28/U/25/20/POWER AMPLIFIER 12 GHZ Search Results

28/U/25/20/power amplifier 12 GHZ

Contextual Info: HMC-C057 v03.0709 D E U N I T N O T C C S U I D D O PR 1 AMPLIFIERS WIDEBAND POWER AMPLIFIER MODULE, 0.01 - 20 GHz Features Gain: 12 dB P1dB Output Power: +28 dBm Regulated Supply and Bias Sequencing ns g i s De Hermetically Sealed Module Typical Applications

Contextual Info: HMC268LM1 v03.1201 D E U N I T N O T C C S U I D D O PR MICROWAVE CORPORATION SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz AMPLIFIERS - SMT 1 Typical Applications Features The HMC268LM1 LNA enables economical PCB SMT assembly for: SMT mmWave Package • Millimeterwave Point-to-Point Radios

HMC283LM1

Abstract: 27 - 33 GHz GaAs Tripler MMIC gaas amplifier
Contextual Info: HMC283LM1 MICROWAVE CORPORATION SMT MEDIUM POWER GaAs AMPLIFIER 17 - 40 GHz V02.1100 FEBRUARY 2001 General Description SMT mmWAVE PACKAGE The HMC283LM1 is a Medium Power Amplifier MPA in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband

Contextual Info: HMC261LM1 v03.1201 D E U N I T N O T C C S U I D D O PR MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER, 20 - 32 GHz 1 Typical Applications Features The packaged HMC261LM1 amplifier enables economical PCB SMT assembly for: SMT mmWave Package 13 dB Gain

amplifier TRANSISTOR 12 GHZ

Abstract: smt transistor HMC407MS8G
Contextual Info: HMC407MS8G v00.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 5.0 - 7.0 GHz applications: Gain: 15 dB • UNII 28% PAE

HMC414MS8G

Contextual Info: HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE

Contextual Info: HMC414MS8G v00.0901 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB Saturated Power: +30 dBm

Contextual Info: HMC407MS8G v00.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 5.0 - 7.0 GHz applications: Gain: 15 dB Saturated Power: +29 dBm

Contextual Info: HMC283 v03.1007 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC283 is ideal for: High Gain: 21 dB • Millimeterwave Point-to-Point Radios Psat Output Power: +21 dBm

FMM5056

Abstract: FMM5056X ED-4701 eudyna an
Contextual Info: Preliminary FMM5056X 5.8-7.2GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 28.0dB(typ.) ・Frequency Band: 5.8 - 7.2 GHz ・Broad Band: 5.8～7.2GHz ・Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5056X is a MMIC amplifier that contains a four-stage

HMC413QS16G

Abstract: Rogers 4350
Contextual Info: HMC413QS16G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.7 - 2.3 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power/driver amplifier for 1.7 - 2.3 GHz applications: Gain: 22 dB • Cellular

hmc413qs16g

Contextual Info: HMC413QS16G v00.0901 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.7 - 2.3 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 1.7 - 2.3 GHz applications: Gain: 22 dB Saturated Power: +29.5 dBm

Contextual Info: MICROWAVE HMC308 CORPORATION GENERAL PURPOSE 30 mW GaAs AMPLIFIER 1.3 - 3.0 GHz V00.0900 J UNE 2000 AMPLIFIERS 1 Features General Description P1dB Output Power: + 15 dBm @ +5V The HMC308 is a low cost MESFET MMIC amplifier that operates from a single +3 to +5V

HMC327MS8G

Abstract: power amplifier mmic design high efficiency
Contextual Info: HMC327MS8G v00.0801 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB AMPLIFIERS - SMT • Wireless Local Loop

HBT 01 - 05

Contextual Info: HMC415LP3 v00.1101 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.4 - 6.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.4 - 6.0 GHz applications: Gain: 20 dB • UNII 34% PAE • HiperLAN

12v class d amplifier 100W

Contextual Info: HMC-C008 v05.1007 AMPLIFIERS 1 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz D E U N I T N O T C C S U I D D O PR Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected

5.5 GHz power amplifier

Contextual Info: v02.0700 HMC280MS8G MICROWAVE CORPORATION GaAs MMIC POWER AMPLIFIER 5.0 - 6.0 GHz 1 Typical Applications Features The HMC280MS8G is ideal for: Psat Output Power: +24 dBm • UNII & HiperLAN Output IP3: +38 dBm High Gain: 18 dB AMPLIFIERS - SMT • ISM Single Supply: +3.6V

s3525

Contextual Info: HMC261 v01.0500 D E U N I T N O T C C S U I D D O PR MICROWAVE CORPORATION GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC261 is ideal for: Stable Gain vs. Temperature: 14dB ± 1.5dB • MMW Point-to-Point Radios

Contextual Info: HMC406MS8G v00.0801 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a driver amplifier for 5.0 - 6.0 GHz applications: Gain: 18 dB Saturated Power: +29 dBm

Contextual Info: TGA4537-SM 29 – 35 GHz 1W Power Amplifier Applications • Point-to-Point Radio • Ka-band Sat-Com 26 lead 5x5mm ACQFN package Product Features Functional Block Diagram Frequency Range: 29 – 35 GHz Power: 31 dBm Psat, 30 dBm P1dB Gain: 18 dB TOI: 39 dBm at 20 dBm/tone

Contextual Info: HMC308 v01.0701 MICROWAVE CORPORATION GENERAL PURPOSE 30 mW GaAs MMIC AMPLIFIER, 1.3 - 3.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features Broadband or Narrow Band Applications: Gain: 16 dB • DECT P1dB Output Power: +15 dBm@ +5V • PCS Single Supply: +3V or +5V

thermocouple gaas

Contextual Info: HMC283LM1 v04.1201 MICROWAVE CORPORATION SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz AMPLIFIERS - SMT 1 Typical Applications Features The HMC283LM1 is ideal for: SMT mmWave Package • Millimeterwave Point-to-Point Radios Psat Output Power: +21 dBm • LMDS

Contextual Info: HMC406MS8G v00.0801 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a driver amplifier for 5.0 - 6.0 GHz applications: Gain: 18 dB • UNII 38% PAE

Contextual Info: HMC323 v01.0701 D E U N I T N O T C C S U I D D O PR MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER, DC - 3.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features This Amplifier is ideal for RF Systems where high linearity is required such as: