin 6x6mm leadless SMT package 22 NC 23 GND 24 GND 25 GND 26 GND 27 GND 1.5-2.7 GHz Frequency Range 41.1 dB Maximum Gain at 2.5 GHz

tqm879008

Contextual Info: TQM879008 1.5-2.7GHz ½ W Digital Variable Gain Amplifier Applications •   3G / 4G Wireless Infrastructure CDMA, WCDMA, LTE Repeaters 28-pin 6x6mm leadless SMT package 22 NC 23 GND 24 GND 25 GND 26 GND 27 GND 1.5-2.7 GHz Frequency Range 41.1 dB Maximum Gain at 2.5 GHz

NTLMS4505N

Abstract: 4392 MOSFET
Contextual Info: NTLMS4505N Advance Information Power MOSFET 31 A, 24 V N–Channel SO–8 Leadless The SO–8LL Leadless package uses the power QFN package technology. It’s footprint matches that of the standard SO–8 single die device. This Leadless SO–8 package provides low parasitic