250 WATT 28 V Search Results

250 watt

Abstract: CX 1213
Contextual Info: Roj Product Index RO ASSOCIATES DC-D C C O N V E R T E R S Page # 250 Watt, 28 VDC Input Series p V28 4-5 250 Watt, 48 VDC Input Series n V48 6-7 250 Watt, 300 VDC Input Series n V300 8-9 100 Watt, NanoVerter Series 15 50 Watt, PicoVerter™ Series 15 6 Watt PC Mount Series CX

TL107 linear

Abstract: TRANSISTOR tl131
Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805

Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET specifically designed for use in Doherty cellular power amplifier applications in the 1805

BENDIX bnc

Abstract: VHF transmitter circuit x-band isolators scm connector PA15
Contextual Info: Technical Bulletin Power Amplifiers SCM Products FEATURES • Available for VHF through X-Band • 5 Watts to 250 Watts Output • Telemetry or Video Applications • Narrow and Wideband Models • Available for 12 and 28 Vdc and 115/230 Vac Operation Typical 20 Watt Housing

Contextual Info: PTFB192557SH Thermally-Enhanced High Power RF LDMOS FET 255 W, 28 V, 1930 – 1990 MHz Description The PTFB192557SH is a 250-watt LDMOS FET designed specifically for use in Doherty cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Input and output matching has been

Contextual Info: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 41 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 250 mA, Vg = -3 V Typical

GaN 100 watt

Contextual Info: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 41 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 250 mA, Vg = -3 V Typical

microverter

Abstract: uv300-28 uV28-T515 microverter d uV300-15 uV28-12 uV300-12 uV300-24 uV300-T512 uV28-5
Contextual Info: M I C R O V E R T E R RO MICROVERTER World’s Most Advanced Ultra High Density Single and Triple Output DC-DC Converters ® DC-DC Converters, 200-250 Watt Family Evaluation Boards and Triple Output Modules Available Up to 252 Watts 28, 48, and 300 VDC Input

22811

Abstract: HR150 HR151-2812 HR151-2815 B444 B-446 B446
Contextual Info: FEATURES HR150 SERIES 20 WATT DC/DC CONVERTERS 12 & 28 VOLT INPUT • –40°C to +85°C operation • 10 to 16 VDC input or 18 to 36 VDC input • Fully Isolated • Optocoupler feedback • Fixed frequency, 125 kHz typical single and dual outputs 250 kHz typical triple outputs

elpac mi2815

Abstract: MI2815-760 MI2612-760 MI2818-760 MI2824-760 ELPAC
Contextual Info: MI Series 15-28 Watt AC Adapters 5.0 [127.0 mm] 3.0 [76.2 mm] 1.30 [33.0 mm] Electrical Specifications Input Voltage………………………95-250 VAC 90-264 Frequency……………………47-63 Hz Current. .……………1.0 Amp @ 115V

TGF2023-02

Abstract: EAR99
Contextual Info: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat 55% Maximum PAE 9.4 dB Nominal Power Gain Bias: Vd = 28 - 35 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC

dc dc converter 4953

Abstract: Interpoint
Contextual Info: DC/DC Converters 12 & 28 Volt Input mto Series 15 Watt NOT RECOMMENDED FOR NEW DESIGNS Features • –55°C to +85° C operation models VDC Output • 9 to 16 or 16 to 36 VDC input • Fully isolated triple +5 & ±12 +5 & ±15 • Opto-coupler feedback • Fixed frequency, 250 kHz typical

Contextual Info: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC

Contextual Info: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC

Contextual Info: FEATURES • • • * • • • • • –55° to +100°C operation 16 to 40 VDC input Two to eight outputs Fully Isolated 50 V for up to 50 ms transient protection Inhibit function Sync function available on select modules Sense available on select single output modules

Contextual Info: FEATURES • • • * • • • • • –55° to +100°C operation 16 to 40 VDC input Two to eight outputs Fully Isolated 50 V for up to 50 ms transient protection Inhibit function Sync function available on select modules Sense available on select single output modules

Contextual Info: FEATURES • EMI input filter meets MIL-STD-461C, CE03 • Output filter reduces ripple • –55° to +100°C operation • 17 to 40 VDC input, typical • Fully Isolated • 50 V for up to 50 ms transient protection • Inhibit function • Sync function available on

Contextual Info: FEATURES • EMI input filter meets MIL-STD-461C, CE03 • Output filter reduces ripple • –55° to +100°C operation • 17 to 40 VDC input, typical • Fully Isolated • 50 V for up to 50 ms transient protection • Inhibit function • Sync function available on

Contextual Info: HMC994 v00.0611 Amplifiers - Linear & Power - Chip 3 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 32 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT

galvanized iron thermal conductivity

Abstract: ral 7035 paint GE circuit breaker 1 pole C2 type cl mcb trip standard BUSBAR calculation free IEC -320 C19 terminal RAL7024 885032 IEC 60439-1 enclosure BUSBAR calculation
Contextual Info: GE Consumer & Industrial Power Protection New QuiXtra 630 Low Voltage distribution boards up to 630A GE imagination at work QuiXtra™630 Introduction A.2 Advantages A.4 Applications A.5 Product description A.7 Features and benefits A.8 Kit structure A.10

GHz20

Contextual Info: HMC994 v02.1011 Amplifiers - Linear & Power - Chip 3 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT

Contextual Info: HMC994 v02.1011 AMPLIFIERS - LINEAR & POWER - CHIP GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT

Contextual Info: HMC994 v02.1011 AMPLIFIERS - LINEAR & POWER - CHIP GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT

Contextual Info: HMC994 v03.1013 AMPLIFIERS - LINEAR & POWER - CHIP GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT