27NC Search Results

FQP11N40

Contextual Info: QFET N-CHANNEL FQP11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. • Extended Safe Operating Area

SFD30N06

Contextual Info: PRELIMINARY SFD30N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.04Ω )@VGS=10V ■ Gate Charge (Typical 27nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ { 2. Drain

Contextual Info: FDB2572 / FDP2572 N-Channel UltraFET Trench MOSFET 150V, 29A, 56mΩ Features Applications • r DS ON = 45mΩ (Typ.), VGS = 10V, ID = 9A • DC/DC converters and Off-Line UPS • Qg(tot) = 27nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

Contextual Info: SUN1060F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.)  Low gate charge: Qg=27nC (Typ.)  Low reverse transfer capacitance: Crss=4.9pF (Typ.)  RoHS compliant device

SFP30N06

Contextual Info: PRELIMINARY SFP30N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.04Ω )@VGS=10V ■ Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)

Contextual Info: QFET N-CHANNEL FQAF11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. •

Contextual Info: QFET N-CHANNEL FQA11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. • Extended Safe Operating Area

15E tube

Abstract: FDD2572 FDU2572 M063 KP25
Contextual Info: FDD2572 / FDU2572 N-Channel UltraFET Trench MOSFET 150V, 29A, 54mΩ Features Applications • r DS ON = 45mΩ (Typ.), VGS = 10V, ID = 9A • DC/DC converters and Off-Line UPS • Qg(tot) = 27nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

25OT

Abstract: FQA11N40
Contextual Info: QFET N-CHANNEL FQA11N40 FEATURES BVqss = 400V Advanced New Design R d S O N Avalanche Rugged Technology = 0.48Î2 lD = 11.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 27nC (Typ.)

FDB2572

Abstract: FDP2572
Contextual Info: FDB2572 / FDP2572 N-Channel UltraFET Trench MOSFET 150V, 29A, 54mΩ Features Applications • r DS ON = 45mΩ (Typ.), VGS = 10V, ID = 9A • DC/DC converters and Off-Line UPS • Qg(tot) = 27nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

SFP30N06

Contextual Info: SFP30N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.04Ω )@VGS=10V ■ Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) ■ ■

Contextual Info: QFET N-CHANNEL FQB11N40, FQI11N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ.

Contextual Info: QFET N-CHANNEL FQAF11N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. •

diode SM 88A

Abstract: FQAF11N40
Contextual Info: QFET N-CHANNEL FQAF11N40 FEATURES BVqss = 400V Advanced New Design R d S O N Avalanche Rugged Technology = 0.48Î2 lD = 8.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 27nC (Typ.)

Contextual Info: SUN1060I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.) • Low gate charge: Qg=27nC (Typ.) • Low reverse transfer capacitance: Crss=4.9pF (Typ.) • RoHS compliant device

Contextual Info: QFET N-CHANNEL FQPF11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. •

Contextual Info: QFET N-CHANNEL FQB11N40, FQI11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ.

SFD30N06

Contextual Info: SFD30N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.04Ω )@VGS=10V ■ Gate Charge (Typical 27nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ { 2. Drain ● 1. Gate

LF114a

Contextual Info: QFET N-CHANNEL FQA11N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. •

mathcad SEPIC

Abstract: Input voltage 40V Output voltage 13.8V mathcad forward converter design SNVS480E mathcad INDUCTOR DESIGN LM5022 Low Side Controller for Boost and SEPIC si4850 SLF12575T-M3R2
Contextual Info: LM5022 LM5022 60V Low Side Controller for Boost and SEPIC Literature Number: SNVS480E LM5022 60V Low Side Controller for Boost and SEPIC General Description Features The LM5022 is a high voltage low-side N-channel MOSFET controller ideal for use in boost and SEPIC regulators. It contains all of the features needed to implement single ended

Contextual Info: PD - 97274C IRF6716MPbF IRF6716MTRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS l Dual Sided Cooling Compatible  25V max ±20V max l Ultra Low Package Inductance

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

FDS6670AS

Abstract: FDS6670A
Contextual Info: FDS6670AS 30V N-Channel PowerTrench“ SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

high voltage mosfet, to-220 case

Contextual Info: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low