2581 V AMPLIFIER Search Results

Contextual Info: C2500 Series EURO CASSETES 3 0 0 - 4 0 0 W AT T S A C / D C - D C / D C - B AT T E R Y C H A R G E R S S I N G L E O U T P U T FEATURES • • • • • • • DC input 18 V - 380 V AC input 1 or 3-phase, 47 - 400 Hz DC output 5-290V Continuous short circuit protection

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-Em itter Voltage C ollector-Base Voltage Em itter-Base Voltage Symbol Value Unit v CEO 50 Vdc VCBO 60 Vdc v EBO 6.0 Vdc Collector Current — Continuous

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 1 EMITTER M AXIM UM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage VCEO 50 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-B ase Voltage v EBO 6.0 Vdc

Mullard

Abstract: EBC33 ra 220 diode
Contextual Info: DOUBLE DIODE TRIO DE EBC33 M edium gain triode for use as A.F. voltage amplifier and combined with twin diodes. H EATER This valve is suitable for D C / A C operation. V„ lb 6.3 0.2 V A C A P A C IT A N C E S C ad '-k C ad'V k C a d '- a d " C ad '-g C ad"_g

D 2578 equivalent

Abstract: MRF1090MA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F1090M A M R F1090M B The RF Line M ic ro w av e Pulse P o w er Transistors . . . designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

induction heating oscillator circuit

Abstract: induction heater circuit "Power Triode" induction heating oscillator Induction heater transmitting triode 30 kw induction heater INDUCTION HEATING POWER SUPPLY Power Triode Mullard
Contextual Info: R.F. P O W E R T R iO D E TYS5-3000 R.F. power triode in silica envelope, rated for an anode dissipation o f 3.5 kW . Primarily intended as a self-excited oscillator in R.F. heating equip­ ment, but also suitable for use as R.F. amplifier in transmitting

44355

Abstract: ups 2581 v
Contextual Info: MITEQ AM-1367 SERIES AMPLIFIER FREQUENCY MHz 20–3000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1367 38 1.25 2.2:1 50/50 6 18 41 21 40 20 260 3 19 39 P1dB Gain (dB) 15

c 2579 power transistor

Abstract: hf power transistor NPN c 2579 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.

transistor D 2581

Abstract: ERIE CAPACITORS TYPE K ERIE CAPACITORS N5060 erie .33 400 Erie TRIMMER CAPACITOR CAPACITOR MURATA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor D e sign e d for 12.5 Volt U H F large-signal, com m on emitter, c la s s - C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. • Specified 12.5 Volt, 512 M H z Characteristics

Philips taw 12 20

Abstract: TAW12 kiv 78 kss 210 ML1220 E707
Contextual Info: TAL 12/20 TAW 12/20 PHILIPS TRIODE for use as H*F. amplifier and oscillator TRIODE pour utilisation comme amplificatrice H*F. et oscillatrice TRIODE zur Verwendung als H*F* Verstärker und Oszil­ lator TAL 12/20 TAÏÏ 12/20 Cooling : forced air Refroidissement: à air forcée

HA5190

Abstract: HA2-5190-2 HA-5190 5195-5 THERMALLOY 2268b
Contextual Info: Œ HA-5190, HA-5195 Wideband, Fast Settling Operational Amplifiers March1993 Features Description • Fast Settling Time 0 .1 % . 70ns • Very High Slew R a te . 200V/ns •

AS150A

Contextual Info: h a r ris S E M I C O N D U C T O R Œ HA-5190, HA-5195 " * 7 Wideband, Fast Settling Operational Amplifiers March 1993 Features Description • Fast Settling Time 0 .1 % . 70ns HA-5190/5195 are monolithic operational amplifiers

HARRIS 5195

Abstract: ha5195-5 HA2-5190-2 HA1-5195-5 HA5190 5195-5 2268B harris ha-5195 X1320
Contextual Info: HARRIS SEMICON] SECTOR blE » • 4302271 004L.743 10b « H A S HA-5190, HA-5195 33 Wideband, Fast Settling Operational Amplifiers March1993 Features • Description Fast Settling Tim * 0.1% ).70ns • Very High Slaw R a ta .200V/ns

Contextual Info: RF5117 Preliminary 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery-Powered Equipment • Wireless LAN Systems • Spread-Spectrum and MMDS Systems

Contextual Info: RF5117 Preliminary 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery-Powered Equipment • Wireless LAN Systems • Spread-Spectrum and MMDS Systems

Contextual Info: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

b137 transistor

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

b137 transistor

Abstract: RF5117 54MBPS 2483MHz
Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications

capacitor 22 pF

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications

SiGe 2577

Abstract: RF5117 laptop mini pci slot pin details 54MBPS RF5117PCBA-41X 41dBm
Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications

Contextual Info: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems