27.5DBM ,GAAS FET Search Results

27.5DBM ,GAAS FET Result Highlights (3)

Part	Manufacturer	Description
OPA2137EA/250G4	Texas Instruments	Low Cost FET-Input Operational Amplifier 8-VSSOP
OPA2137EA/250	Texas Instruments	Low Cost FET-Input Operational Amplifier 8-VSSOP
OPA2137EA/2K5	Texas Instruments	Low Cost FET-Input Operational Amplifier 8-VSSOP

27.5DBM ,GAAS FET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGF2415 Contextual Info: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz	Original	MGF2415A MGF2415A, 150mA MGF2415	PDF
MGF2415A Abstract: MGF2430A Contextual Info: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz	Original	MGF2415A MGF2415A, 150mA MGF2415A MGF2430A	PDF
Contextual Info: FLM6472-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 27.5dBm • Broad Band: 6.4 to 7.2GHz • Impedance Matched Zin/Zout = 50ohm	Original	FLM6472-6F -46dBc 50ohm FLM6472-6F 25deg	PDF
FLM7179-6F Contextual Info: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7179-6F -46dBc FLM7179-6F FCSI0598M200	PDF
417-116 Abstract: FLM5964-6F Contextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5964-6F -46dBc FLM5964-6F FCSI0598M200 417-116	PDF
FLM7785-6F Contextual Info: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7785-6F -46dBc FLM7785-6F FCSI0598M200	PDF
Contextual Info: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W	Original	FLM7179-6F -46dBc FLM7179-6F FCSI0598M200	PDF
Contextual Info: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W	Original	FLM6472-6F -46dBc FLM6472-6F FCSI0598M200	PDF
FLM6472-6F Contextual Info: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM6472-6F -46dBc FLM6472-6F	PDF
Contextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50W	Original	FLM5964-6F -46dBc FLM5964-6F FCSI0598M200	PDF
Contextual Info: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50W	Original	FLM7785-6F -46dBc FLM7785-6F FCSI0598M200	PDF
417-116 Abstract: FLM5964-6F 26dBm Contextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5964-6F -46dBc FLM5964-6F 417-116 26dBm	PDF
Ocean 477 Abstract: FET transistors with s-parameters FLM7179-6F Contextual Info: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7179-6F -46dBc FLM7179-6F Ocean 477 FET transistors with s-parameters	PDF
Contextual Info: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7785-6F -46dBc FLM7785-6F Voltage88	PDF

FLM5964-6F Contextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5964-6F -46dBc FLM5964-6F	PDF
Contextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM5964-6F -46dBc FLM5964-6F FCSI0598M200	PDF
Contextual Info: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM6472-6F -46dBc FLM6472-6F	PDF
FLM6472-6F Contextual Info: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM6472-6F -46dBc FLM6472-6F FCSI0598M200	PDF
FLM7785-6F Contextual Info: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7785-6F -46dBc FLM7785-6F	PDF
fujitsu gaas fet Abstract: FLM7785-6F Contextual Info: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7785-6F -46dBc FLM7785-6F fujitsu gaas fet	PDF
Contextual Info: FLM6472-6F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm	OCR Scan	FLM6472-6F -46dBc FLM6472-6F FCSI0598M200	PDF
Contextual Info: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: riadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM7785-6F -46dBc FLM7785-6F FCSI0598M200	PDF
cq 838 Abstract: FLM7179-6F CQ 539 Contextual Info: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	-46dBc FLM7179-6F FLM7179-6F FCSI0598M200 cq 838 CQ 539	PDF
M 1661 S Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power	OCR Scan	MGFC2415A MGFC2400 150mA M 1661 S	PDF

27.5DBM ,GAAS FET Search Results

27.5DBM ,GAAS FET Result Highlights (3)

27.5DBM ,GAAS FET Datasheets Context Search

MGF2415

MGF2415A

FLM7179-6F

417-116

FLM7785-6F

FLM6472-6F

417-116

Ocean 477

FLM5964-6F

FLM6472-6F

FLM7785-6F

fujitsu gaas fet

cq 838

M 1661 S