256X8 CMOS RAM Search Results

Contextual Info: 256x8 Bit Static CMOS RAM NMOS-Compatible SAE81C52 Preliminary Data Type 0S A E 81C 52P 0S A E 81C 52G CMOS IC Ordering Code Package Q67100-H8003 Q67100-H8004 P-DIP-16 P-DSO-20 SMD The SAE 81C52 is a CMOS silicon gate, static random access memory (RAM), organized

Contextual Info: SIEMENS 8-Bit CMOS Microcontroller Family C511 C511A C513 C513A C513A-H Preliminary • Fully software compatible to standard 8051/8052 microcontrollers • Up to 12 MHz operating frequency • Up to 12 K x8 ROM / EEPROM • Up to 256x8 RAM • Up to 256 x 8 XRAM

Contextual Info: IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240 CMOS SyncFIFO 6 4 x 8 , 256x8, 512x8, 1024 x 8, 2048 x 8 and 4096 x 8 DESCRIPTION: FEATURES: 64 x 8-bit organization IDT72420 256 x 8-bit organization (IDT72200) 512 x 8-bit organization (IDT72210)

PSC-2042

Contextual Info: CMOS SyncFlFO 6 4 x 8 , 256x8, 512x8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 Hhtegiated D ev ize T ech n ology, l i e . IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240 DESCRIPTION: FEATURES: 64 x 8-bit organization IDT72420 256 x 8-bit organization (IDT72200)

Contextual Info: CMOS SyncFlFO 6 4x 8 , 256x8, 512x8, 1024 x 8, 2048 x 8 and 4096 x 8 Integrated Device Technology, Inc. FEATURES: IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240 SyncFlFO™ are very high-speed, low-pow er First-In, FirstOut FIFO mem ories with clocked read and write controls.

e1105

Abstract: E1105 E3
Contextual Info: CMOS SyncFlFO 6 4 x 8 , 256x8, 512x8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 In te g r a te d D e v iz e T e c h n o lo g y , l i e . IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240 DESCRIPTION: FEATURES: 64 x 8-bit organization IDT72420 256 x 8-bit organization (IDT72200)

26B0

Abstract: DT72230
Contextual Info: CMOS SyncFlFO 6 4 x 8, 256x8, 512x8, 1024 x 8,2048 x 8 and 4096 x 8 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • • • IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240 SyncFlFO™ are very high-speed, low-pow er First-In, FirstOut FIFO mem ories with clocked read and write controls.

TLCS-48

Abstract: intel 8039 40 PIN DIP tmp8039
Contextual Info: 8-BIT MICROCONTROLLERS TLCS-48 Series CMOS/NMOS FEATURES • Memory • Additional Functions (1) Max. 4K byte ROM and 2 5 6 byte RAM (4) 8-bit interval timer/event counter • Processor (2) Software and pin compatible with Intel’s 8 0 4 8 series (3) 9 6 /9 7 instructions, min. 2 .5/1.3 6 jxs at 6/11 M H zocs.

TMP8035P

Abstract: I8039 intel 8048 processor 8048 intel 8035 P80C49 TMP8035AP TMP8035PI TMP8039AP TMP8039PI-6
Contextual Info: 8-BIT MICROCONTROLLERS TLCS-48 Series CMOS/NMOS FEATURES • Memory • Additional Functions (1) Max. 4K byte ROM and 2 5 6 byte RAM (4) 8-bit interval timer/event counter • Processor (2) Software and pin compatible with Intel’s 8 0 4 8 series (3) 9 6 /9 7 instructions, min. 2 .5/1.3 6 jxs at 6/11 M H zocs.

Contextual Info: TC518512FL 1/2 IL00 * C-MOS 524,288WORDX8 BIT STATIC RAM -TOP VIEW12 A18 IN 1 VDD(+5V) 32 11 10 A16 31 A15 IN 2 IN 9 8 30 A17 IN A14 IN 3 7 6 A12 IN 4 29 R/W A7 IN 5 28 A13 IN 5 27 26 23 A6 IN 6 27 A8 IN 25 IN 7 26 A9 IN 28 A4 IN 8 25 A11 IN 31 4

TMC17C

Abstract: 100-QFP 92-QFP TMC17A
Contextual Info: EPROM for Flat Piggyback Type T4773 Structure Max. Access Time ns 32768 x 8 250 Max. Power Dissipation (mA) Active I Stand-by 30 0.1 Write Voltage (V) Supply Voltage (V)

Contextual Info: 7^2^237 / = 7 ^ 7# O□ 4 4 bSLf HIS •SGTH S G S - 1H O M S O N Ü O ffiO ilE Ë W M O Ê i IM S G 33 2 COLOR VIDEO CONTROLLER PRODUCT OVERVIEW FEATURES APPLICATIONS Video rates up to 110MHz 1 ,2 ,4 and 8 bit pseudo color pixels 15 or 16 bit true color with gamma correction

LC864012B

Abstract: LC864024A LC86000 LC864012 64Kx8 RAM 64Kx8 CMOS RAM DIP52S 16kx8
Contextual Info: CMOS 8-Bit Single-Chip Microcomputers LC864000 Series Overview The LC864000 Series are high-speed, advanced-function CMOS 8-bit single-chip m icrocontrollers with an on-chip caption display function. When combined with a data slice front-end 1C LA7945 , the previous products — the

Contextual Info: IIIIICRTRLY5T • III / Prelim inary S E M I C O N D U C T O R CAT24C02/CAT24C02I 2K-Bit SERIAL E2PROM FEATURES ■ PC Bus C o m p atib le* S e lf Tim ed Prog ram m in g C ycle w ith A u toerase ■ Low Pow er C M O S Tech no log y 100,000 E rase/W rite Cycles

1802AF

Abstract: S1802 ROM80 S18P02AF pe07
Contextual Info: 目 次 特 長･････････････････････････････ 用 途･････････････････････････････ 仕様･･･････････････････････････････

SAB 8051 p

Abstract: semiconductor smd ad 5.9 p35 SMD 6 PIN IC
Contextual Info: SIEMENS 256 x 8-Bit Static CMOS RAM NMOS-Compatibie SAE 81C52 Preliminary DataCMOS IC P Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families SAB 8086, SAB 8051

D8748D

Abstract: PD7801G PD650C UPD650C D8748 PD8749HD UPD8048HC d7810 64x8 PD7503G
Contextual Info: N E C ELECTRONICS INC STC D • b427525 OOOblDM 7 ■ • 4 -B it S in g le -C h ip M ic ro c o m p u te rs i Type No. /{PD650C / PD651C /(COM43C Series Process Supply Voltage (V Instruction Time (¡is) CMOS +5 10 /(PD652C /í PD7502G Í(PD7503G 2 0 -1 0

UPD650C

Abstract: UPD7503G PD7800G 8049C 224X4 MPD7802G mPD8253 PD7811G upd652c UPD650
Contextual Info: N E C E L E C T R O N I C S INC STC D • b427525 000bl04 7 ■ • 4-Bit Sing le-C hip M icro co m p u ters i Type No. Process Supply Voltage V Instruction Time (¡is) ROM x8 2k CMOS +5 10 1k 64x4 1k /{PD650C /(COM43C Series /(PD651C /íPD652C /í PD7502G

Contextual Info: Preliminary CMOS SRAM K6F2008T2E Family Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark June 16 , 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: IDT72200L-25TP 1/2 * C-MOS FIFO 256x8-BIT DUALPORT MEMORY -TOP VIEW- D4 1 28 D5 D3 2 27 D6 D2 3 26 D7 D1 4 25 RS D0 5 24 WEN AF 6 23 WCLK AE 7 8 GND VDD 22 (+5V) D0 D1 D2 D3 D4 D5 D6 D7 Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 11 OE 9 RCLK 10 REN 23 WCLK RS WEN 25

K6F2008U2E

Abstract: K6F2008U2E-YF55 K6F2008U2E-YF70
Contextual Info: K6F2008U2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: K6F4008V1D Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 16, 2000 Preliminary 1.0 Finalized - Change for tWHZ: 25 to 20ns for 70ns product

K6F2008V2E-YF55

Contextual Info: CMOS SRAM K6F2008V2E Family Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 19 , 2001 Preliminary 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: Preliminary CMOS SRAM K6F8008R2B Family Document Title 1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark October 31, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and