256KX16 ZIP Search Results

256kx16 ucas zip

Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance

EM742SP16

Contextual Info: EM742SP16 256Kx16 Multiplexed STRAM Document Title 256K x 16Bit Multiplexed Single Transistor RAM Revision History Revision No. History Draft Date Remark December 21 , 2006 Preliminary 0.0 Initial Draft 0.1 1’st Revision Add to pad coordinate March 07, 2007

EM641FU16E

Abstract: 256Kx16 bit Low Power full CMOS Static RAM
Contextual Info: merging Memory & Logic Solutions Inc. EM641FU16E Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft August 5 , 2002 0.1 2’nd Draft

EM646FV16FU

Contextual Info: merging Memory & Logic Solutions Inc. EM646FV16FU Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft June 2 ,2003 0.1 2’nd Draft

EM645FV16FU

Abstract: 256KX16
Contextual Info: merging Memory & Logic Solutions Inc. EM645FV16FU Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft June 2 ,2003 0.1 2’nd Draft

EM643FV16FU

Contextual Info: merging Memory & Logic Solutions Inc. EM643FV16FU Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 0.1 2’nd Draft Draft Date May 26 , 2003

EM641FP16

Contextual Info: merging Memory & Logic Solutions Inc. EM641FP16 Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark October 24 , 2002 Preliminary 0.0 Initial Draft

EM640FP16

Contextual Info: EM640FP16 Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft October 24 , 2002 0.1 2’nd Draft Changed Icc, Icc1 value November 11 , 2002

EM644FV16FU

Contextual Info: merging Memory & Logic Solutions Inc. EM644FV16FU Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 0.1 2’nd Draft Draft Date May 26 , 2003

EM640FU16E

Contextual Info: merging Memory & Logic Solutions Inc. EM640FU16E Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft 0.1 2’nd Draft Changed Icc, Icc1 value & 55ns product tDW value

Contextual Info: MICRON SEMICONDUCTOR INC b3E D • blll54T DGDflb3fl 302 HIMRN M T 4C 16260/1 256KX16 W ID ED R A M MICRON I s e m ic o n d u c t o rin c WIDE DRAM 256K X 1 6 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages

EM640FV16FW

Contextual Info: EM640FV16FW Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft August 13 , 2003 Remark Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

dram zip 256kx16

Contextual Info: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5

dram zip 256kx16

Abstract: I8833C
Contextual Info: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2

256KX8 SIMM

Abstract: 512kx8 dram simm dram zip 256kx16 1mx8 DPS 119 61 sram 256kx8
Contextual Info: TABLE OF CONTENTS GENERAL PRODUCT INFORMATION Reference by S iz e . 4 Dense-Pac Microsystems Modules and M onolithics. 5

256KX8 SIMM

Abstract: 80 pin simm flash
Contextual Info: WDl Selector Guide ELECTRONIC DESIGNS INC. Density Organization Part No. Speed ns NEW Max Current (mA) ICC1 ICC3 ✓ ✓ V ✓ 256Kx8 2 2 4 4 256Kx8 256Kx8 512Kx8 512Kx8 512Kx8 Megabits Megabits Megabits Megabits EDI8F8257C-B6ClP EDI8F8257C-BPCLP EDI8F8259C-M6C

80 pin simm flash

Abstract: 45/EDI8F16256C-M
Contextual Info: \ Selector Guide ELECTRONIC DESI3NS INC Of nsity Organization Part No. Speed ns NEW ✓ ✓ ✓ ✓ Page LP Signifies that a Low Power Version with Data Retention function is available x8 SRAMs ✓ Package Max Current (mA) ICC1 ICC3 2: Megabits 256KX8 EDI8F8257C-B6CLP

TSC500

Abstract: Delco Electronics list of sensors used in automobile delco ic automotive Immobilizer rolling code TRC1300 delco car variable PWM by using dsp TMS320F240 TRF1400 engler level sensor
Contextual Info: INTEGRATION EXTENDING YOUR REACHTM NORTH AMERICAN EDITION C I A L E E S P NC E E G R E C ON V I S S U Convergence 1996 ▼ Booth No. 730 ▼ Oct. 21-23 ▼ Dearborn, Mich. Texas Instruments will showcase its digital signal processors, microcontrollers based on PRISM technology, Power+ ICs,

128kx8

Abstract: EDI88130 32 PIN edi84256
Contextual Info: moi Selector Guide ELECTRONIC DESIGNS INC. Density Oraanization Part No. Speed ns Max Current (mAl Packaae Paae x32 Flash 4 Megabits 4 Megabits 128KX32 4 Megabits 4 Megabits 128KX32 128Kx32 EDI7C32128C-JM EDI7M32128C-GB 120-200 120-200 250 250 68 lead JLCC

KM418C256

Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80

HM62V8512LFP

Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
Contextual Info: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-

KM41C4000AJ

Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
Contextual Info: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC