256X16 Search Results

256x16* STATIC RAM

Abstract: c28w Video RAM SIO12 AK5216128WV-10 AK5216128WV-12 AK5216128WV-80 SIo-12 BY164 48aa50
Contextual Info: ACCUTEK MICROCIRCUIT 31E D • 01071=47 GOGOCia? T ■ ACU T -4 6 -2 3 -2 0 ACCUTEK MICROCIRCUIT AK5216128WV 128Kx 16/256x16 Dual Port Video Ram The Accutek AK5216128 is a 2 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 128Kx16 DRAM

72125

Contextual Info: CMOS PARALLEL-TO-SERIAL FIFO 256x16, 5 1 2x 16 ,1 024 x16 IDT72105 IDT72115 IDT72125 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The IDT72105/72115/72125s are very high-speed, lowpower,dedicated, parallel-to-serial FIFO s. T hese FIFO s

Contextual Info: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

se 140

Contextual Info: MOSEL M S 72105 / 72115 256x16 & 512x16 Parailel-to-Serial FIFOs PRELIMINARY FEATURES DESCRIPTION • 2 5n s para lle l p ort a ccess tim e The M S 7 21 0 5 and M S 7 21 1 5 are hig h -sp ee d , low pow e r 16-bit p a ra lle l-to -se ria l FIFO s. T h e se FIFO s a re w ell su ited fo r any

25616

Abstract: IN93AA66A
Contextual Info: IN93AA66N, IN93AA66D 4K-BIT SERIAL EEPROM WITH MICROWIRE INTEFACE compatible to САТ93С66 Catalyst DESCRIPTION The IN93LC66 is a Electric erasable programmable ROM (EEPROM) memory data capacity 4K (512x8 or 256x16) with 3-wire interface. There are 3 modification of ICs

IDT7212

Contextual Info: CMOS PARALLEL-TO-SERIAL FIFO 256x16, 5 1 2 x 1 6 , 1 0 2 4 x 1 6 IDT72105 IDT72115 IDT72125 Integrated Device Technology» Inc. FEATURES: DESCRIPTION: • • • • • The IDT72105/72115/72125s are very high speed, low power dedicated parallel-to-serial FIFOs. These FIFOs

BR6216A-15L

Abstract: EEPROM Capacity 24L04 2864a-25 BR6216A
Contextual Info: 7fl5fl'ì'ìcì ODDbTOB 711 Memory ICs ROHM CO LTD [EEPROM 5bE D •Serial EEPROM Capacity Type Bit) Composition (Woid X Bit) BR 93LC 46/F 1K BR93LC46A/AF 64X16 2K BR 93LC 56/F vire iystem 128x16 BR93LC56A/AF BR9041A/ARF 4K BR93LC66/RF 256X16 BR93LC66A/ARF

72125

Contextual Info: IDT72105 IDT72115 IDT72125 CMOS PARALLEL-TO-SERIAL FIFO 256x16, 51 2x1 6, 1 02 4 x1 6 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The IDT72105/72115/72125s are very high-speed, lowpower,dedicated, parallel-to-serial FIFOs. These FIFOs

Contextual Info: K3N3V U 1000D-TC(E) CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

59C22

Contextual Info: Features • Low Voltage and Standard Voltage Operation - 5.0 Vcc = 4.5V to 5.5V - 2.7 (Vcc = 2.7V to 5.5V) - 2.5 (Vcc = 2.5V to 5.5V) • User Selectable Internal Organization - 1K: 12 8x 8 or 64x16 - 2K: 2 5 6 x 8 or 128x16 - 4K: 5 1 2 x 8 or 256x16 • 4-Wire Serial Interface

Nexflash

Abstract: NX29F400B NXPF003B-0701 00000H-01FFFH 48-pin TSOP standard NX29F 555H AAAH
Contextual Info: NX29F400B 4M-BIT 512x8 or 256x16 CMOS, 5.0V Only HIGH SPEED SECTOR FLASH MEMORY MARCH 2001 ADVANCED FEATURES • Ultra-fast Performance – 55, 70, and 90 ns max. access times • Temperature Ranges – Commercial 0oc-70oc – Industrial -40oc-85oc • Single 5V-only Power Supply

Contextual Info: MOSEL M S 7 2 1 05/ 72115 256x16 & 512x16 Parallel-to-Serial FIFOs PRELIMINARY DESCRIPTION FEATURES 25ns parallel port access time 50MHz serial output port shift rate Easily expandable in both word width and depth Asynchronous and simultaneous read/write operation

FM93C66

Abstract: FM93C66E FM93C66V M08A MTC08
Contextual Info: SEM ICONDUCTOR TM 4K-Bit Serial CMOS EEPROM FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface Features The FM93C66 device is 4096 bits of CMOS non-volatile electri­ cally erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

Contextual Info: K3N3V U 1000D-TC(E) CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

AT59C12

Abstract: AT59C11-10PC AT59C11 AT59C11-10SC AT59C13 64X16 AT59C13-10SI
Contextual Info: AT59C11/12/13 Features • Low Voltage and Standard Voltage Operation 5.0 V Vcc = 4.5 V to 5.5 V 3.0 V (Vcc = 2.7 V to 5.5 V) User Selectable Internal Organization 1K: 12 8x 8 or 64 x1 6 2K: 256 x 8 or 128x16 4K: 5 1 2 x 8 or 256x16 Four-Wire Serial Interface

Contextual Info: s e m ic o n d u c t o r FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE™ Bus Interface General Description Features The FM93C66 device is 4096 bits of CMOS non-volatile electri­ cally erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

72125

Contextual Info: IDT72105 IDT72115 IDT72125 CMOS PARALLEL-TO-SERIAL FIFO 256x16, 51 2x1 6, 1 02 4 x1 6 Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • • • • • 25ns parallel port access time, 35ns cycle time 4 5 M H z serial output shift rate W ide x16 organization offering easy expansion

256X16-BIT

Abstract: TCJ 5PIN uCOM-43 instruction uCOM-43 ucom43 BR93LC66A
Contextual Info: BR93LC66/BR93LC66RF/BR93LC66A/BR93LC66ARF BR93LC66/BR93LC66RF/BR93LC66A BR93LC66ARF 256X16Bit y U T U EEPROM 256X16Bit Serial EEPROM BR93LC66/BR93LC66A l i , CMOS '> ' TJb I/O M"j 256 7 - KX16 $ -f C 7 0 7 7 A n jfé 4 [J i • ^ J f^ ü H /D im e n s io n s Unit : mm)

KM23V4100D

Abstract: KM23V4100DET KM23V4100DT
Contextual Info: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

Contextual Info: BR93LC66 BR93LC66A 256X16 bit serial EEPROM BR93LC66RF BR93LC66ARF The BR93LC66/RF and BR93LC66A/ARF are CMOS serial input/output-type memory circuits EEPROMs that can be programmed electrically. Each can store up to 4096 bits in 256 sixteen bit words. Each word can be

dl6 laser lans

Abstract: zaro 72125
Contextual Info: CMOS PARALLEL-TO-SERIAL FIFO 256x16, 51 2x 1 6 ,1 0 2 4 x 1 6 IDT72105 IDT72115 IDT72125 Integrated Device Technology* Inc. FEATURES: DESCRIPTION: • • • • • The IDT72105/72115/72125s are very high speed, low power dedicated parallel-to-serial FIFOs. These FIFOs

Contextual Info: AT59C11/22/13 Features • Low Voltage and Standard Voltage Operation 5.0 Vcc = 4.5V to 5.5V 2.7 (Vcc = 2.7V to 5.5V) 2 5 (Vcc = 2.5V to 5.5V) 1.8 (Vcc = 1.8V to 5.5V) • User Selectable Internal Organization 1K: 128x8 or 64x16 2K: 256 x 8 or 128x16 4K: 512x8 or 256x16

KM23V4100D

Abstract: KM23V4100DET KM23V4100DT 256x16 rom
Contextual Info: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

CI-255

Abstract: GMW25616LA NR30 16x16-dot Mercator iee vfd
Contextual Info: QZio. MERCATOR VFD MODULES GMW25616LA GMW25616LA • • • • • • Static Active Matrix VFD Module 256x16 Fine Dot Matrix 135mm x 22mm PCB Dimension Low Operating Voltage 15VDC Ultra High Brightness Display Low RFI Static Display Operating Temperature -40 to +85°C