27C TVS Search Results

27C TVS

Abstract: AX28 27c2000
Contextual Info: O K I semiconductor MSM27C2000 262,144-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 27C 2000 is a 262,144-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. The M SM 27C 2000 is m anufactured by CM O S double silicon gate technology

12.75V PGM

Abstract: 27C2000-15 j727 27c2000-12 MAX275 MAX28 MSM27C2000-12 MSM27C2000-15 27c2000
Contextual Info: O K I semiconductor MSM27C2000 262,144-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M SM 27C 2000 is a 262,144-w ord x 8-bit ultraviolet erasable and electrically program m able read-only m em ory. The M S M 27C 2000 is m anufactured by CM O S double silicon gate technology

Contextual Info: O K I semiconductor MSM27C256HZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M S M 27C 256H ZB is a 32,768-w ord x 8-bit electrically program m able read-only memory. The M S M 27C 256H ZB is m anufactured by the CM O S double silicon gate technology and is

D27C64

Abstract: intel D27c64 rt 7257 NEC D27C64 ha 11747 D27C64 intel nec A2C 71454 upd27c64
Contextual Info: ì ; SEC OM ,y NEC Electronics Inc. 006074 Pin C onfiguration A d is tin c tiv e fe atu re o f the ¿/PD27C64 is an o u tp u t enable OE separate fro m the c h ip enable (CE). The OE c o n tro l elim ina tes bus c o n te n tio n in m u ltip le -b u s m icro p ro c e s s o r systems. The//P D 27C 6 4 features fast,

Contextual Info: S E M IC O N D U C T O R January 1998 tm FM27C256 262,144-Bit 32K x 8 High Speed CMOS EPROM General Description The FM27C256 is a High Performance 32K x 8 UV Erasable EPROM. It is manufactured using an advanced CMOS pro­ cess technology enabling it to operate at speeds as fast as

27c010-55

Abstract: 27C512 128K 27C040 FM27C010 NM27C010 27C256 DIP Fairchild F8
Contextual Info: S E M IC O N D U C T O R J anuary 1998 tm FM27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C010 is a High Perform ance 128K x 8 UV Eras­ able EPROM. It is m anufactured using an advanced C M OS process technology enabling it to operate at speeds as fast

27c010-55

Abstract: Fairchild F8
Contextual Info: S E M IC O N D U C T O R J anuary 1998 tm FM27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C010 is a High Perform ance 128K x 8 UV Eras­ able EPROM. It is m anufactured using an advanced C M OS process technology enabling it to operate at speeds as fast

27C64-30

Abstract: Fujitsu 27C64-30 i3001 Fujitsu 27C64
Contextual Info: FUJITSU M I C RO ELECT RO NICS S3E D 37^7^5 000=1152 7 C M O S IU V : E R A S A B L F U J IT S U 6 5 5 3 6 -B C E R E A ò nl ^ m em ofm M CMOS 8192X8BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 bit static complementary MOS

MBM27C256A

Abstract: MBM27C256A-25-W
Contextual Info: FUJITSU MI CR OELE C T R ON I C S 7û dF | 374^7b2 D003SE7 S ~ J ~ T - V ¿ •/> 2T FU JITSU MOS Memories M B M 2 7 C 2 5 6 A -2 0 -W M B M 2 7 C 2 5 6 A -2 5 -W CMOS 32,768 x 8-Bit UV Erasable and Electrically Programmable Read Only Memory D es c rip tio n

Contextual Info: P6KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.5 to 376 Volts POWER 600 Watts DO-15 Unit: inch mm Recongnized File # E210467 FEATURES 1.0(25.4)MIN. .034(.86) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O

300CA

Contextual Info: P4KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.5 to 376 Volts POWER 400 Watts DO-41 Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O 1.0(25.4)MIN. .034(.86) • Excellent clamping capability

P8KE

Contextual Info: P6KE6.8 thru P6KE440CA 600 Watt Axial Leaded TVS TEL: 805-498-2111 FAX : 805-498-3804 DESCRIPTION FEATURES: The P6KE series of transient voltage suppressors are designed to protect components from over voltages caused by electrostatic discharge ESD , electrical fast

212 t sot-23

Abstract: marking code 27c SOT 23 J2411 SOT-23 15D SOT-23 marking 15d marking 15d 212 sot-23 212 s sot-23 27C SOT23 27C TVS
Contextual Info: MMBZ15VDLT1, MMBZ27VCLT1 Preferred Devices 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

SAE J2411

Abstract: J2411 27C zener TVS Diode SOT-23 marking 15d MMBZ15VDLT1G MMBZ15VDLT3 MMBZ15VDLT3G MMBZ27VCLT1 MMBZ27VCLT1G MMBZ15VDLT1
Contextual Info: MMBZ15VDLT1, MMBZ27VCLT1 Preferred Devices 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT-23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

Contextual Info: MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

SZMMBZ2

Abstract: marking 15d MMBZ15VDLT1G SZMMBZ1
Contextual Info: MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

27C128-20

Abstract: 27C128-25 MAX165 MAX200 MAX250 MSM27C128AS b409 PF412
Contextual Info: O K I semiconductor MSM27C128AS 1 6 3 8 4 x 8 BIT UV E R A S A B L E E L E C T R IC A L L Y PRO GRAM M ABLE READ -O N LY MEMORY G E N E R A L D ESC R IP TIO N T h e M S M 2 7 C 1 2 8 is a 1 6 3 8 4 w ords x 8 bit ultraviolet e ra sa b le and e le c tric a lly program m able

J2411

Abstract: MMBz27VCLT1G SZMMBZ2 MARKING zeners SOT-23 marking 15d marking code 27c SOT 23 automotive ecu manual SZMMBZ27VCLT1 J241
Contextual Info: MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

marking 15d

Abstract: marking code 27c SOT 23
Contextual Info: MMBZ15VDLT1, MMBZ27VCLT1, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com 1 SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

mmbz27vclt1g

Abstract: SAE J2411 MMBZ15VDLT1 J2411 MMBZ15VDLT1G MMBZ27VCLT1 27C zener MMBZ15VDLT3 MMBZ15VDLT3G automotive ecu manual
Contextual Info: MMBZ15VDLT1, MMBZ27VCLT1 Preferred Devices 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

Diode SOT-23 marking 15d

Abstract: Diode SOT-23 marking 27C SAE J2411 marking code 27c 27C TVS 27C zener TVS Diode SOT-23 marking 15d J2411 MMBZ15VDLT1 MMBZ15VDLT1G
Contextual Info: MMBZ15VDLT1, MMBZ27VCLT1 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

A12C

Abstract: SPM27C64H20 PGMH 256x32
Contextual Info: PF216-02 SPM27C64H 1 5 /2 0 CMOS 64K-BIT UV EPROM/OT PROM •A ccess Time 150ns/200ns •8 ,1 9 2 Words X 8 Bits Asynchronous •L o w Supply Current •DESCRIPTION The CMOS EPROM SPM27C64Hi5/2o is an 8,192 words x 8 bits erasable and electrically programmable ROM.

27C256 wsi

Abstract: 27C256F
Contextual Info: DE | TSBTbTG 0000214 G | T-U-Q-Z^ WAFER SCALE INTEGRATION WS27C256L ADVANCE INFORMATION WAFERSCAIÆ INTEGRATION, INC. 32K 8 CMOS EPROM X KEY FEATURES • 300 Mil Dip or Standard 600 Mil Dip Fast Access Time — 90 ns • EPI Processing Low Power Consumption

FZH 105 A

Abstract: FZH 165 b fzh 111 FZH 265 b FZH 145 b fzh 171 FZH 131 fzh 145 FZH 265 fzh 105
Contextual Info: 1.5SMC SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.5 to 214 Volts PEAK PULSE POWER 1500 Watts SMC/DO-214AB Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated chip junction in SMC/DO-214AB package