2500V POWER DIODE Search Results
2500V POWER DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
| MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
| MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
| MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
2500V POWER DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ESM4045DVContextual Info: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ ESM4045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT |
OCR Scan |
ESM4045DV ESM4045DV | |
ic Lb 598 d
Abstract: ESM6045DV
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OCR Scan |
6045DV ESM6045DV ic Lb 598 d ESM6045DV | |
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Contextual Info: MITSUBISHI HVIGBT MODULES CM800HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HA-50H ● IC . 800A ● VCES . 2500V |
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CM800HA-50H | |
CM1200HC-50HContextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HC-50H ● IC . 1200A ● VCES . 2500V |
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CM1200HC-50H CM1200HC-50H | |
CM800HA-50HContextual Info: MITSUBISHI HVIGBT MODULES CM800HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HA-50H ● IC . 800A ● VCES . 2500V |
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CM800HA-50H CM800HA-50H | |
CM1200HA-50HContextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HA-50H ● IC . 1200A ● VCES . 2500V |
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CM1200HA-50H CM1200HA-50H | |
CM800HA-50HContextual Info: MITSUBISHI HVIGBT MODULES CM800HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HA-50H ● IC . 800A ● VCES . 2500V |
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CM800HA-50H 18SULATED 018K/W 036K/W CM800HA-50H | |
CM1200HA-50HContextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HA-50H ● IC . 1200A ● VCES . 2500V |
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CM1200HA-50H 012K/W 024K/W CM1200HA-50H | |
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Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HA-50H ● IC . 1200A ● VCES . 2500V |
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CM1200HA-50H | |
CM400DY-50H
Abstract: 3400 transistor
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CM400DY-50H CM400DY-50H 3400 transistor | |
nf 0036 diode
Abstract: CM400DY-50H
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CM400DY-50H nf 0036 diode CM400DY-50H | |
ESM6045DV
Abstract: isotop bipolar 3845A v120t
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ESM6045DV ESM6045DV isotop bipolar 3845A v120t | |
esm3030dvContextual Info: ESM3030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE |
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ESM3030DV esm3030dv | |
ESM2012DVContextual Info: ESM2012DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE |
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ESM2012DV ESM2012DV | |
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ESM6045DV
Abstract: schematic diagram UPS 600 Power free
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ESM6045DV ESM6045DV schematic diagram UPS 600 Power free | |
NPN DARLINGTON POWER module isotop
Abstract: ESM3045DV NPN DARLINGTON POWER MODULE
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ESM3045DV NPN DARLINGTON POWER module isotop ESM3045DV NPN DARLINGTON POWER MODULE | |
esm3030dv
Abstract: transistor AC 307 MS10A
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ESM3030DV 15SGS-THOMSON esm3030dv transistor AC 307 MS10A | |
ESM5045DVContextual Info: ESM5045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE |
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ESM5045DV ESM5045DV | |
MFC40Contextual Info: MFC40 Thyristor/Diode Modules Features ! Isolated mounting base 2500V~ ! Pressure contact technology with Increased power cycling capability ! Space and weight savings Typical Applications ! AC/DC Motor drives ! Various rectifiers ! DC supply for PWM inverter |
Original |
MFC40 MFC40-12-223F3TD MFC40-14-223F3TD MFC40-16-223F3TD MFC40-18-223F3TD MFC40 | |
MDC570Contextual Info: MDC570 Diode Modules Features ! Isolated mounting base 2500V~ ! Pressure contact technology with increased power cycling capability ! Space and weight savings Typical Applications ! AC/DC Motor drives ! Various rectifiers ! DC supply for PWM inverter VRSM |
Original |
MDC570 MDC570-12-416F3 MDC570-14-416F3 MDC570-16-416F3 MDC570-18-416F3 570/1800V 416F3 MDC570 | |
MDC200Contextual Info: MDC200 Diode Modules Features ! Isolated mounting base 2500V~ ! Pressure contact technology with increased power cycling capability ! Space and weight savings Typical Applications ! AC/DC Motor drives ! Various rectifiers ! DC supply for PWM inverter VRSM |
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MDC200 MDC200-12-216F3 MDC200-14-216F3 MDC200-16-216F3 MDC200-18-216F3 216F3 MDC200 | |
esm2012dvContextual Info: ESM2012DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE |
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ESM2012DV esm2012dv | |
ESM4045DV
Abstract: 0322AG
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ESM4045DV ESM4045DV 0322AG | |
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Contextual Info: ESM3045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE |
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ESM3045DV | |