256D Search Results

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low

Contextual Info: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with

Contextual Info: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in

74HC244

Abstract: G9494-256D G9494-512D INP35 Ch252
Contextual Info: IMAGE SENSOR InGaAsリニアイメージセンサ G9494-256D/-512D 高速データレートの近赤外イメージセンサ 0.9~1.7 µm オンライン異物検査装置用の検出器として設計された近赤外／高速リニアイメージセンサです。各画素はパターン認識シ

Contextual Info: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors

Contextual Info: 3757 W. Touhy Ave., Lincolnwood, IL 60712 847 675-1760 • (847) 673-2850 · www.illcap.com +70°C Radial lead Supercapacitors Part Number: 256DLR2R3K This part is RoHS compliant Electrical Specifications Capacitance: 25F Tolerance: -10 %, +10 % ESR: 60 milliOhms at 120 Hz and 20°C

capacitive readout circuit G9494

Abstract: G9494-256D G9494-512D 74HC244 74HC244 shift register
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9494-256D/-512D Near infrared image sensor 0.9 to 1.7 µm with high-speed data rate HAMAMATSU provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These

Photodiode Array 32 element

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9494-256D/-512D Near infrared image sensor 0.9 to 1.7 µm with high-speed data rate HAMAMATSU provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These

G9204

Abstract: G9203-256D G9204-512D
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low

transistor KSP 56

Abstract: G8053-512D G8052-256D high frequency linear cmos IMAGE SENSOR charge amplifier array
Contextual Info: 2002. 3/19, K11-I5G004 InGaAs Linear Image Sensor G8052-256D, G8053-512D FEATURES ● Low cost ● 25um pitch 512ch, 50um pitch 256ch CMOS readout ● Low dark current ● Room temperature operation ● Cf selectable 10pF & 1pF APPLICATIONS DWDM monitor with Grating

Contextual Info: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with

Contextual Info: PART NUMBER: 256DCN2R7Q HIGH PULSE POWER, EXTENDS BATTERY LIFE PARTS ARE ROHS COMPLIANT FEATURES APPLICATIONS Radial lead, high capacitance. High power density Battery backup. Battery alternative. LED displays. Mechanical actuators ELECTRICAL SPECIFICATIONS

256X64

Abstract: 19045
Contextual Info: EDM25664A 1. 0 * * * * 1/64 Duty, 1/9 Bias 256Dots x 64 Dots Features Display Mode: Reflective/Transflective/Transmissive and Positive Type STN Input Data: 8-Bits Parallel Data Input from a MPU Assembly: SMT Backlight: Optional 2. 0 External Dimensions

Contextual Info: InGaAsリニアイメージセンサ G11135-256DD, G11135-512DE シングルビデオライン 256/512 画素 近赤外イメージセンサ (0.95 ～ 1.7 m)

Contextual Info: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in

photodiode linear array 256

Contextual Info: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9494-256D/-512D Near infrared image sensor 0.9 to 1.7 µm with high-speed data rate HAMAMATSU provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These

Contextual Info: InGaAsリニアイメージセンサ G9494-256D/-512D 高速データレートの近赤外イメージセンサ 0.9 ～ 1.7 m オンライン異物検査装置用の検出器として設計された近赤外／高速リニアイメージセンサです。各画素はパターン認識

Contextual Info: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors

Contextual Info: 256D-70 256D-85 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY DESCRIPTION T he T C 57H 256D is a 3 2 ,7 6 8 w o rd x 8 b it CMOS u ltra v io le t lig h t e ra s a b le a n d e le c tric a lly p ro g ra m m a b le re a d o n ly m em o ry . F o r re a d o p e ra tio n , th e T C 67H 280D ’s a c c e ss tim e

CSQ-255D

Abstract: CSQ-256D 255D
Contextual Info: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 0.25 inch 6.2mm Digit height. Case mold type Excellent character appearance Wide viewing angle Mechanical Dimension Typical Internal Equivalent Circuit TRIAD DIGIT DISPLAY CSQ-256D/255D Model no. § CSQ-256D/255D Super Bright Red

Photodiode Array 32 element

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low

G9204-512D

Abstract: G9203-256D
Contextual Info: NEW IMAGE SENSOR InGaAsリニアイメージセンサ G9203-256D, G9204-512D 近赤外域用イメージセンサ 0.9~1.7 µm G9203-256D, トラ