2716 PROM Search Results

intel 2732 eprom

Abstract: 2716 EPROM 24 PINS 2716 eprom eprom 2716 intel 2716 memory 2716 intel 2716 eprom rom 2716 2716 2716 2k eprom
Contextual Info: in te i 2716* 16K 2K x 8 UV ERASABLE PROM • Fast Access Time — 350 ns Max. 2716-1 — 390 ns Max. 2716-2 — 450 ns Max. 2716 — 490 ns Max. 2716-5 — 650 ns Max. 2716-6 ■ Pin Compatible to Intel 2732 EPROM ■ Single + 5V Power Supply ■ Inputs and Outputs TTL Compatible

eprom 2716

Abstract: 2716 eprom ic 2716 intel 2716 eprom 2764ai 2716 2k eprom 2716 2716 IC 2716 EPROM 24 PINS memory 2716
Contextual Info: intei 2716 16K 2K x 8 UV ERASABLE PROM Fast Access Time - 2 7 1 6 -1 : 350 ns Max - 2 7 1 6 -2 : 390 ns Max — 2716: 450 ns Max Pin Compatible to Intel “Universal Site” EPROMs Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse

AM2716DC

Abstract: AM2716-1DC AM2716-6DC AM2716 AM4716DC AM4716 Am2716-1 am9218 am2716d AM4716-6DC
Contextual Info: A m 2 7 1 6 /A m 4 7 1 6 2048 x 8-Bit UV Erasable PROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • Direct replacement for Intel 2716 Interchangeable with Am9218 - 16K ROM Single +5V power supply Fast access time - 450ns standard with 350ns and 390ns

CDFP4-F24

Abstract: HM-6617 HS1-6617RH-8 HS1-6617RH-Q HS-6617RH HS-80C85RH HS-80C86RH
Contextual Info: HS-6617RH Radiation Hardened 2K x 8 CMOS PROM August 1995 Features • • • • • • • • • • • • • • • Pinouts 5 Total Dose 1 x 10 RAD Si Latch-Up Free >1 x 1012 RAD (Si)/s Field Programmable Functionally Equivalent to HM-6617 Pin Compatible with Intel 2716

M2716-1F1

Abstract: M2716F1 SGS M2716 m27161f1 bull thomson M2716-F1 M2716 SGS ET2716Q DIP-24 ET2716
Contextual Info: 7 e!EJ S 3_7_0D.2731.2_7 • S G S -T H O M S O N Ü L iÊ T O R D D Ê i _ ET2716 M 2716 3QZ * 16K 2K x 8 NMOS UV ERASABLE PROM S G S-THOMSON ■ 2048 x 8 ORGANIZATION ■ 525 MW MAX ACTIVE POWER, 132 MW MAX STANDBY POWER ■ LOW POWER DURING PROGRAMMING

SN76477

Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p

eprom 2716

Abstract: 2716 JL 2716 eprom mcm2716 motorola 2716 3A11 MCM68A316E MMD6150 MMD7000 623A
Contextual Info: M O T O R O L A 2048 x 8-BIT UV ERASABLE PROM MOS N -C H A N N E L, S ILIC O N -G A TE The M CM 2716 is a 16,384-bit Erasable and Electrically Reprogram ­ m able PR OM designed fo r system deb ug usage and s im ilar a pp iica tions requiring non vo la tile m em o ry th a t c o u ld be reprogram m ed periodically.

rom 2716

Abstract: eprom 2716 memory 2716 2716 ROM intel 8085 2716s 2716 2716 eprom intel 2716 eprom 2716A
Contextual Info: in te i 16K 2K X m 12716 8 UV ERASABLE PROM INDUSTRIAL Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse Fast Access Time: 450 ns Max • Industrial Grade Temperature Range: - 4 0 8C t o + 8 5 ° C ■ Single + 5V Power Supply

information applikation

Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Contextual Info: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK

m2716a

Abstract: M2732 M2732 25v m2716 M2716M Intel 1030 EPROM M2732 eprom m2716
Contextual Info: intei M27Î6/M2716M 16K 2K x 8 UV ERASABLE PROM M IL IT A R Y • Fast A c c e ss Time; 450 ns maximum Military Temperature Range M2716M: -55°C to 125°C M2716: -55°C to 100°C ■ Static Standby M ode ■ Low Power Dissipation of 165 mW maximum standby power

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

intel 2716

Abstract: 2716 EPROM 24 PINS LM6417E eprom 2716 LM6402H LM6402 2716 2k eprom LM6416E LM6416 LM8416
Contextual Info: L M 6 4 P G 9 9 ,9 8 ,9 7 No. 1248 CHIPS FOR EVALUATING N MOS 4-BIT SINGLE-CHIP MICROCOMPUTER LM6400 SERIES SYSTEM SA N Y O 1. General Description The LM64PG99/98/99 are system evaluation chips Intended for application development tools of 4-blt ilngle-chip

MOSTEK ROM

Abstract: MOSTEK MEMORY MK2716 MK2716-12 MK34000 MK3880
Contextual Info: MQSTEK ff? 2048 x 8-BIT EPROM Electrically Programmable/Ultraviolet Erasable ROM MK2716 J -12 FEATURES □ Three State O utput OR-tie capability □ 16,384 Bit U ltraviolet Erasable E lectrically Program ­ mable ROM organized as 2,048 w ords by 8 bits □ Five modes of operation fo r greater system fle xib ility

microprocessor Rockwell R6500

Contextual Info: R6500/1E R6500/1E Microprocessor Emulator Device * » Rockwell INTRODUCTION document. The R650Q/1 Product Description Order No. 212 con­ tains a description of R6500/1 functions and interface signals. The R6500/1E device provides all the features of the R6500/1

IC 2732

Abstract: intel 2732 pin diagram of ic 2732 2732 memory chip 2732 eprom 2732 EPROM specification intel 2732 eprom 2732 2732 rom eprom 2732
Contextual Info: intei 2732 32K 4K x 8 UV ERASABLE PROM Output Enable for MCS-85 and MCS86™ Compatibility Fast Access Time: — 390 ns Max. 2732-4 — 450 ns Max. 2732 — 550 ns Max. 2732-6 Industry Standard Pinout — JEDEC Approved Low Power Dissipation: — 150mA Max. Active Current

JA3A

Abstract: M2716 M2716M M2732A 271006
Contextual Info: intei M2716/M2716M 16K 2K x 8 UV ERASABLE PROM Military m Military Temperature Range • Static Standby Mode ■ Low Power Dissipation of 165 mW Maximum Standby Power ■ Inputs and Outputs TTL Compatible During Read and Program ■ Not Recommended for New Designs

27C32

Abstract: NMC27C64Q250 27C128 27C256 27C512 NMC27C64 NMC27C64QE EPROM 27C32 NMC27C64Q-150 NMC27C64QE200
Contextual Info: NMC27C64 Juâ National Semiconductor NMC27C64 65,536-Bit 8k x 8 UV Erasable CMOS PROM General Description Features The NMC27C64 is a high-speed 64k UV erasable and elec­ trically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation

atmel 93c66

Abstract: PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A 556RT5 intel 8755 eprom 2716 537RU17
Contextual Info: Универсал ьны й програм матор Sterh ST­011 Производст во: Россия. Цен а: 17500 руб. с НД С. ST­011 имеет всего одну универсальную DIP­42 панель для программирования

Contextual Info: NMC27C128BN 3 National Sem iconductor PRELIMINARY NMC27C128BN High Speed Version 131,072-Bit 16k x 8 One Time Programmable CM O S PROM G eneral D e scrip tio n Features The NMC27C128BN is a high-speed 128k one time pro­ grammable CMOS PROM, ideally suited for applications

27C32

Abstract: 27C128 27C16 27C256 27C512 NMC27C64N 27256 block diagram 27128 block diagram NMC27C64N250 2732 rom
Contextual Info: NMC27C64N National Éjê Semiconductor NMC27C64N 65,536-Bit 8k x 8 One-Time Programmable CMOS PROM General Description Features The NMC27C64N is a high-speed 64k one-time programma­ ble CMOS PROM. It is ideally suited for high volume produc­ tion applications where low cost, la st turnaround, and low

Contextual Info: NMC27C512AN 524,288-Bit 64k x 8 One Time Programmable CMOS PROM General Description Features The NMC27C512AN is a high-speed 512k UV one time pro­ grammable CMOS EPROM, ideally suited for applications where fast turnaround and low power consumption are im­

Intel mcs-40

Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
Contextual Info: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough

intel 2708 eprom

Abstract: B 2716 D EEPROM intel 568AF Intel 1702 eprom memory EPROM 2708 ic 2716 eprom
Contextual Info: intei ARTICLE REPRINT AR-119 March 1980 Reprinted rom ELECTRONICS, February 28,1980; Copyright McGraw-Hill, Inc., 1960. All rights reservad. 5-67 AFN-01913A AR-119 r t he electrically erasableprogrammable read-only previously not practical. The m icroprocessor system

P2764A-2

Contextual Info: 2764A ADVANCED 64K 8 K x 8 PRODUCTION AND UV ERASABLE PROMs New Quick-Pulse Programming Algorithm For Plastic P2764A — 1 Second Programming — inteligent Programming™ Algorithm Compatible Plastic P2764A is Compatible with Auto-insertion Equipment