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25-B200-02
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NTE Electronics
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TERMINAL BLOCK BARRIER |
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PDF
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17.96MB |
5 |
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25-B200-04
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
5 |
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25-B200-06
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
5 |
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25-B200-08
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
5 |
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25-B200-10
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
5 |
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25-B200-12
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
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25B20T
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International Rectifier
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Misc. Data Book Scans 1975/76 |
Scan |
PDF
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31.56KB |
1 |
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25B20T
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Unknown
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Catalog Scans - Shortform Datasheet |
Scan |
PDF
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58.45KB |
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GD25B256E
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GigaDevice Semiconductor (Beijing) Inc
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256M-bit, Serial Peripheral Interface (SPI), Dual/Quad SPI, Dual I/O 266Mbit/s, Quad I/O 532Mbit/s. |
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PDF
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GD25B256D
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GigaDevice Semiconductor (Beijing) Inc
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256M-bit, SPI, Dual/Quad SPI, Dual I/O 208Mbits/s, Quad I/O & Quad output 416Mbits/s. |
Original |
PDF
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AC-3225B-220U0
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JWD
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AC-3225B-U0 Series common mode choke suppresses common mode noise in high-speed differential signal lines, supports CAN-FD, CAN-Bus, A2B, and LVDS, with high common mode impedance at 10MHz, rated voltage up to 80V, and operating temperature from -55°C to +150°C. |
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AC-3225B-201U4
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JWD
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Automotive Ethernet 100Base-T1 common mode choke with operating temperature from -40°C to +125°C, meeting IEEE802.3bp, OA TC12 v2.0, and AEC-Q200 requirements, suitable for suppression of common mode noise without signal attenuation. |
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SZ25B2
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SUNMATE electronic Co., LTD
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Surface mount silicon Zener diode in SMA package with power dissipation of 1.3W, voltage range from 2.7 to 200V, and junction temperature range from -65 to +200°C.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, with low leakage current and high reliability for general-purpose voltage regulation applications.Surface mount silicon Zener diode in SMA package with power dissipation of 1.3W, voltage range from 2.7 to 200V, and junction temperature range from -65 to +200°C.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, junction temperature -65 to +200°C, low leakage current, high reliability, and high peak reverse power dissipation capability.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, low leakage current, high reliability, junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, with low leakage current and high reliability, suitable for voltage regulation applications.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, junction temperature -65 to +200°C, low leakage current, high reliability, and high peak reverse power dissipation capability. |
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PDF
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GD25B257D
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GigaDevice Semiconductor (Beijing) Inc
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256M-bit, SPI, Dual I/O 208Mbits/s, Quad I/O & Quad output 416Mbits/s, DTR Quad I/O 640Mbits/s. |
Original |
PDF
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SMZ25B2
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SUNMATE electronic Co., LTD
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Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SOD-123FL package with power dissipation of 1.3W, voltage range 3.0 to 200V, low leakage current, and zener impedance from 4 to 1900 ohms depending on型号.Surface mount silicon Zener diode SMZ253A-SMZ25D0 with 3.0 to 200V voltage range, 1.3W power dissipation, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode SMZ253A-SMZ25D0 with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SOD-123FL package with power dissipation of 1.3W, voltage range 3.0 to 200V, low leakage current, and zener impedance from 7 to 1900 ohms depending on type.Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, and low leakage current, suitable for high reliability applications requiring stable zener voltage and high peak reverse power handling.Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and zener impedance from 4 to 1900 ohms depending on type.Surface mount silicon Zener diode in SOD-123FL package with a zener voltage range of 3.0 to 200 V, 1.3 W power dissipation, low leakage current, and operating junction temperature from -65 to +200 °C. |
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GD25B256E
