256K-BYTE SRAM Search Results

Contextual Info: M68AW256DL 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.3V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V

TSOP44

Abstract: UB 40 VDR 0047 M68AW256DL TFBGA48
Contextual Info: M68AW256DL 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V

M68AR256M

Abstract: TFBGA48
Contextual Info: M68AR256M 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V

M68AR256ML

Abstract: TFBGA48
Contextual Info: M68AR256ML 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V

IS61LPS51218A-200TQLI

Abstract: IS61LPS25636A IS61LPS25636A-200TQLI IS64LPS25636A-166TQLA3 IS61LPS25632A IS61LPS25636A-200B3I IS61LPS51218A IS61VPS25636A IS61VPS51218A IS61LPS25636A200B3I
Contextual Info: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

VDR 0047

Abstract: UB 40 M68AW256ML TFBGA48 TSOP44
Contextual Info: M68AW256ML 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.3V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V

PCMCIA SRAM Memory Card 512k

Abstract: 16-BIT dram card 60 pin 16-BH 128k sram card 60 pin battery TH6S1612A0A 243mA
Contextual Info: MEMORY CARD SRAM CARD Attribute memory type Pin Type TH6S type (68pin) Data Bus 16Bit Type No. X6 Memory Capacity (Byte) Memory Constitution TH6S1612A0A 256K 128K X 1 6 b it TH6A1625A0A 512K 256K X 1 6 b it Access Time ins) Current Operating 135 mA 150 Standby

GS78132A

Abstract: GS78132AB GS78132AB-10 GS78132AB-10I GS78132AB-12 GS78132AB-12I GS78132AB-8 GS78132AB-8I GS78132AGB-8 GS78132AGB
Contextual Info: GS78132AB 256K x 32 8Mb Asynchronous SRAM BGA Commercial Temp Industrial Temp Features 8, 10, 12 ns 3.3 V VDD Symbol Pin Descriptions Description A0 to A17 Address input CE Chip enable input DQA1 TO DQA8 Byte A Data input/output DQB1 TO DQB8 Byte B Data input/output

Contextual Info: IS61LPS25632T/D/J IS61LPS25636T/D/J IS61LPS51218T/DJ ISSI 256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINED, SINGLE-CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

Contextual Info: IS61LPD25632T/D/J IS61LPD25636T/D/J IS61LPD51218T/D/J ISSI 256K x 32, 256K x 36, 512K x 18 PRELIMINARY INFORMATION AUGUST 2002 SYNCHRONOUS PIPELINED, DOUBLE-CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

IS61LPS25632T-166TQ

Abstract: IS61LPS25632T-200TQ IS61LPS25632T-225TQ
Contextual Info: ISSI IS61LPS25632T/D/J IS61LPS25636T/D/J IS61LPS51218T/DJ 256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINED, SINGLE-CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

Contextual Info: IS61LPD25632T/D/J IS61LPD25636T/D/J IS61LPD51218T/D/J ISSI 256K x 32, 256K x 36, 512K x 18 PRELIMINARY INFORMATION SEPTEMBER 2002 SYNCHRONOUS PIPELINED, DOUBLE-CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: IS61SP25616 IS61SP25618 ISSI 256K x 16, 256K x 18 SYNCHRONOUS PIPELINED STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control using

Contextual Info: PRELIMINARY CYPRESS 128K/256K Cache Module for the UMC491 Chip Set Features • TTL-compatible inputs/outputs • 128 K-byte CYM9236 or 256 K-byte (CYM9237) secondary cache module organized as 32K by 32 o r 64K by 32 • Ideal for Intel 486-based systems

IS61LPS102418A

Abstract: IS61LPS25672A IS61LPS51236A IS61VPS102418A IS61VPS25672A IS61VPS51236A IS61LPS51236A-200TQLI
Contextual Info: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

j0810

Contextual Info: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

IS61LPS51236A-200TQLI

Contextual Info: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A ISSI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

IS61LPS102418A

Abstract: IS61LPS25672A IS61LPS51236A IS61VPS102418A IS61VPS25672A IS61VPS51236A IS61LPS51236A-200TQLI 1024Kx18
Contextual Info: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A ISSI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

X45620V20

Abstract: X45620V20I
Contextual Info: New Features Dual Supervisor Batt Switch & Output 256K EEPROM Dual Voltage Monitor with Integrated System Battery Switch and EEPROM X45620 • Minimize EEPROM programming time —64 byte page write mode —Self-timed write cycle —5ms write cycle time typical

Contextual Info: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A ISSI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

IS61LPD51218A

Contextual Info: IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

Contextual Info: ISSI IS61SF25616 256K x 16 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control

Contextual Info: ISSI IS61SP25616 256K x 16 SYNCHRONOUS PIPELINED STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control

Contextual Info: ISSI IS61SP25616 256K x 16 SYNCHRONOUS PIPELINED STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control