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    FLM5359-8C

    Contextual Info: FLM5359-8C fujTtsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 39dBm Typ. • High Gain: G -j^B = 9.5dB (Typ.) • • • • High PAE: r iadd = 32% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


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    39dBm FLM5359-8C FLM5359-8C PDF

    Contextual Info: FLM5359-8C Internally Matched Power iaAs I HTs ABSOLUTE MAXIMUM RATING (A m bient T em perature Ta=25°C t^r. ^ Symbol item CencHtion Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Pt Tc = 25°C Storage Temperature


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    FLM5359-8C 33cIBm 29dBm 27cJBm PDF