256X4 CMOS RAM Search Results

Contextual Info: CAT22C12! CAT22C121 - Industrial Temperature 1024-BIT 256x4 NONVOLATILE CMOS STATIC RAM DESCRIPTION FEATURES The Catalyst CAT22C121 Nonvolatile Random Ac­ cess Memory (NVRAM) is a 1024-bit device with a 256x4 organization. It features fully static CMOS

CAT22C12

Contextual Info: CAT22C12 CAT22C12 1024-BIT 256x4 NONVOLATILE CMOS STATIC RAM FEATURES DESCRIPTION The Catalyst CAT22C12 Nonvolatile Random Ac­ cess Memory (NVRAM) is a 1024-bit device with a 256x4 organization. It features fully static CMOS circuitry for very low power consumption. The ac­

Contextual Info: A M _ S6501 I 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256x4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­

Contextual Info: STATIC CMOS RAMs, COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGE DESCRIPTION PART TAA ns PACKAGES/PINS SIZE NUMBER P J S PP 22 P93U422 35 24 256x4 1K P4C422 22 10/12/15/25/35 24 256x4 1K P4C147 18 10/12/15/20/25 4Kx1 w/Separate I/O 4K P4C148 18 10/12/15/20/25

Contextual Info: A M I _ S6501 AMERICAN 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256 x 4-bit ultra low power CMOS RAMs offers fully static operation with a single

S5101L-3

Abstract: S5101L-1
Contextual Info: AMI S5101 AMERICAN MICROSYSTEMS. INC. 1024 BIT 256X4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S5101 family of 256x 4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­

HM435101

Abstract: MCM5101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01
Contextual Info: 8 < > MOTOROLA MCM5101 MCM51L01 256x4 BIT STATIC RAM CMOS The MCM5101 fam ily o f CMOS RAMs offers ultra low power and ful­ ly static operation w ith a single 5-volt supply. The CMOS 1024-bit devices are organized in 256 words by 4 bits. Separate data inputs and

S6501

Abstract: c i S6501 S6501-8 S6501L S6501L1 S6501L3 S6501L8 256X4 CMOS RAM
Contextual Info: S6501 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256x 4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­

Contextual Info: Xicnr Advance Information 1KBit X22C12 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 120 ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption — Active: 40 mA Max.

Contextual Info: w X22C12 1KB it X22C12 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 150ns RAM Access Time * High Reliability —Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption —Active: 40mA Max. — Standby: 100|jA Max.

Contextual Info: Jlaar X22C12 1KBit 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 150ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years • Low Power Consumption — Active: 40mA Max. — Standby: 100^iA Max.

Contextual Info: Advance Information 1KBit X iB B X22C12 ! 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION • High Performance CMOS — 120 ns RAM Access Time • High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years • Low Power Consumption — Active: 40 mA Max.

S5101L1

Abstract: S5101L-3 S5101 s5101l s5101-8 S5101L3 S5101L-1
Contextual Info: AMI S5101 AM ERICAN M ICR O SYST EM S, INC.I 1024 BIT 256X4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power □ Data R etention at 2V (L Version) □ Single +5 Volt Power Supply □ Completely Static Operation □ Completely TTL Compatible Inputs

Contextual Info: GEC PLESSEY S V M I c; O N l IJ , I () K m a s io i Radiation Hard 256x4 Bit Static RAM s S10304FDS Issue 1.2 October 1990 Features • 3|im CMOS-SOS technology — — Address Butler» • Latch-up free Cell Array 32 R o m tt Columns Row Decoders (Enable)

5101-4

Abstract: 2101 256x4
Contextual Info: g g g # 8 8 3 /5 1 0 1 -4 256x4 Static CMOS RAM s c ie n tific Features Pin Configuration • Military Temperature Range: - 5 5 ° C t o + 125°C A3 I 1' ■ Low Power Replacement for 2101 NMOS RAMs a ■ Data retention to 2.0V ■ TrueTTL C om patibility

d5101l

Abstract: PD5101L upd5101 5101L-4 mpD5101 5101L
Contextual Info: MPD5101L SEC N E C E le c tr o n ic s U S A In c . m PD51o i h Microcomputer Division 1024 BIT 256x4 STATIC CMOS RAM DESCR I P T I O N T h e /UPD5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f

16kx8 ram

Abstract: 8096 microcontroller features rom 1024 1024x8 MSM6411B 8096 microcontroller serial ports MSC62408 MSC6458 NS400N seg lcd driver rom 512x4
Contextual Info: • LINE-UP AND TYPICAL CHARACTERISTICS •- LINE-UP AND TYPICAL CHARACTERISTICS LOW POWER HIGH SPEED OLMS-50/60 SERIES PRODUCT NAME ROM OLMS-64/65 SERIES RAM POWER CONSUMP­ TION FEATURES RAM ROM MACHINE CYCLE FEATURES MSM6404 4000 x 8 256x4 952 nS I/O: 36

27C32A

Abstract: mb88514b mb 88525 MB8850 DP42C-P03 88558-CF-1036 fujitsu series MB MDP-64C-P01 8840H MB88418H-C-101
Contextual Info: •• FUJITSU MICROELECTRONICS -1?D D ~ • 374T?fa2 QQQHSñb 4 » F R I ; T-90-60 ” T-49-19-59 . Table 4; PIGGYBACK EPROM TYPE EVALUATION DEVICES FOR THE FUJITSU 4-BIT FAMILY 1 Applicable Series/ Devices Process Piggyback EPROM External ROM Size tbits]

32-768K

Abstract: 4-Bit Microcontrollers OLMS64K 800FP 23seg K D S 32.768 khz OLMS-64 32768K
Contextual Info: f OKI Semiconductor O TYPICAL CHARACTERISTICS • OLMS-50/60/63 Family 4-Bit Microcontrollers Model Function Built-in Temperature Circuit and LCD Driver MSM5052 P ro cess Supply Voltage V ROM Capacity (Bits) CMOS 1.5 1 2 8 0 x 14 RAM I/O Operating instruction' Input

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

LC-6

Abstract: LC6500 LC6554
Contextual Info: CMOS 4-Bit Single-Chip Microcomputers LC6500 Series Overview The LC6500 Series CMOS 4-bit single-chip microcom­ puters were developed for small- to medium-scale products. They contain a common CPU, 0.5K to 8K bytes of ROM, 32 to 448 words of RAM, a timer, a clock generator, and highwithstand voltage ports on-chip FLT driver/controller that

S45C

Abstract: 4x2 LCD DP-64S HMCS45A hitachi pmos microcomputer LCD 1X16 DP-42 HMCS45C HMCS46C HMCS47C
Contextual Info: • OUTLINE OF HMCS40 SER IES MICROCOMPUTER ■ HMCS40 SER IES PACKAGE LC D-D river CMOS Low Power Consumption CMOS High-Voltage 0 .5 K HMCS45A IOS 3 !V/10mA ¡V/3mA 0-+75* - 54/DP-64S 48 x 10 8 x1 0 *’ 0x4 - 4x1 - 4x6 1x16 s HMCS45C 1K HMCS46C 4K ROM Word)

88516b

Abstract: mb88515b MB88511 MB88411 88202-P BB413 MB88201 256X4 MB88515B-P-SH MB88541-PF
Contextual Info: FUJITSU MIC ROE LE CT RON IC S ^71 D • 374^7^2 0004570 0 « Fi ll T-90-60 April 1988 Edition 3.0 4-Bit Microcontrollers and Peripherals Table 1: FU JIT SU 4-BIT MCU F A M IL Y Process/ Series NMOS MB 8840 Series CMOS MB 8850/H MB 8850B Series CMOS MB 88200/H

Contextual Info: 'F 'f Z - H f niET EC A L C A TE L 45E D • fc>15ñb51 GOOOGlfl T ■ MTEC 1.5 1 CMOS Standard Cell Library MTC-800 Services Features • Silicon-Gate 1.5 Micron CMOS Technology • Fully supported by MADE • Extensive M acrocell Library • ROMs, RAMs and other