27C256 TI Search Results

Contextual Info: 27C256 M icrochip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns maximum access time bit (electrically) Programm able Read Only Memory. The CMOS Technology for low power consumption

Contextual Info: & 27C256 Microchip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns access time available • CMOS Technology for low power consumption bit (electrically) Programmable Read Only Memory. The

Contextual Info: & 27C256 Microchip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K bit (electrically) P rogramm able Read Only Memory. The — 90ns access time available device is organized as 32K words by 8 bits (32K bytes).

Contextual Info: 27C256 & Microchip 256K 32K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or

eprom 27c256 28 PIN DIP 120 NS

Contextual Info: TM NM27C256 262,144-Bit 32K x 8 High Performance CMOS EPROM General Description The NM 27C256 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C256 is a 256K Electrically Program mable Read Only Memory. It is m anufactured in Fairchild’s latest CM OS split gate

eprom 27c256 28 PIN DIP 120 NS

Abstract: 27C256-15 200B 27C256 27C256-10 27C256-12 27C256-20
Contextual Info: 27C256 256K 32K x 8 CMOS EPROM TSOP OE A11 A9 A8 A13 A14 VCC 1 2 3 4 5 6 7 VPP A12 A7 A6 A5 A4 A3 8 9 10 11 12 13 14 27C256 A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC, SOIC, VSOP or TSOP packaging is

Contextual Info: GENERAL INSTRUMENT 27C256 PRELIMINARY INFORMATION 256K 32K x 8 CMOS UV Erasable PROM FEATURES PIN CONFIGURATIONS Top View V p p E •1 A 12C 2 28 □ VDD 27 □ A14 A7tZ 3 26 H A13 A6 C 4 25 □ A8 A5C 5 24 □ A9 A4 d The 27C256 is available in an extensive selection of

27C256 rom

Contextual Info: 27C256 256K CMOS EPROM November 1989 Pin Configuration Features 27C256 m 2 5 6 K 3 2K x 8 C M O S E PR O M Ultra Lo w P ow er • 100 \iA Max. Vcc S tandby C urrent • 4 0 m A Max. A ctive C urrent • ■ Vpp 28 S V cc 2 27 J A 14 3 26 J a 13 c 4 25 J

27C256

Abstract: DS-1100 27C256-15 27C256 DIP DSA0020944 fd179x 27C256-10 27C256-12 27C256-20
Contextual Info: 27C256 256K 32K x 8 CMOS EPROM PACKAGE TYPES TSOP OE A11 A9 A8 A13 A14 VCC 1 2 3 4 5 6 7 VPP A12 A7 A6 A5 A4 A3 8 9 10 11 12 13 14 27C256 A10 CE D7 D6 D5 D4 D3 21 20 19 18 17 16 15 VSS D2 D1 D0 A0 A1 A2 30 31 1 32 2 A7 A12 VPP NU Vcc A14 A13 3 4 29 6 28

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available

Contextual Info: MICROCHIP TECHNOLOGY INC ESE D blü3201 0DG47Ô1 4 • <3.-251 27C256 Microchip 256K 32K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance —150ns maximum access time. • CMOS Technoiogy for low power consumption —20mA Active current

27CS12

Abstract: 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD 27C256
Contextual Info: INTEL CORP flEflORY/PLD/ 44E D 405bl7b GDVIS^ ' T 7% in ta l T • ITL2 ' ß - 2 ci 27C256 256K (32K x 8 CHMOS EPROM High Speed — 120 ns Access Time Low Power Consumption — 100 /xA Standby, 30 mA Active Fast Programming — Quick-Pulse Programming

N27C256-200V10

Contextual Info: in t j, 27C256 256K 32K x 8 CHMOS EPROM • High Speed — 120 ns Access Time ■ Low Power Consumption — 100 juA Standby, 30 mA Active ■ Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as 4 Seconds ■ EPI Processing

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 (iA Standby current • Factory programming available

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 nA Standby current • Factory programming available

Contextual Info: $ 27C256 M ic r o c h ip 256K 32K x 8 CMOS EPROM PACKAGE TYPE FEATURES TSOP • High speed performance .2 8 / ' 27 / 26 25 24 23 22 - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current

27C256

Abstract: eprom 27c256 28 PIN DIP 150 NS 27C256-12 signetics eprom 27c256 28 PIN DIP 150 NS j package signetics 27C256 27c256 signetics eprom 27c256 28 PIN DIP 120 NS 27C256DC ti 27c256 27C256-12
Contextual Info: Philips Components-Signetics 27C256 Document No. 8 53 -0 0 94 ECN No. 01040 Date of Issue Novem ber 12, 1990 Status Product Specification 256K-bit CMOS EPROM 32K x 8 Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Com ponents-Signetics 2 7C 256

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PACKAGE TYPE TSOP • High speed performance - 90 ns access tim e available • CMOS Technology for low pow er consumption - 20 mA Active current - 100 nA S tandby current • Factory program m ing available

microchip 27c256

Contextual Info: JÊ Ë Ê È L* & 27C256 M ig z r o n c h ip i 256K 32K x 8 CMOS EPROM PACKAGE TYPES FEATURES • High speed performance - 90 ns access time available PLCC < < > Z > < < • CMOS Technology for low power consumption - 20 mA Active current A8 A9 A11 - 100 |^A Standby current

27C256-25 microchip

Abstract: 27C256 UV 27C256-25
Contextual Info: 27C256 & M icroch ip 256K 32K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance T h e Microchip Technology Inc 2 7 C 2 5 6 is a C M O S 2 56K — 150ns m axim um access time bit ultraviolet light Erasable (electrically) Program m able

Contextual Info: 27C256 M i c r o c h ip 256K 32K x 8 CMOS EPROM FEATURES P A C K A G E TYPE • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available

Contextual Info: 27C256 256K 32K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS Automotive • Noise Immunity Features — ± 10% Vcc Tolerance — Maximum Latch-up Immunity Through EPI Processing ■ New Quick-Pulse P ro g ra m m in g tm Algorithm — 4 Second Programming ■ Available in 28-Pin Cerdlp Package

TC57256D-20

Abstract: MN27C256-15FA 27c256 intel NMC27C256Q200 NMC27C256BQ200 MBM27C256A-20 MBM27C256A-20X MBM27C256A-25 NMC27C256 MBM27C256A-25X
Contextual Info: - 27C256 ÿ! X £ £ CC TAAC max ns) -f •/ ■f- TCAC ins) 1# TOH max (ns) tt m TOE mix (us) TOD max (ns) VIL max (V) (mA) (V) In A I DD/STANDBY VDD VIH min (V) iti % /M Ci max (pF) V O L / I VOL max (V/mA) ÎE € ìfi V O H / I VOH min (V/mA) Co max

Contextual Info: January 1998 S E M IC O N D U C T O R FM27C256 262,144-Bit 32K x 8 High Speed CMOS EPROM General Description The FM 27C256 is a High Perform ance 32K x 8 UV Erasable EPROM. II is m anufactured using an advanced CM OS pro­ cess technology enabling it to operate at speeds as la s t as