260MW Search Results

Contextual Info: HI5766 HARRIS S E M I C O N D U C T O R 10-Bit, 60 MSPS A/D Converter August 1997 Description Features Sampling R a te . 60 MSPS 8.3 Bits at f|N = 10MHz Low Power at 60 M S P S . 260mW

FASTRACK

Abstract: 20-PIN MAX3873 MAX3873EGP VCC511
Contextual Info: 19-2087; Rev 1; 3/02 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873 is implemented in Maxim’s second-generation SiGe process and consumes only 260mW at 3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN

regenerator in optical

Abstract: MAX3873AEGP 20-PIN MAX3873A
Contextual Info: 19-2577; Rev 0; 9/02 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873A is implemented in Maxim’s secondgeneration SiGe process and consumes only 260mW at 3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN

230 to 24 v converter CENTER TAP transformer

Abstract: MAX5873 MAX5874 MAX5875 MAX5875EVKIT MAX5876 MAX5877 MAX5878
Contextual Info: KIT ATION EVALU E L B AVAILA 19-3515; Rev 0; 2/05 16-Bit, 200Msps, High-Dynamic-Performance, Dual DAC with CMOS Inputs Selector Guide PART RESOLUTION Bits UPDATE RATE (Msps) LOGIC INPUTS ♦ On-Chip +1.20V Bandgap Reference ♦ Low 260mW Power Dissipation

Contextual Info: 19-2087; Rev 0; 9/02 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873A is implemented in Maxim’s secondgeneration SiGe process and consumes only 260mW at 3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN

Contextual Info: 19-2087; Rev 0; 7/01 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873 is implemented in Maxim’s second-generation SiGe process and consumes only 260mW at +3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN

Contextual Info: 19-2087; Rev 0; 7/01 Low-Power, Compact 2.5Gbps/2.7Gbps Clock-Recovery and Data-Retiming IC The MAX3873 is implemented in Maxim’s second-generation SiGe process and consumes only 260mW at +3.3V supply output clock disabled, low output swing . The device is available in a 4mm x 4mm 20-pin QFN

2770VA

Contextual Info: RS SERIES INDUSTRIAL RELAYS 15.6 .614 UL & CUL File #E223388 FEATURES 0.3(.012) High dielectric strength 1000VAC between open contacts and 4000VAC between coil and contact. Miniature size 18.5x10.4×15.6. Nominal power 200mW~450mW. Operating power 120mW~260mW.

Contextual Info: US6J11 Pch -12V -1.3A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 1.0W lFeatures (6) (5) TUMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6).

Contextual Info: RS SERIES INDUSTRIAL RELAYS 15.6 .614 UL & CUL File #E223388 FEATURES 0.3(.012) High dielectric strength 1000VAC between open contacts and 4000VAC between coil and contact. Miniature size 18.5x10.4×15.6. Nominal power 200mW~450mW. Operating power 120mW~260mW.

Contextual Info: RW1A013ZP Pch -12V -1.3A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 0.7W lFeatures (6) (5) WEMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode.

Contextual Info: US6J11 Pch -12V -1.3A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 1.0W lFeatures (6) TUMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6).

Contextual Info: LASER DIODES ML6xx71 LD SERIES FOR MOTION SENSOR TYPE NAME ML60171C DESCRIPTION FEATURES Mitsubishi ML6xx71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 827 nm and standard light output of 260mW. This LD has narrow-stripe structure which enables

organic light emitting diode

Contextual Info: LASER DIODES ML6xx71 LD SERIES FOR MOTION SENSOR TYPE NAME ML60171C DESCRIPTION FEATURES Mitsubishi ML6xx71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 827 nm and standard light output of 260mW. This LD has narrow-stripe structure which enables

Contextual Info: RW1A013ZP Datasheet Pch -12V -1.3A Power MOSFET lOutline VDSS -12V RDS on (Max.) 260mW ID -1.3A PD 0.7W lFeatures (6) WEMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode.

B82462G

Contextual Info: Actual Size 5,0 mm x 6,4 mm Actual Size (4,15 mm x 4,15 mm) www.ti.com TPS61120 TPS61122, TPS61121 SLVS427C – JUNE 2002 – REVISED APRIL 2004 SYNCHRONOUS BOOST CONVERTER WITH 1.1A SWITCH AND INTEGRATED LDO FEATURES • • • • • • • • •

1108X

Abstract: 110833
Contextual Info: V ~ le lu o m Semiconductor, Inc. TC1108 300mA CMOS LDO FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1108 is a fixed output, high accuracy typically ±0.5% CMOS low dropout regulator. Total supply current is typically 50|iA at full load (20 to 60 times lower than in bipolar

sot-223 code marking rt

Abstract: TC1108 pcb thermal sot-223 3L
Contextual Info: ¡eluom Semiconductor. Inc. TC 1108 300m A CMOS LDO FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC 1108 is a fixed output, high accuracy typically ±0.5% CMOS low dropout regulator. Total supply current is typically 50(aA at full load (20 to 60 times lower than in bipolar

QFN-16

Abstract: TPS61120 TPS61120PW TPS61121 TPS61121PW TPS61122 TPS61122PW TSSOP-16 amplifier mp3 player
Contextual Info: Actual Size 5,0 mm x 6,4 mm Actual Size (4,15 mm x 4,15 mm) www.ti.com TPS61120 TPS61122, TPS61121 SLVS427C – JUNE 2002 – REVISED APRIL 2004 SYNCHRONOUS BOOST CONVERTER WITH 1.1A SWITCH AND INTEGRATED LDO FEATURES • • • • • • • • •

Contextual Info: P R E LIM IN A R Y D E V IC E SP E C IFIC A T IO N SO N E T /S D H /A TM C LO C K RECOVERY UNIT FEATURES • Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation • On-chip high frequency PLL with internal loop

H11D1

Abstract: H11D1X H11D2 H11D2X H11D3 H11D3X H11D4 H11D4X
Contextual Info: H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 6 1 2 5

marking NY sot-223

Abstract: 200B DK-2750 TC1108
Contextual Info: TC1108 300mA CMOS LDO Features General Description • • • • • • The TC1108 is a fixed output, high accuracy typically ±0.5% CMOS low dropout regulator. Total supply current is typically 50µA at full load (20 to 60 times lower than in bipolar regulators).

Contextual Info: HI5766 Semiconductor Data Sheet February 1999 File Number 4130.5 10-Bit, 60 MSPS A/D Converter Features The HI5766 is a monolithic, 10-bit, analog-to-digital converter fabricated in a CMOS process. It is designed for high speed applications where wide bandwidth and low

ADC10D1500

Abstract: LMH6554LE LMH6554LEE LMH6554LEX LEE14A
Contextual Info: LMH6554 2.8 GHz Ultra Linear Fully Differential Amplifier General Description Features The LMH6554 is a high performance fully differential amplifier designed to provide the exceptional signal fidelity and wide large-signal bandwidth necessary for driving 8 to 16 bit high