27MHZ RF IC Search Results

27mhz rf amplifier

Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)

27mhz rf ic

Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)

NTE237

Contextual Info: NTE237 Silicon NPN Transistor RF Power Output PO = 3.5W, 27MHz Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

2SC2312

Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Contextual Info: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating

27mhz rf ic

Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,

27MHz rf transmitter

Abstract: 27mhz transmitter circuit NTE282
Contextual Info: NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

2SC2078

Abstract: 2sc2078 amplifier 2SC2078 Datasheet 2sc2078 Transistor NPN rf transistor RF POWER TRANSISTOR NPN 2sc2078 2sc207827mhz
Contextual Info: Ordering number:EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C

transistor 2SC2078

Abstract: 2sc2078 2sc2078 Transistor 2SC207S
Contextual Info: Ordering number : EN462E N0.462E 2SC2078 NPN Epitaxial Planar Silicon Transistor SANYO 27MHz RF Power Amp Applications Absolute Maxima» Ratings at Ta=25°C Colleetor-to-Base Voltage CBO Collector-to-Emitter Voltage VCER Emitter-to-Base Voltage VEB0 Collector Current

27mhz rf amplifier

Abstract: 27mhz rf ic 27mhz transistor "RF Power Amplifier" RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2SC2716
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION •High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS Ta=25℃

SPCP18A

Abstract: SPCP18A-06A
Contextual Info: SPCP18A-06A USB-PS/2 1/2-CH 27MHz RF Mouse Receiver NOV. 29, 2004 Version 1.1 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable.

27mhz remote control IC USB

Abstract: 27mhz remote control IC made in china 12MHZ ps2 convert a usb 27.145 RC
Contextual Info: HT82D22R/HT82D22A 27MHz Two Channel RX 8-Bit MCU Features • USB Specification Compliance - Conforms to USB specification V2.0 - Conforms to USB HID specification V1.11 · RF tuner, mixer, transistors, passives, coils, and · Supports 1 Low-speed USB control endpoint and

Detector "Detector IC" CD DVD 10 PIN

Abstract: photodiode dvd cd Photodiode and amplifier IC for CD Detector
Contextual Info: I/V Conversion Amplifier for DVD/CD MM1730XB MITSUMI I/V Conversion Amplifier for DVD/CD Monolithic IC MM1730XB Outline This IC is an I/V conversion amplifier including photodiode elements which correspond to 2-wavelength laser of DVDs and audio CDs. It is optimized for DVD players.

Contextual Info: INTEGRATED T O SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT CIRCUIT TECHNICAL TA8136S DATA SILICON MONOLITHIC RADIO CONTROL TRANSMITTER IC The TA8136S is designed for a 1 chip transm itter IC including pulse generator, duty control mixer, carrier oscillator, and RF pow er am plifier.

WF5075

Abstract: 27mhz rf amplifier
Contextual Info: 5075 series VCXO Module IC with Built-in Varicap OVERVIEW The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

WF5075

Abstract: 27mhz rf amplifier IC sine wave generator for 100Hz-to-10kHz 5075BM 5075B5
Contextual Info: 5075 series VCXO Module IC with Built-in Varicap OVERVIEW The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

Contextual Info: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

CF5076

Abstract: WF5076
Contextual Info: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

5075

Abstract: VCXO
Contextual Info: 5075 series VCXO Module IC with Built-in Varicap OVERVIEW The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

Contextual Info: 5075 series VCXO Module IC with Built-in Varicap OVERVIEW The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

27MHz rf transmitter

Abstract: 27MHz transmitter FM 27MHZ radio control circuit 27mhz transmitter circuit 27mhz transmitter IC 27mhz transmitter 27MHZ TA8136S transmitter ic RF POWER AMP
Contextual Info: TOSHIBA TA8136S TA8136S TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC RADIO CONTROL TRANSMITTER IC The TA8136S is designed for a 1 chip transmitter IC including pulse generator, duty control mixer, carrier oscillator, and RF power amplifier.

sj 2038

Abstract: sj 2025 ic sj 2038 SJ 2036 ic tea 2025 TRANSISTOR FS 2025 sj 2028 tea 2037 2SC2021 TEA 2029 A
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

NTE195A

Abstract: 27mhz rf amplifier NPN transistor Common emitter amplifier 27mhz transistor
Contextual Info: NTE195A Silicon NPN Transistor RF Power Amp/Driver, CB Description: The NTE195A is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a

CF5075

Abstract: 5075BM 8901B WF5075 12mhz crystal C1 C0 5075A 5075B5 23/N-50-7-5
Contextual Info: 5075 series バリキャップ内蔵 VCXO 用 IC •概要 5075 series は幅広い周波数可変範囲の確保が困難な小型の水晶振動子でも広可変を可能にし、これを小さ なチップサイズに集積した小型 VCXO 用 IC です。新開発のバリキャップダイオード搭載プロセスを採用した

short distance rf tx ic

Abstract: 27mhz rf ic RF pcb antenna PCB Antenna matching 27mhz 27mhz ic
Contextual Info: PCB Layout Notes for 27MHz TX and RX Applications PCB Layout Notes for 27MHz TX and RX Applications D/N：HA0210E Component Placement • The first consideration for component placement are their signal lines which must be as short as possible.  The routing space for VCC and GND should be reserved in advance.