251 3J Search Results

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^3J 0 0 3 m i 7 251 « A P X Product Specification Philips Semiconductors BUK856-800A Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a

Contextual Info: Shielded l Vertical Ten-Contact, Ten-Position Shielded Footprint Configuration Eight-Contact, Ten-Position Shielded -*.74O [18.80] MAX 0.035 [0.89] 8 I .670 [17.02] MAX 2 ,125 [3.18j+.OlO [O 1 251 t- 640 (16 261 MAX II 5 6 -7 0.065 [1.65] (2) ;- FLANGE

Contextual Info: STD12NE06L N - CHANNEL 60V - 0.09ft - 12A - TO-251/TO-252 STripFET POWER MOSFET TYP E V STD12NE06L R dss 60 V d S o Id ii < 0.1 2 Q. 12 A • . . . . TYPICAL RDS(on) = 0.09 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: STD25NE03L N - CHANNEL 30V - 0.019 f ì - 25A - TO-251/TO-252 STripFET POWER MOSFET TYP E V dss R dS oii Id STD25NE03L 30 V < 0 .0 2 5 Q. 25 A . TYPICAL RDS(on) =0.019 £2 100% AVALANCHE TESTED . LOW GATE CHARGE . APPLICATION ORIENTED CHARACTERIZATION

Contextual Info: Liím LTl 251/LT 1256 TECHNOLOGY 40M Hz V id e o Fad er a n d D C G a in C o n tro lle d Am plifier F€flTUR€S DCSCRIPTIOn • Accurate Linear Gain Control: ±1% Typ, ±3% Max ■ Constant Gain with Temperature The LT1251/LT1256 are two-input, one-output, 40MHz

16n06l

Abstract: pspice model for ttl
Contextual Info: m W HARRIS S E M I C O N D U C T O R March1994 RFD16N06LE RFD16N06LESM 16A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-251 AA TOP VIEW • 16A, 60V • rDS(ON) = 0 .0 4 7 Q • 2KV ESD Protected

LN03202P

Abstract: LN03302P LN03402P
Contextual Info: Level Meters MM Square Type Unit: mm 5.3mmX1.8mm 3JS 3 — Element Array □ T y p e No. L ig h tin g C o lo r L N 0 3 2 0 2 P .R e d L N 0 3 3 0 2 P .G re e n L N 0 3 4 0 2 P .A m b e r Absolute Maximum Ratings T a=25 'C

Contextual Info: Level Meters MM Square Type Unit: mm 5.3mmX1.8mm 3JS 3 — Element Array □ T y p e No. L ig h tin g C o lo r L N 0 3 2 0 2 P .R e d L N 0 3 3 0 2 P .G re e n L N 0 3 4 0 2 P .A m b e r Absolute Maximum Ratings T a=25 'C

Contextual Info: POWER DIVIDERS, 12 WAY- 0° FREQUENCY RANGE 2-100 10-500 100-1000 800-1500 1800-2200 3700-4200 5800-6400 7200-8500 INSERTION LOSS dB MAX 1.5 1.6 2.2 3.5 1.2 1.4 1.6 1.9 ISOLATION (dB)M IN 25 20 20 18 14 14 14 10 AMPLITUDE BALANCE (dB) MAX 0.2 0.3 0.5 0.6

ry-81

Contextual Info: ry-81 m rEHEPATOPHbIM riEHTOfl PENTODE reHepaTopHbiii neHTOfl ry-81 M npeflHa3HaneH flrm paôO Tbi b pe>KMMax aBToreHepaqnM m ycuneHMfl molh- HOCTM paflM OTeXHM H eC KHX yCTpOÜCTB. CXEMA COEflMHEHMfl 3J1EKTP0A0B C BblBOflAMM The ry-81 M pentode is used in self-excited oscilla­

Contextual Info: SIEMENS SINGLE CHANNEL I L 2 5 0 / 2 5 1 / 2 5 2 DUAL CHANNEL H . D 2 5 Q /2 5 1 / 2 5 2 Bidirectional Input Optocoupler FEATURES • Selected Current Transfer Ratios 20%, 50%, 100% Minimum • AC o r Polarity Insensitive Input • Built-In Reverse Polarity Input

Trompeter Electronics BJ 72

Abstract: 97 a8 539 Trompeter 305 AD7B Triax* trompeter adapter
Contextual Info: CONN P2 FIG ND 3L74 =175 3L375 3L75FL :J70TL :J70 IJ370 IJ70FL 3J79TL 3J79 3J379 3J79FL 3L 7 1 3J74TL 3J74 3J374 3J74FL 1A 1A IB 1A 2A 2A 2B 2A 3A 3A 3B 3A 4 5A 5A 5B 5A BJ77 Al 1 A2 1 A3 1 A4 1 A5 1 1 A6 1 A7 1 A8 1 A9 BJ 3 7 7 1 Al I A2 1 A3 1 A4 I A5 1 A6

FE10E

Abstract: 8d679 BD676 BD680 BD675 BD678 BD679 BD682 BD684
Contextual Info: BD675; 677 BD679; 681; 683 PHILIPS INTERNATIONAL 5bE D • 711005b 0042^^2 7Ö2 M P H I N T- 3J-Z ? SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684.

Contextual Info: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.

SPW-500-S

Contextual Info: 6DI30A-12CH30A M i N ' i i : Outline Drawings POWER TRANSISTOR MODULE : Features ì • 7 V —4*4 }) # 4 =t— Kl*3j0E Including Free Wheeling Dipde • hFE^ftv.' High DC Current Gain Insulated Type È * » ta ,ia I» ii »a[7 TiblrP*l*rmin»i* AMPMe. Î

JT MARKING

Abstract: T108 TC-6249 RI-27
Contextual Info: SEC Ì Ì T / \ -y • 5 7 ^ Com pound Transistor t À GN1F4N fitt ï P N P JE i; □ > ft ftïïm o ^ M T * i î : mm X i £ # C £ l*3j ^ L T ^ i t o (R i= 2 7 k û , R 2= 47 k Û ) OGA1F4N i 3 >7°'J / > 9 ]) X-fëmx-Z t t 3 ê* J il* :Ê fê (Ta = 25 °C)

ST3PA

Abstract: st3pa-d HH52P LW5-16 K15555 AC33A IEC60947-6-1 LA38-11 ST3P three phase automatic changeover switch
Contextual Info: Load-isolation Switch 1- Switch Disconnectors GL series load-isolation switch http://www.greegoo.com 1 GL-63A GL-100A GL-160A/3 GL-160A/4 GL-250A/3 GL-250A/4 GL-400A/3 GL-400A/4 GL-630A/3 GL-630A/4 GL-1000A/3 GL-1250A/3 GL-1250A/4 GL-1600A/3 GL-2500A/3 Greegoo Electric 7.2007

K740

Contextual Info: QUALIFICATION TESTING SAMTEC CORPORATION - : - I _ .:., . . ‘: ‘_ :. i. . . ‘.’ : , . ‘. ,I / . . “C L, .I - IL’;., L. This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It

Contextual Info: DESIGN UNITS' •U S J H M E METRIC nn [INCHES] - REVISION — 1-FIRST ANGLE PROJECTION REV. DESCRPTIDN DATE BY. ECN ND. 22.0 I-1A I-1 _ _ ussmann P30S-GY-01 C€ 300V 30A n . 22~10 AWG C7\AUS 500V 4mm2 Made in China NOTES: 1.Rating:UL 300V 30A

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT N/A RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - , N /A . ALL RIGHTS RESERVED. LOC DIST DF SO R E VIS IO N S P LTR C DESCRIPTION REV PER ECO —05 —0 0 3 3 0 2 DATE DWN APVD 08-05 AA DE CAVITY LETTERS MARKED PER MIL-STD-150 WITH WHITE INK

TC9122P

Abstract: tc9122 55120
Contextual Info: TC9122P j I Í B C D 7 ' ? '7 7 7 A 7 J - ? > Í' d P L L TC9 1 2 2 T n . £ K * * lif t « Jfl¿ L t 5 fl S r V T f K n r,V rx. 4 ftftC -U 0 8 * ä flfii« 7 '° «•»A-cv^t-r o C-M O S •fa L - C t t A W W î Â i S I Ô f V i i D J f t T ra a x a l&MHs

DK2708FWK

Contextual Info: DK27.FQ/W M ITEL Fast Switching Thyristor SEMICONDUCTOR Supersedes O ctober 1995 version, DS4270 - 2.2 DS4270 - 2.3 APPLICATIONS • High Power Inverters And Choppers. ■ UPS. KEY PARAMETERS 800V DRM 290A ^T RMS 5000A ^TSM dVdt 200V/(is dl/dt 500A/|is

Contextual Info: M ITEL DGT304SE Gate Turn-off Thyristor SEMICONDUCTOR Supersedes January 1997 version, DS4609 - 3.2 DS4609 - 3.3 KEY PARAMETERS 'tc m 700A V drm 1300V l„ 250A 500V/|iS dTV > di-j/dt 500A/ iS APPLICATIONS • V ariable speed A.C. m otor drive inverters (VSD -AC .

ISO220

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RD Miniaturized, Wide Temperature Range Series Smaller case sizes than RG series High CV value Wide operating temperature range of -55~+105°C Voltage range of 6.3~450V I I & & Miniaturized Item Solvent Proof W V S2 0 0 V