26MAY2009 Search Results

Contextual Info: TH THS4521 THS4522 THS4524 S4 521 TH TH S4 S4 524 522 www.ti.com. SBOS458B – DECEMBER 2008 – REVISED MAY 2009

M29W800FT

Contextual Info: M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit 1 Mbitx8 / 512 Kbit×16 ; 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access time: 55 ns, 70 ns, 90 ns (only available

NAND512R3A2D

Abstract: NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor
Contextual Info: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

13.56 MHz spiral antenna

Abstract: 7405-901 RFID loop antenna design reader 13.56 MHz iso 10373-7 loop HF RFID loop antenna design matching RFID loop antenna 13.56 AN2972 RFID reader passive RFID loop antenna how to design 13.56 MHz RFID tag
Contextual Info: AN2972 Application note Designing an antenna for the M24LR64-R dual interface I²C/RFID device Introduction The M24LR64-R device is an EEPROM designed for access via two different interfaces: a wired I2C interface and a standard contactless ISO 15693 RFID interface.

AN2810

Abstract: LED7707 BAS69 LED7706 STPS1L40M UMK325BJ106KM-T
Contextual Info: AN2810 Application note 6-row 85 mA LED driver with boost converter for LCD panel backlighting Introduction The LED7707 LED driver from STMicroelectronics consists of a high-efficiency monolithic boost converter and six controlled current generators rows , specifically designed to supply

AN2639

Abstract: top-side marking STMicroelectronics LQFP SM817 TOPSIDE MARKING PDIP STMicroelectronics AN2034 J-STD-020D J-STD-020d.1 disadvantages of microcontroller JESD22A111 VFQFPN thermal resistance
Contextual Info: AN2639 Application note Soldering recommendations and package information for Lead-free ECOPACK microcontrollers Introduction STMicroelectronics microcontrollers support various types of Lead-free ECOPACK® package to meet customer requirements. The mounting technologies are Surface mount technology SMT , and Through hole

TH4521

Abstract: ths4522 ADS1278 OPA2350 THS4121 THS4130 THS4520 THS4521 THS4521D THS4524IDBT
Contextual Info: TH THS4521 THS4522 THS4524 S4 521 TH TH S4 S4 524 522 www.ti.com. SBOS458B – DECEMBER 2008 – REVISED MAY 2009

13003n

Abstract: ST13003N FLUORESCENT LAMPS CFLS ibm rev.1.5 13003
Contextual Info: ST13003N High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 ■ 2 1 Compact fluorescent lamps CFLs

VFQFPN-40

Abstract: f 71875 resistor 240 BAT54C VR11 VRD11 L6706 6x6mm
Contextual Info: L6706 VR11.1 single phase controller with integrated driver Features • 8-bit programmable output up to 1.60000 V Intel VR11.1 DAC ■ High current embedded driver ■ High output voltage accuracy ■ Programmable droop function ■ Imon output ■ Load transient boost LTB Technology to

X0619

Abstract: X00619MA MARKING CODE CGK X006
Contextual Info: X00619 0.8 A sensitive gate SCR Features • IT RMS = 0.8 A ■ VDRM / VRRM = 600 V ■ IGT = 30 to 200 µA A G K Applications ■ Limited gate current topologies ■ Ground fault circuit interrupters ■ Overvoltage crowbar protection in power supplies ■

STD815CP40

Abstract: D815C D815CP40 transistor 48
Contextual Info: STD815CP40 Complementary transistor pair in a single package Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Application ■ 1 Compact fluorescent lamp (CFL) 220 V mains DIP-8 Description

NAND512W3A2D

Abstract: NAND512R3A2D
Contextual Info: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features „ „ High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

AEC-Q101-REV-C

Abstract: J-STD-020D 67-21-R7SC-T1R1S1B7E-2T8-AM
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. Technical Data Sheet Top View LEDs 67-21-R7SC-T1R1S1B7E-2T8-AM Feature ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ RoHS compliant. P-LCC-2 package. Colorless clear resin. Wide viewing angle 120o. Inner reflector and white package. Brightness: 112 to 224 mcd at 20mA.

TPD4S009DBVR

Abstract: TPD4S010DQAR TPDS4010 TPD4S009 TPD4S009DGSR TPD4S009DRYR TPD4S010
Contextual Info: TPD4S009 TPD4S010 www.ti.com. SLVS817C – MAY 2008 – REVISED MAY 2009 4-CHANNEL ESD SOLUTION FOR HIGH-SPEED DIFFERENTIAL INTERFACE

RHF310

Abstract: RHF310K-01V RHF310K1 DBK70
Contextual Info: RHF310 Rad-hard 400 µA high-speed operational amplifier Preliminary data Features • Pin connections top view TM OptimWatt device featuring ultra-low 2 mW consumption and low 400 A quiescent current(a) ■ Bandwidth: 120 MHz (gain = 2) ■ Slew rate: 115 V/μs

Contextual Info: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface

t 0433 transistor

Abstract: NAND512R3A2D
Contextual Info: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface

7637-2

Abstract: PowerSSO-24 VND5012AK-E VND5012AKTR-E CDM-AEC-Q100-011 ISO7637
Contextual Info: VND5012AK-E Double channel high side driver with analog current sense for automotive applications Features Max supply voltage VCC 41 V Operating voltage range VCC 4.5 to 36 V Max on-state resistance per ch. RON 12 mΩ Current limitation (typ) ILIMH 60 A

13003 TRANSISTOR

Abstract: st 13003 TRANSISTOR npn 13003N transistor 13003 13003 TRANSISTOR npn 13003 application notes ST13003N ST13003 transistor 13003 A 13003 power transistor
Contextual Info: ST13003N High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Application ■ Compact fluorescent lamps CFLs 1 Description 3 SOT-32 The device is manufactured using high voltage

Contextual Info: 2 THIS £L DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL F OR PUBLICATIO N R 1G H T S 20 L OC RESERVED. DIST R E V I SIONS 00 GP LTR DESCRIPTIO N PRELIMINARY PER REVISED EC PER EC DATE OS I 3 - 0 0 8 3 - 0 5 OS I 3 - 0 3 0 8 - 0 5

Contextual Info: STD815CP40 Complementary transistor pair in a single package Datasheet — production data Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Application ■ 1 Compact fluorescent lamp (CFL) 220 V mains

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R - B Y TYCO E LE C TR O N IC S 5 3 4 2 P U B L IC A T IO N A L L INTERNATIO NAL RIGHTS C O P Y R IG H T 6 LOC D IS T R E V IS IO N S GP 00 RESERVED. C O R P O R A TIO N . LTR D E S C R IP T IO N

X00619MA5AL2

Contextual Info: X00619 0.8 A sensitive gate SCR Datasheet − production data Features • IT RMS = 0.8 A ■ VDRM, VRRM = 600 V ■ IGT = 30 to 200 µA A G K Applications A ■ Limited gate current topologies ■ Ground fault circuit interrupters ■ Overvoltage crowbar protection in power

d815cp40

Abstract: STD815CP40 DIP8 STMicroelectronics marking code st DIP8 marking code D815C
Contextual Info: STD815CP40 Complementary transistor pair in a single package Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Applications ■ 1 Compact fluorescent lamp (CFL) 220 V mains DIP-8 Description