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MG250V2YMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A |
Datasheet
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PMCS1133B2AQDVGR
|
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Texas Instruments
|
±1300V reinforced isolation, 80ARMS, 1MHz Hall-effect current sensor with AFR and ALERT 10-SOIC -40 to 125 |
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TMCS1123B3AQDVGR
|
|
Texas Instruments
|
±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
|
|
|
PMCS1133B1AQDVGR
|
|
Texas Instruments
|
±1300V reinforced isolation, 80ARMS, 1MHz Hall-effect current sensor with AFR and ALERT 10-SOIC -40 to 125 |
|
|
|
TMCS1123B2AQDVGR
|
|
Texas Instruments
|
±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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