TP4213
Abstract: TP2658 30B4 diode DIODE 20B2 diode 30b4 tp4203 TP2923 aLC665 37 TV samsung dvd Schematic circuit diagram 26c4
Contextual Info: SAMSUNG X06 Dothan Intel Alviso + ICH6-M Internal Gfx. Sheet1. Sheet2. Sheet3. Sheet4. Sheet5. Sheet6. Sheet7. Sheet8. Sheet9. Sheet10. Sheet11. Sheet12. Sheet13. Sheet14. Sheet15. Sheet16. Sheet17. Sheet18. Sheet19. Sheet20. Sheet21. Sheet22. Sheet23. Sheet24.
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sheet10sheet11sheet12sheet13+16sheet14sheet15sheet16sheet17sheet18sheet19tp4213tp265830b4 diodediode 20b2diode 30b4tp4203tp2923alc66537 tv samsung dvd schematic circuit diagram26c4
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DIODE 20B2
Abstract: TP4213 TP2658 SHEET15 30B4 diode 37 TV samsung lcd Schematic circuit diagram TP5000 alviso-GM 30B4 BA92-03859A
Contextual Info: SAMSUNG X06 GUO LEI ZHOU JUN DRAW Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R. Date : CPU : Chip Set : Remarks : CHEN TAO CHECK KEVIN LEE APPROVAL X06 BA92-03859A BA41-00529A MP 1.0 2005-6-25 Dothan Intel Alviso + ICH6-M Internal Gfx. Aquila-So
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sheet10sheet11sheet12sheet13+15sheet14sheet15sheet16sheet17sheet18sheet19diode 20b2tp4213tp265830b4 diode37 tv samsung lcd schematic circuit diagramtp5000alviso-gm30b4ba92-03859a
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DIODE 22B4
Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
Contextual Info: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams
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ba92-01774aba41-400mhz512mbyte+1566mhzmap3168ohm3000ma012ohmdiode 22b4ba4602ba41-00316aar5212map17-232q506nvidia 7100ar521127b1 diodegeforce4
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XC503
Abstract: schematic diagram tv samsung AR5212 XC502 C568 ar5312 ZD5022 CT502 7S06 SOT23 d526 y
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X30 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 42(Operation Block Diagram)
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diagraa-062a17-01-b-002a02-02-a-001a04-01-a-047+16a09-01-a-089ltst-c150gktsls-pgye301-tmot-2512513wr-04a0cim10j121nesxc503schematic diagram tv samsungar5212xc502c568ar5312zd5022ct5027s06 sot23d526 y
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schematic diagram hdmi to rca
Abstract: GFX SE DIODE LE88CLPM NH82801HEM TP16355 RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD, RAS 0510 f8 vga nb8p BA41-00745A
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D MILAN CPU : Chip Set : Remarks :
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ba41-00745asw501a3212elh/hed55xxu12100nf+12mt504tp17294tp17297schematic diagram hdmi to rcagfx se diodele88clpmnh82801hemtp16355ras 0510 sun holdsun hold ras 0510sun hold, ras 0510f8 vga nb8p
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RAS 0510 SUN HOLD
Abstract: sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D GENEVA CPU : Chip Set : Remarks :
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ba41-xxxxxshep18050tp18051tp18052+16tp18164tp18170tp18172tp18178tp18183tp18187ras 0510 sun holdsun hold ras 0510sun hold, ras 0510nh82801hbmbd3 c531 diodeschematic diagram hdmi to rcale88clpmu519-120b3 diodeschematic diagram crt tv samsung
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20b1 diode
Abstract: TP5056 samsung R530 2.0b1 diode TP-103-03 TP10592 smd diode ab11 b34 TP10387 sock 30p-2r-smd diode 107 10K 521
Contextual Info: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung's authorization. 9. 회로도 9-1. External Graphic 9 - 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL
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bridge/ide/ac97/smbusconn-12p-fpc100nf20b1 diode+9tp5056samsung r5302.0b1 diodetp-103-03tp10592smd diode ab11 b34tp10387sock 30p-2r-smddiode 107 10k 521
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samsung R530
Abstract: TP5056 smd diode ae C535 30C4 20b1 diode smd diode ab11 b34 U-503 B5-17 R-5670 Socket AM2
Contextual Info: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung's authorization. 9. 회로도 9-1. External Graphic www.kythuatvitinh.com 9 - 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL
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bridge/ide/ac97/smbusconn-12p-fpc100nfsamsung r530+9tp5056smd diode ae c53530c420b1 diodesmd diode ab11 b34u-503b5-17r-5670socket am2
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31d8 diode
Abstract: r2561 741G32 zener 12a2 27b4 R3381 zener 12B2 2N7002DW MAX4172 TH 2267 charger circuit diagram
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM PCB NOTES AND HOLES
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mpc7450200pin31d8 dioder2561+8741g32zener 12a227b4r3381zener 12b22n7002dwmax4172th 2267 charger circuit diagram
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Diode 31d8 06
Abstract: r2561 11A3 bubba oscillator schematic 31d8 diode 2N7002DW zener DB3 C209 bubba oscillator 88E1111 config MBR0520LT
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 C B CONTENTS
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mpc7450200pindiode 31d8 06r2561+811a3bubba oscillator schematic31d8 diode2n7002dwzener db3 c209bubba oscillator88e1111 configmbr0520lt
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sil1162
Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM
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mpc7450200pinrpak10p2c1000bt+11sn74auc1g04sil1162diode 31d8 0631d8 diodec828 3-pin transistor2n7002dw3 pin hall effect sensor u58hall effect sensor u58zener 12a2powerbookbubba oscillator schematic
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C547 c
Abstract: BA41-00811A BA41-00791A R7790 Samsung Praha SRI Rev 1_0 keyboard and touchpad schematic ap4435gm Socket AM2 smd diode code F45 21Ring
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS
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ba41-00791aba41-00792aba41-00811a800mhz+14rs600mesb6000033nf018nf022nf027nfc547 cr7790samsung praha sri rev 1_0keyboard and touchpad schematicap4435gmsocket am2smd diode code f4521ring
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BA41-00791A
Abstract: D51233 218S6ECLA21FG BA41-00811A R7790 AP680AGM Samsung Praha SRI Rev 1_0 HDR-10P-1R-SMD 88E8039 RS600ME
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS
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800mhzrs600mesb600ba41-00791a+13ba41-00792aba41-00811a022nf027nf047nf0033nfd51233218s6ecla21fgr7790ap680agmsamsung praha sri rev 1_0hdr-10p-1r-smd88e8039
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22B4 diode ZENER
Abstract: smk 1350 transistor 88E1111 BCC package SIL1162 LS650 C3333 P33A zener DIODE 5c2 39C6 2N7002DW
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD DRAWING 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN DATE 02 D PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
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mpc7447a400pinlmc7211nc7s32+15max4172tps2211fan2558max1772max171722b4 diode zenersmk 1350 transistor88e1111 bcc packagesil1162ls650c3333p33azener diode 5c239c62n7002dw
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18b2 diode
Abstract: BA41-00671A 30B4 DIODE 20B2 diode 5.1B3 B20 C875 B2 CIS10J270NC ICS951413CGLFT ATI IXP450 38b2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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533/667mhzrc410mdsb450ba41-00659a+15ba41-00671arc410md/rc410mesheet18sheet19018nf022nf18b2 diode30b4diode 20b2diode 5.1b3b20 c875 b2cis10j270ncics951413cglftati ixp45038b2
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C3979
Abstract: 65a3 ISL9504 Apple K23 MLB c5296 77A5 PP3V42G3H 65C6 ar9350 PP3V42
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M59 ZONE ECN A ENG APPD DESCRIPTION OF CHANGE 463525 PRODUCTION RELEASE
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c397965a3isl9504apple k23 mlb+6c529677a5pp3v42g3h65c6ar9350pp3v42
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DIODE 20B2
Abstract: CIS10J270NC ELM7S08WS BA41-0071 D5092 28B3 KBC3_SUSPWR RS600ME 218s6ecla21fg K45 S2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D Table of Contents FIRENZE2-R Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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533/667mhzrs600mesb600ba41-00714a+15ba41-00715a022nf027nf047nf0033nf018nfdiode 20b2cis10j270ncelm7s08wsba41-0071d509228b3kbc3_suspwr218s6ecla21fgk45 s2
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54B4
Abstract: ALC286 BA41-00814A 218S6ECLA21FG BA41-00812A 54-B4 RS600ME RC410 BG41 mx25l8005m2c-15g
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS
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800mhzrs600mesb600ba41-00806a+13ba41-00812aba41-00814atp18830tp18831tp18832tp1883354b4alc286218s6ecla21fg54-b4rc410bg41mx25l8005m2c-15g
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ST T4 D560
Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom
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yonah667sheet18sheet19sheet20+16sheet24sheet25sheet29sheet30sheet32sheet33st t4 d560st d560 t4st 1803 dhib-566u574j551246d1ba09-00009asamsung gddr354b4
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ICS951461
Abstract: CQ533 218s6ecla21fg R5538 by503 TP2205 TP2136 b536 AF45 DIODE SMD SS338A
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION
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rs600msb600ba41-xxxxxars600+14rev500tp2123tp2124tp2125ics951461cq533218s6ecla21fgr5538by503tp2205tp2136b536af45 diode smdss338a
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20C8
Abstract: 20B3 diode 22B2 DIODE DIODE 22B4 RB342 diode 62b3 22A5 61a3 55A7 20D2
Contextual Info: DS33Z44DK Ethernet Transport Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES Demonstrates Key Functions of DS33Z44 Ethernet Transport Chipset Includes Two Resource Cards: One with DS21458 T1/E1 SCT and one with DS3174 T3/E3 SCT, Transformers, BNC and RJ48
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ds33z44dkds33z44ds21458ds3174+14mmc2107gnd105gnd117cr-6320c820b3 diode22b2 diodediode 22b4rb342diode 62b322a561a355a720d2
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SS338A
Abstract: Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION
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rs600msb600ba41-xxxxxars600+14rev500tp2165tp2123tp2124ss338adiode smd bd27bd2430cq52118b2 diodebe5133b506hainan2tp2041b538
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BA41-00808A
Abstract: BA41-00807A samsung schematic ICS95461 TP2136 tp2116 hainan3 HU-1M2012-121JT BA41-00809A 2u42
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_INT C CPU : Chip Set :
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rs600msb600ba41-00807aba41-00808a+12rs600tp2656rev500tp2660samsung schematicics95461tp2136tp2116hainan3hu-1m2012-121jtba41-00809a2u42
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54B2
Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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rc410mdsb450ba41-00615asheet18+15sheet19sheet20tp682tp685tp68654b2hh-1m1608-600jt20b3 diodetp807tp889hh-1m1608rc410mir 30d1 7etp828t9504
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