27NOV2002 Search Results

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read „ ACCESS TIMES: 70, 90ns „ PROGRAMMING TIME – 10 s per Byte/Word typical „ 35 MEMORY BLOCKS

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read „ ACCESS TIMES: 70, 90ns „ PROGRAMMING TIME – 10 s per Byte/Word typical „ 35 MEMORY BLOCKS

IEC61360-4

Abstract: EIA-724
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

uPSD3200

Abstract: TQFP52 TQFP80
Contextual Info: µPSD323X Flash Programmable System Devices with 8032 Microcontroller Core and 64Kbit SRAM FEATURES SUMMARY • The µPSD323X Devices combine a Flash PSD architecture with an 8032 microcontroller core. The µPSD323X Devices of Flash PSDs feature dual banks of Flash memory, SRAM, general

M29W160ET

Abstract: M29W160E M29W160EB TFBGA48 27-Nov-2002
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY  SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read  ACCESS TIMES: 70, 90ns  PROGRAMMING TIME – 10µs per Byte/Word typical  35 MEMORY BLOCKS

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY n SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read n ACCESS TIMES: 70, 90ns n PROGRAMMING TIME – 10 s per Byte/Word typical n 35 MEMORY BLOCKS

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. “ f “ LOC DIST AF 50 ALL RIGHT5 RESERVED. REVISIONS LTR D 1, .020 C .5 1 J D T § § b 1 1 0 ± .0 Q 3 C2.79±0.08] _L_ z 10 REV PER 0 G 6 3 -0 1 3 8 - 0 2

M29W160EB

Abstract: M29W160E M29W160ET TFBGA48 2aa 555
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS

PLCC32

Abstract: TSOP32 AN1122 M29W022B M29W022BB M29W022BT
Contextual Info: M29W022BT M29W022BB 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs by Byte typical ■

M29W160E

Abstract: M29W160EB M29W160ET TFBGA48
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS