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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz |
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TIM1414-8L 25GE12 MW50320196 414-8L |