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    252N10NS Search Results

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    252N10NS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC252N10NSFGATMA1

    MOSFET N-CH 100V 7.2A/40A TDSON
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    DigiKey () BSC252N10NSFGATMA1 Digi-Reel 12,159 1
    • 1 $1.41
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    BSC252N10NSFGATMA1 Cut Tape 12,159 1
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    BSC252N10NSFGATMA1 Reel 10,000 5,000
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    Avnet Americas BSC252N10NSFGATMA1 Reel 26 Weeks 5,000
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    Mouser Electronics BSC252N10NSFGATMA1 26,893
    • 1 $1.47
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    Newark BSC252N10NSFGATMA1 Bulk 1
    • 1 $1.38
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    Rutronik BSC252N10NSFGATMA1 Reel 20,000 5,000
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    Chip Stock BSC252N10NSFGATMA1 7,500
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    EBV Elektronik BSC252N10NSFGATMA1 5,000 27 Weeks 5,000
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    New Advantage Corporation BSC252N10NSFGATMA1 5,000 1
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    Win Source Electronics BSC252N10NSFGATMA1 6,000
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    Infineon Technologies AG BSC252N10NSFGXT

    MOSFETs N-Ch 100V 40A TDSON-8 OptiMOS 2
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    Mouser Electronics BSC252N10NSFGXT 5,247
    • 1 $1.75
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    • 100 $0.74
    • 1000 $0.53
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    Infineon Technologies AG BSC252N10NSF G

    MOSFETs N-Ch 100V 40A TDSON-8 OptiMOS 2
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    Mouser Electronics BSC252N10NSF G 1,921
    • 1 $1.75
    • 10 $1.11
    • 100 $0.74
    • 1000 $0.53
    • 10000 $0.44
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    Infineon Technologies AG BSC252N10NSFG

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    Bristol Electronics BSC252N10NSFG 172
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    252N10NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bsc25

    Abstract: 457V BSC252N10NSF JESD22 252N10NS
    Contextual Info: 252N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 25.2 mΩ ID 40 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC252N10NSF 252N10NS bsc25 457V JESD22 252N10NS PDF

    BSC25

    Abstract: 252N10NS BSC252N10NSF IEC61249-2-21 JESD22
    Contextual Info: 252N10NSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 25.2 mΩ • Optimized for dc-dc conversion ID • N-channel, normal level 40 A PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC252N10NSF IEC61249-2-21 252N10NS BSC25 252N10NS IEC61249-2-21 JESD22 PDF

    25D25

    Abstract: BSC252N10NS BSC25
    Contextual Info: 252N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 25.2 mΩ ID 40 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC252N10NSF 252N10NS 25D25 BSC252N10NS BSC25 PDF